Patents by Inventor Syuichi Takahashi
Syuichi Takahashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11430636Abstract: Disclosed is a plasma processing apparatus including: a processing container; a susceptor configured to serve as a lower electrode and mount a processing target substrate thereon; a shower head provided above the susceptor to supply a processing gas into the processing container; an upper electrode provided above the placing table; a high frequency power supply configured to apply a high frequency power to the susceptor to generate plasma of the processing gas within the processing container; and a DC voltage application unit configured to apply a DC voltage to the upper electrode. The shower head includes a UEL base, and a CEL provided on the UEL base at susceptor side, and an insulating portion provided between the UEL base and the CEL. The DC power supply applies the DC voltage to the CEL.Type: GrantFiled: December 2, 2019Date of Patent: August 30, 2022Assignee: TOKYO ELECTRON LIMITEDInventor: Syuichi Takahashi
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Publication number: 20200105505Abstract: Disclosed is a plasma processing apparatus including: a processing container; a susceptor configured to serve as a lower electrode and mount a processing target substrate thereon; a shower head provided above the susceptor to supply a processing gas into the processing container; an upper electrode provided above the placing table; a high frequency power supply configured to apply a high frequency power to the susceptor to generate plasma of the processing gas within the processing container; and a DC voltage application unit configured to apply a DC voltage to the upper electrode. The shower head includes a UEL base, and a CEL provided on the UEL base at susceptor side, and an insulating portion provided between the UEL base and the CEL. The DC power supply applies the DC voltage to the CEL.Type: ApplicationFiled: December 2, 2019Publication date: April 2, 2020Applicant: TOKYO ELECTRON LIMITEDInventor: Syuichi TAKAHASHI
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Patent number: 10497545Abstract: Disclosed is a plasma processing apparatus including: a processing container; a susceptor configured to serve as a lower electrode and mount a processing target substrate thereon; a shower head provided above the susceptor to supply a processing gas into the processing container; an upper electrode provided above the placing table; a high frequency power supply configured to apply a high frequency power to the susceptor to generate plasma of the processing gas within the processing container; and a DC voltage application unit configured to apply a DC voltage to the upper electrode. The shower head includes a UEL base, and a CEL provided on the UEL base at susceptor side, and an insulating portion provided between the UEL base and the CEL. The DC power supply applies the DC voltage to the CEL.Type: GrantFiled: June 4, 2015Date of Patent: December 3, 2019Assignee: TOKYO ELECTRON LIMITEDInventor: Syuichi Takahashi
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Publication number: 20150357165Abstract: Disclosed is a plasma processing apparatus including: a processing container; a susceptor configured to serve as a lower electrode and mount a processing target substrate thereon; a shower head provided above the susceptor to supply a processing gas into the processing container; an upper electrode provided above the placing table; a high frequency power supply configured to apply a high frequency power to the susceptor to generate plasma of the processing gas within the processing container; and a DC voltage application unit configured to apply a DC voltage to the upper electrode. The shower head includes a UEL base, and a CEL provided on the UEL base at susceptor side, and an insulating portion provided between the UEL base and the CEL. The DC power supply applies the DC voltage to the CEL.Type: ApplicationFiled: June 4, 2015Publication date: December 10, 2015Applicant: TOKYO ELECTRON LIMITEDInventor: Syuichi TAKAHASHI
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Method and apparatus for repairing an electrostatic chuck device, and the electrostatic chuck device
