Patents by Inventor Syuzo Kanzaki

Syuzo Kanzaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7138183
    Abstract: An environmental barrier coating material comprising one or more constituents selected from a group consisting of hafnia; hafnia stabilized by one or more rare-earth oxides and/or silica; zirconia-containing hafnia; and zirconia-containing hafnia stabilized by one or more rare-earth oxides and/or silica, which when formed as a coating structure for covering a substrate which has a low thermal expansion coefficient, has hafnon (HfSiO4) serving as a first layer directly formed on the substrate, and hafnia with which the first layer is coated as a second layer.
    Type: Grant
    Filed: January 12, 2005
    Date of Patent: November 21, 2006
    Assignees: Central Research Institute of Electric Power Industry, National Institute of Advanced Industrial Science and Technology
    Inventors: Tooru Hisamatsu, Isao Yuri, Shunkichi Ueno, Tatsuki Ohji, Syuzo Kanzaki
  • Publication number: 20050249977
    Abstract: An environmental barrier coating material comprising one or more constituents selected from a group consisting of hafnia; hafnia stabilized by one or more rare-earth oxides and/or silica; zirconia-containing hafnia; and zirconia-containing hafnia stabilized by one or more rare-earth oxides and/or silica, which when formed as a coating structure for covering a substrate which has a low thermal expansion coefficient, has hafnon (HfSiO4) serving as a first layer directly formed on the substrate, and hafnia with which the first layer is coated as a second layer.
    Type: Application
    Filed: January 12, 2005
    Publication date: November 10, 2005
    Inventors: Tooru Hisamatsu, Isao Yuri, Shunkichi Ueno, Tatsuki Ohji, Syuzo Kanzaki
  • Patent number: 6194336
    Abstract: This invention relates to highly toughened alumina sintered bodies, and the highly toughened alumina sintered bodies are fabricated by sintering an &agr;-aluminum oxide powder which is obtained by employing an aluminum hydroxide produced by the Bayer's process as a starting material, and calcining at 900-1200° C. a mixture obtained by adding abrasion powder worn from pulverizing alumina balls or another product to the material, in an amount of 0.01-20 mass % as seed crystals for &agr;-aluminum oxide.
    Type: Grant
    Filed: June 10, 1998
    Date of Patent: February 27, 2001
    Assignee: Japan as represented by Director General of Agency of Industrial Science and Technology
    Inventors: Yu-ichi Yoshizawa, Motohiro Toriyama, Syuzo Kanzaki
  • Patent number: 5968426
    Abstract: The present invention relates to a method for producing a porous silicon nitride sintered body having high strength and low thermal conductivity, which comprises of adding more than 10 volume % of rodlike beta-silicon nitride single crystals with a larger mean diameter than that of a silicon nitride raw powder into a mixture comprising the silicon nitride raw powder and a sintering additive, preparing a formed body with rodlike beta-silicon nitride single crystals oriented parallel to the casting plane according to a forming technique such as sheet casting and extrusion forming, sintering said formed body to develop elongated silicon nitride grains from the added rodlike beta-silicon nitride single crystals as nuclei and obtain the sintered body with the elongated grains being dispersed in a complicated state.
    Type: Grant
    Filed: January 29, 1997
    Date of Patent: October 19, 1999
    Assignees: Japan as represented by Director General of Agency of Industrial Science and Technology, Fine Ceramics Research Association
    Inventors: Kiyoshi Hirao, Manuel E. Brito, Motohiro Toriyama, Syuzo Kanzaki, Hisayuki Imamura, Takene Hirai, Yasuhiro Shigegaki
  • Patent number: 5935888
    Abstract: An object of the present invention is to provide a high-porosity, high-strength porous silicon nitride having great tolerance with respect to strain and stress, and a method for producing the same, and the present invention relates to a high-porosity, high-strength porous silicon nitride having great tolerance with respect to strain and stress, characterized in that rodlike grains of silicon nitride with a minor diameter of 0.5 to 10 .mu.m and an aspect ratio of 10 to 100 are oriented in a single direction, and the rest of the structure other than the rodlike grains consists solely of pores with a porosity of 5 to 30%, and further the above-mentioned porous silicon nitride is produced by mixing rodlike particles of silicon nitride with a minor diameter of 0.5 to 10 .mu.
