Patents by Inventor Syuji Mochizuki

Syuji Mochizuki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5514425
    Abstract: A thin film-forming method according to the present invention is characterized by comprising the steps of introducing TiCl.sub.4, hydrogen, nitrogen and NF.sub.3 into a film-forming chamber containing a semiconductor substrate (1) having a groove made in its surface, after the chamber has been evacuated to 10.sup.-4 Torr or less; and converting these gases into plasma, thereby forming a thin TiN film on only that portion of the groove which is other than the wall surfaces of the groove.
    Type: Grant
    Filed: March 6, 1995
    Date of Patent: May 7, 1996
    Assignees: Kabushiki Kaisha Toshiba, Tokyo Electron Limited, Tokyo Electron Yamanashi Limited
    Inventors: Hitoshi Ito, Kyoichi Suguro, Nobuo Hayasaka, Haruo Okano, Shinji Himori, Kazuya Nagaseki, Syuji Mochizuki