Patent number: 9017786Abstract: In a repairing method for an electrostatic chuck device in which at least an adhesive layer and an attracting layer are provided on a metal base, a side surface of an eroded adhesive layer is wound with a string-like adhesive and thermal compression is performed thereafter. A repairing apparatus for an electrostatic chuck device, which is used in the repairing method, includes a rotatable table for rotating the electrostatic chuck device and a bobbin for supplying the adhesive to the adhesive layer.Type: GrantFiled: August 10, 2012Date of Patent: April 28, 2015Assignee: Tokyo Electron LimitedInventors: Ken Yoshioka, Syuichi Takahashi, Yasuharu Sasaki -
METHOD AND APPARATUS FOR REPAIRING AN ELECTROSTATIC CHUCK DEVICE, AND THE ELECTROSTATIC CHUCK DEVICE
Publication number: 20120300357Abstract: In a repairing method for an electrostatic chuck device in which at least an adhesive layer and an attracting layer are provided on a metal base, a side surface of an eroded adhesive layer is wound with a string-like adhesive and thermal compression is performed thereafter. A repairing apparatus for an electrostatic chuck device, which is used in the repairing method, includes a rotatable table for rotating the electrostatic chuck device and a bobbin for supplying the adhesive to the adhesive layer.Type: ApplicationFiled: August 10, 2012Publication date: November 29, 2012Applicant: TOKYO ELECTRON LIMITEDInventors: Ken Yoshioka, Syuichi Takahashi, Yasuharu Sasaki -
Method and apparatus for repairing an electrostatic chuck device, and the electrostatic chuck device
Patent number: 8252132Abstract: In a repairing method for an electrostatic chuck device in which at least an adhesive layer and an attracting layer are provided on a metal base, a side surface of an eroded adhesive layer is wound with a string-like adhesive and thermal compression is performed thereafter. A repairing apparatus for an electrostatic chuck device, which is used in the repairing method, includes a rotatable table for rotating the electrostatic chuck device and a bobbin for supplying the adhesive to the adhesive layer.Type: GrantFiled: January 13, 2010Date of Patent: August 28, 2012Assignee: Tokyo Electron LimitedInventors: Ken Yoshioka, Syuichi Takahashi, Yasuharu Sasaki -
Patent number: 8142609Abstract: A plasma processing apparatus including a mounting table that includes a mounting table body having a temperature adjusted to be a predetermined level, and an electrostatic chuck disposed on an upper portion of the mounting table body, joined thereto with an acrylic adhesive having a thickness of 60 ?m or more, to adsorb the substrate thereon. The apparatus further including first and second heat transfer gas diffusion regions formed at a center and a circumferential edge, respectively, of an upper surface of the electrostatic chuck, and first and second heat transfer gas supply units to supply heat transfer gas to the first and second heat transfer gas diffusion regions, respectively. A volume ratio of the second heat transfer gas diffusion region to the first heat transfer gas diffusion region is equal to or less than 0.Type: GrantFiled: March 26, 2008Date of Patent: March 27, 2012Assignee: Tokyo Electron LimitedInventors: Syuichi Takahashi, Hiroki Matsumaru, Nobutaka Nakao, Kenji Komatsu
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METHOD AND APPARATUS FOR REPAIRING AN ELECTROSTATIC CHUCK DEVICE, AND THE ELECTROSTATIC CHUCK DEVICE
Publication number: 20100177455Abstract: In a repairing method for an electrostatic chuck device in which at least an adhesive layer and an attracting layer are provided on a metal base, a side surface of an eroded adhesive layer is wound with a string-like adhesive and thermal compression is performed thereafter. A repairing apparatus for an electrostatic chuck device, which is used in the repairing method, includes a rotatable table for rotating the electrostatic chuck device and a bobbin for supplying the adhesive to the adhesive layer.Type: ApplicationFiled: January 13, 2010Publication date: July 15, 2010Applicant: TOKYO ELECTRON LIMITEDInventors: Ken Yoshioka, Syuichi Takahashi, Yasuharu Sasaki -