    Type: Grant
    Filed: April 29, 1997
    Date of Patent: August 10, 1999
    Assignees: Japan as represented by Director General of Agency of Industrial Science and Technology, Fine Ceramics Research Association
    Inventors: Motohiro Toriyama, Kiyoshi Hirao, Manuel E. Brito, Syuzo Kanzaki, Yasuhiro Shigegaki
  • Patent number: 5902542
    Abstract: The present invention provides silicon nitride ceramics having high thermal conductivity and a method for production thereof. This invention relates to a method for producing a silicon nitride sintered body having a microstructure with silicon nitride crystals oriented uniaxially and exhibiting high thermal conductivity of 100 to 150 W/mK in the direction parallel to the orientation direction of the crystals, which comprises of preparing a slurry by mixing a mixed powder of a sintering auxiliary, beta-silicon nitride single crystals as seed crystals and a silicon nitride raw powder with a dispersing medium, forming the slurry by tape casting or extrusion forming, calcining the formed silicon nitride body with beta-silicon nitride single crystals oriented parallel to the casting plane to remove the organic components, densifying it by hot pressing and the like if required, and further annealing it at 1700 to 2000.degree. C. under the nitrogen pressure of 1 to 100 atmospheres.
    Type: Grant
    Filed: December 13, 1996
    Date of Patent: May 11, 1999
    Assignees: Japan as represented by Director General of Agency of Industrial Science and Technology, Fine Ceramics Research Association
    Inventors: Kiyoshi Hirao, Koji Watari, Motohiro Toriyama, Syuzo Kanzaki, Masaaki Obata
  • Patent number: 5866245
    Abstract: The present invention relates to a silicon nitride sintered body having a remarkably increased strain-to-fracture, a low elasticity and high strength, characterized by consisting of a layered structure of alternating porous silicon nitride layers 1 to 1000 .mu.m thick with a porosity of 5 to 70 volume % and dense silicon nitride layers 1 to 1000 .mu.m thick with a porosity of less than 5 volume %, being layered as materials with optional tiers. In addition, this invention relates to a method for producing the silicon nitride sintered body as described above, which comprises of forming dense layers and porous layers by sheet casting or extrusion forming so as to prepare the layers to be capable of 1 to 1000 .mu.m thick after sintering, stacking them to obtain layered materials with optional tiers and sintering them at 1600.degree. to 2100 .degree. C. under a nitrogen atmosphere.
    Type: Grant
    Filed: December 23, 1996
    Date of Patent: February 2, 1999
    Assignees: Japan as represented by Director General of Agency of Industrial Science and Technology, Fine Ceramics Research Association
    Inventors: Motohiro Toriyama, Kiyoshi Hirao, Manuel E. Brito, Syuzo Kanzaki, Yasuhiro Shigegaki
  • Patent number: 5837633
    Abstract: The present invention provides a method for producing an aluminum nitride sintered body having excellent characteristics and an aluminum nitride powder conveniently and inexpensively. The present invention relates to a method for production of an aluminum nitride sintered body comprising forming a metal aluminum power into a thin-plate like shape, heating the formed body to a temperature not exceeding the melting point of aluminum in a vacuum atmosphere, and then sintering it under N.sub.2 pressure (1-150 kg/cm.sup.2), and a method for production of an aluminum nitride powder comprising heating a metal aluminum powder to a temperature not exceeding the melting point of aluminum in a vacuum atmosphere, sintering it under N.sub.2 pressure (1-150 kg/cm.sup.2, and further cooling and pulverizing it.
    Type: Grant
    Filed: October 29, 1996
    Date of Patent: November 17, 1998
    Assignees: Agency of Industrial Science and Technology, Fine Ceramics Research Association
    Inventors: Motohiro Toriyama, Kiyoshi Hirao, Masayoshi Ohashi, Syuzo Kanzaki, Masaaki Obata