Abstract: A near-field communication device operates to transmit data by near-field communications techniques to another device. The near-field communication device includes a memory that stores a message to be transmitted in an ASCII format. The message is retrieved from the memory and transmitted using the near-field communications techniques in an ASCII format.

Abstract: A near-field communication device operates to transmit data by near-field communications techniques to another device. The near-field communication device includes a memory that stores a message to be transmitted in an ASCII format. The message is retrieved from the memory and transmitted using the near-field communications techniques in an ASCII format.

Abstract: A near-field communication device operates to transmit data by near-field communications techniques to another device. The near-field communication device includes a memory that stores a message to be transmitted in an ASCII format. The message is retrieved from the memory and transmitted using the near-field communications techniques in an ASCII format.

Abstract: A near-field communication device operates to transmit data by near-field communications techniques to another device. The near-field communication device includes a memory that stores a message to be transmitted in an ASCII format. The message is retrieved from the memory and transmitted using the near-field communications techniques in an ASCII format.

Abstract: A near-field communication device operates to transmit data by near-field communications techniques to another device. The near-field communication device includes a memory that stores a message to be transmitted in an ASCII format. The message is retrieved from the memory and transmitted using the near-field communications techniques in an ASCII format.

Abstract: An object stores a signature associated therewith. An authentication method includes generating in the object at least one piece of personalized information of the object based on the stored signature and on at least one indication associated with the object, and communicating without contact by a device to the object during the authentication. The method also includes contactless communications to the device of the at least one piece of personalized information, determining by the device the signature based on at least the one piece of personalized information and on the at least one indication, and verifying the signature by the device.

Abstract: An integrated circuit, including: a semiconductor substrate of a first conductivity type; a plurality of regions of the first conductivity type vertically extending from the surface of the substrate, each of the regions being laterally delimited all along its periphery by a region of the second conductivity type; and a device for detecting a variation of the substrate resistance between each region of the first conductivity type and an area for biasing the substrate to a reference voltage.

Abstract: An integrated circuit includes a substrate and a circuit component (such as a MOS device or resistance) disposed at least partially within an active region of the substrate limited by an insulating region. A capacitive structure including a first electrode (for connection to a first potential such as ground) and a second electrode (for connection to a second potential such as a supply voltage) is provided in connection with the insulating region. One of the first and second electrodes is situated at least in part within the insulating region. The capacitive structure is thus configured in order to allow a reduction in compressive stresses within the active region.

Abstract: An integrated circuit, including: a semiconductor substrate of a first conductivity type; a plurality of regions of the first conductivity type vertically extending from the surface of the substrate, each of the regions being laterally delimited all along its periphery by a region of the second conductivity type; and a device for detecting a variation of the substrate resistance between each region of the first conductivity type and an area for biasing the substrate to a reference voltage.

Abstract: An integrated circuit, including: a semiconductor substrate of a first conductivity type; a plurality of regions of the first conductivity type vertically extending from the surface of the substrate, each of the regions being laterally delimited all along its periphery by a region of the second conductivity type; and a device for detecting a variation of the substrate resistance between each region of the first conductivity type and an area for biasing the substrate to a reference voltage.

Abstract: A method for protecting at least first data of a non-volatile memory from which the extraction of this first data is triggered by the reading or the writing, by a processor from or into the memory, of second data independent from the first data, said first data being provided to a circuit which the processor cannot access.

Abstract: An integrated circuit, including: a semiconductor substrate of a first conductivity type; a plurality of regions of the first conductivity type vertically extending from the surface of the substrate, each of the regions being laterally delimited all along its periphery by a region of the second conductivity type; and a device for detecting a variation of the substrate resistance between each region of the first conductivity type and an area for biasing the substrate to a reference voltage.

Abstract: A method and a device for monitoring a digital signal, wherein a first P-channel MOS transistor is placed in degradation conditions of negative bias temperature instability type during periods when the signal to be monitored is in a first state; a first quantity representative of the saturation current of the first transistor is measured when the signal to be monitored switches to a second state; and a detection signal is switched when this first quantity exceeds a threshold.

Abstract: A method for scrambling current consumption of an integrated circuit, at least during execution of a confidential operation by the integrated circuit that includes reading confidential data stored therein and/or the calculation of an encryption code is provided. The charge pump is activated to generate current consumption fluctuations on the electrical power supply line of the integrated circuit, at an intensity great enough to mask the current consumption variations associated with the execution of the confidential operation.

Abstract: A method and a circuit for detecting a binary state supported by an analog symbol, comprising sampling the symbol with a sampling signal based on a frequency having a period shorter than the duration of a symbol, selecting a number of significant samples smaller than the number of samples which would be obtained with a sampling of the symbol at said frequency, and deciding of the symbol state based on the selected samples.

Abstract: A method for protecting at least first data of a non-volatile memory from which the extraction of this first data is triggered by the reading or the writing, by a processor from or into the memory, of second data independent from the first data, said first data being provided to a circuit which the processor cannot access.

Abstract: A memory is secured against an error injection during the reading of a datum. The memory includes: means for reading a reference datum in the memory during a phase of reading a datum stored in the memory; means for comparing the reference datum read with an expected value; and means for generating an error signal if the datum read is different from the expected value. Application is provided particularly but not exclusively to the protection of memories integrated into smart cards.

Abstract: A method and a circuit for protecting the execution of a calculation by an electronic circuit, conditioning a result of the calculation to states of bits indicative of executions of steps of access in read mode and/or in write mode to storage elements.

Abstract: A method and a device for monitoring a digital signal, wherein a first P-channel MOS transistor is placed in degradation conditions of negative bias temperature instability type during periods when the signal to be monitored is in a first state; a first quantity representative of the saturation current of the first transistor is measured when the signal to be monitored switches to a second state; and a detection signal is switched when this first quantity exceeds a threshold.

Abstract: A method for reading of the state of a non-volatile memory element, including conditioning the frequency of a first oscillatory to the state of this element, and comparing the frequency of the first oscillator with the predetermined frequency of a second oscillator, selected between two possible frequency values for the first oscillator, according to the state of the storage element.