Publication number: 20080308230Abstract: A plasma processing apparatus 1, in which a substrate W is mounted on a mounting table 11 in a processing chamber 10 and processing gas supplied in the processing chamber 10 is made into plasma to a perform plasma treatment on the substrate W, wherein the mounting table 11 has a mounting table body 12 having a temperature adjusted to be a predetermined level, and an electrostatic chuck 13 disposed on an upper portion of the mounting table body 12 and adsorbing the substrate W thereon; a first heat transfer gas diffusion region 47 is formed at a center of an upper surface of the electrostatic chuck 13 and a second heat transfer gas diffusion region 48 is formed at a circumferential edge of the upper surface of the electrostatic chuck 13; a first heat transfer gas supply unit 51 supplying heat transfer gas to the first heat transfer gas diffusion region 47 and a second heat transfer gas supply unit 52 supplying heat transfer gas to the second heat transfer gas diffusion region 48 are included; and a volume ratiType: ApplicationFiled: March 26, 2008Publication date: December 18, 2008Applicant: TOKYO ELECTRON LIMITEDInventors: Syuichi TAKAHASHI, Hiroki Matsumaru, Nobutaka Nakao, Kenji Komatsu
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Publication number: 20080242086Abstract: A plasma processing method, for performing a plasma process on a target substrate by generating a plasma between an upper electrode and a lower electrode facing each other by means of applying a radio frequency power therebetween, includes applying a DC voltage of a positive or negative polarity to an inner electrode of an electrostatic chuck on the lower electrode to attract and hold the target substrate thereon; and changing the positive or negative polarity of the DC voltage applied to the inner electrode of the electrostatic chuck to an opposite polarity thereto between a time when the application of the radio frequency power from the radio frequency power supply is started to perform the plasma process of the target substrate and a time when the plasma process is completed.Type: ApplicationFiled: March 28, 2008Publication date: October 2, 2008Applicant: TOKYO ELECTRON LIMITEDInventors: Hiroki MATSUMARU, Nobutaka Nakao, Kenji Komatsu, Syuichi Takahashi
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Publication number: 20050274324Abstract: A parallel plate type plasma processing apparatus including a RF feed rod for applying a high frequency power to a susceptor and a temperature detection unit for detecting the temperature of a substrate on the susceptor is configured to reduce an effect that high frequency current flowing in the RF feed rod has on temperature detection of the temperature detection unit. A surface portion of the susceptor serves as a mounting unit including an electrostatic chuck and a heater. A shaft, which is a protection pipe extracted downward from the processing chamber, is provided under the mounting unit. A chuck electrode of the electrostatic chuck serves as an electrode for applying a high frequency voltage. Provided in the shaft are two RF feed rod for supplying a power to the electrode and an optical fiber, i.e., a temperature detection unit, having a dielectric fluorescent material is disposed in a leading end thereof.Type: ApplicationFiled: March 31, 2005Publication date: December 15, 2005Applicant: TOKYO ELECTRON LIMITEDInventors: Syuichi Takahashi, Yasuharu Sasaki, Tsutomu Higashiura, Tomoya Kubota
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Patent number: 6523352Abstract: Piping support of a gas turbine steam cooled combustor is improved such that even when the piping support is damaged by combustion vibration, dropping of the piping support from the piping is prevented, so as to avoid intrusion of fractions of the piping support into turbine portion. An outer fitting member is fixed to a wall surface of a tail tube by welds. A ring is pinched inside the outer fitting member to be fixed by welds. The ring having an inner diameter slightly larger than an outer diameter of steam piping is fitted around the steam piping to be fixed by welds at three places. The steam piping is fixed to the ring, the ring is fixed to the outer fitting member and the outer fitting member is fixed to the tail tube. Thus, the steam piping is supported to the tail tube and even when the welds are detached by combustion vibration, no case of the outer fitting member dropping from the steam piping occurs.Type: GrantFiled: July 24, 2000Date of Patent: February 25, 2003Assignees: Tohoku Electric Power Company, Inc., Mitsubishi Heavy Industries, Ltd.Inventors: Syuichi Takahashi, Yoshiaki Nishimura, Hiroyuki Fujita, Hiroyuki Ogasawara, Noboru Yamada, Ikuo Ando, Haruhiko Kondo, Kazunori Chiba, Yoichi Iwasaki, Masayuki Takahama, Koichiro Yanou
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Patent number: D496008Type: GrantFiled: June 12, 2003Date of Patent: September 14, 2004Assignee: Tokyo Electron LimitedInventors: Syuichi Takahashi, Yasuharu Sasaki