Abstract: A semiconductor device includes a metal member (15), a first semiconductor chip (13), a second semiconductor chip (14), a first solder (24) and a second solder (25). A quantity of heat generated in the first semiconductor chip is greater than the second semiconductor chip. The second semiconductor chip is formed of a material having larger Young's modulus than the first semiconductor chip. The first semiconductor chip has a first metal layer (13a) connected to the metal member through a first solder (24) at a surface facing the metal member. The second semiconductor chip has a second metal layer (14a) connected to the metal member through a second solder (25) at a surface facing the metal member. A thickness of the second solder is greater than a maximum thickness of the first solder at least at a portion of the second solder corresponding to a part of an outer peripheral edge of the second metal layer.

Abstract: A semiconductor device includes a metal member (15), a first semiconductor chip (13), a second semiconductor chip (14), a first solder (24) and a second solder (25). A quantity of heat generated in the first semiconductor chip is greater than the second semiconductor chip. The second semiconductor chip is formed of a material having larger Young's modulus than the first semiconductor chip. The first semiconductor chip has a first metal layer (13a) connected to the metal member through a first solder (24) at a surface facing the metal member. The second semiconductor chip has a second metal layer (14a) connected to the metal member through a second solder (25) at a surface facing the metal member. A thickness of the second solder is greater than a maximum thickness of the first solder at least at a portion of the second solder corresponding to a part of an outer peripheral edge of the second metal layer.

Abstract: A semiconductor device includes a metal member, a first semiconductor chip, a second semiconductor chip, a first solder and a second solder. A quantity of heat generated in the first semiconductor chip is greater than the second semiconductor chip. The second semiconductor chip is formed of a material having larger Young's modulus than the first semiconductor chip. The first semiconductor chip has a first metal layer connected to the metal member through a first solder at a surface facing the metal member. The second semiconductor chip has a second metal layer connected to the metal member through a second solder at a surface facing the metal member. A thickness of the second solder is greater than a maximum thickness of the first solder at least at a portion of the second solder corresponding to a part of an outer peripheral edge of the second metal layer.

Abstract: A lead frame has a first sink, an island, and a control terminal. The lead frame is bent, and at a rear surface, the island is positioned closer to one surface of a resin molded body than the first sink and a passive component mounting portion of the control terminal. A passive component is mounted on the passive component mounting portion of the control terminal through a bonding material, the passive component mounting portion being a part of one surface.

Abstract: A semiconductor device includes a metal member, a first semiconductor chip, a second semiconductor chip, a first solder and a second solder. A quantity of heat generated in the first semiconductor chip is greater than the second semiconductor chip. The second semiconductor chip is formed of a material having larger Young's modulus than the first semiconductor chip. The first semiconductor chip has a first metal layer connected to the metal member through a first solder at a surface facing the metal member. The second semiconductor chip has a second metal layer connected to the metal member through a second solder at a surface facing the metal member. A thickness of the second solder is greater than a maximum thickness of the first solder at least at a portion of the second solder corresponding to a part of an outer peripheral edge of the second metal layer.

Abstract: A semiconductor device, in which a plurality of control terminals that correspond to a main terminal and the same semiconductor chip protrude from a surface of an encapsulating part, and a plurality of signal paths that include the plurality of control terminals are positioned so as to be aligned with the main terminal in a first direction. Provided in each of the plurality of signal paths are pairs of relay members having identical functions, and a first relay grouping that includes one relay member of the pair of relay and a second relay grouping that includes the other relay member of the pair are positioned neighboring each other aligned in the first direction, with the ordering of the first relay grouping being mirror-inverted relative to the second relay grouping.

Abstract: A lead frame has a first sink, an island, and a control terminal The lead frame is bent, and at a rear surface, the island is positioned closer to one surface of a resin molded body than the first sink and a passive component mounting portion of the control terminal. A passive component is mounted on the passive component mounting portion of the control terminal through a bonding material, the passive component mounting portion being a part of one surface.