Abstract: An electrochemical ethylene sensor and method for ethylene sensing are disclosed. In one aspect, an electrochemical ethylene sensor includes a working electrode and a counter electrode on an electrically insulating substrate. An ionic liquid layer covers the working electrode and counter electrode. In one method, a voltage is applied to the working electrode which is equal to or lower than the voltage required for the onset of oxidation of the material of the working electrode, for example, in the range spanning 700 mV before the onset of oxidation of the material of the working electrode.

Abstract: The disclosed technology generally relates to a sensor and methods for making and using the same, and more particularly relates to a sensor configured to sense the presence of at least one fluidum. In one aspect, a sensor for sensing a fluidum in a space adjoining the sensor comprises a two-dimensional electron gas (2DEG) layer stack. The sensor additionally comprises a gate lying adjacent to at least part of the 2DEG layer stack and configured to electrostatically control the electron density of a two-dimensional electron gas (2DEG) in the 2DEG layer stack. The sensor further comprises a source electrode contacting the 2DEG layer stack for electrically contacting the 2DEG.

Abstract: The application describes methods and apparatus for chemical sensing, e.g. gas sensing, which have high sensitivity but low power operation. A sensor is described having a flexible membrane comprising a III/N heterojunction structure configured so as to form a two dimensional electron gas within said structure. A sensing material is disposed on at least part of the flexible membrane, the sensing material being sensitive to one or more target chemicals so as to undergo a change in physical properties in the presence of said one or more target chemicals. The sensing material is coupled to said heterojunction structure such that said change in physical properties of the sensing material imparts a change in stress within the heterojunction structure which modulates the resistivity of the two dimensional electron gas.

Abstract: A Sensor for sensing the presence of at least one fluidum in a space adjoining the sensor is disclosed. In one aspect, the sensor has a two-dimensional electron gas (2DEG) layer stack, a gate electrode overlaying at least part of the 2DEG layer stack for electrostatically controlling electron density of a 2DEG in the 2DEG layer stack and a source and a drain electrode contacting the 2DEG layer stack for electrically contacting the 2DEG, wherein a detection opening is provided in between the gate electrode and the 2DEG layer stack and wherein the detection opening communicates with the space through a detection opening inlet such that molecules of the fluidum can move from the adjoining space through the detection opening inlet into the detection opening where they can measurably alter a electric characteristic of the 2DEG.

Abstract: A configuration is disclosed. In one aspect, the configuration includes a substantially planar electrode layer, in a first plane. The configuration further includes a substantially planar two-dimensional electron gas (2DEG) layer electrically connected in series with the electrode layer. The 2DEG layer is provided in a second plane substantially parallel with the first plane and located at a predetermined distance, in a direction orthogonal to the first plane, from the first plane. The 2DEG layer and the electrode layer are patterned such that the electrode layer overlays a part of the 2DEG layer, wherein the predetermined distance between the first plane and the second plane is selected to be sufficiently small for allowing electrostatic interaction between the electrode layer and the 2DEG layer.

Abstract: The disclosed technology generally relates to a sensor and methods for making and using the same, and more particularly relates to a sensor configured to sense the presence of at least one fluidum. In one aspect, a sensor for sensing a fluidum in a space adjoining the sensor comprises a two-dimensional electron gas (2DEG) layer stack. The sensor additionally comprises a gate lying adjacent to at least part of the 2DEG layer stack and configured to electrostatically control the electron density of a two-dimensional electron gas (2DEG) in the 2DEG layer stack. The sensor further comprises a source electrode contacting the 2DEG layer stack for electrically contacting the 2DEG.

Abstract: Methods and sensors for detecting the presence and/or concentration of an analyte are disclosed. In one aspect, a sensing element for use in a sensor is disclosed. The sensing element comprises a resonant cavity device configured to emit optical radiation at an initial power level, a sensing layer exhibiting an initial refractive index, and a detector. The sensing layer is configured to absorb or adsorb an analyte and, in response to absorbing or adsorbing the analyte, exhibit a modified refractive index that differs from the initial refractive index. The resonant cavity device is further configured to, in response to the sensing layer absorbing or adsorbing the analyte, emit optical radiation at a modified power level based on the modified refractive index. The detector is configured to detect the modified power level.

Abstract: A Sensor for sensing the presence of at least one fluidum in a space adjoining the sensor is disclosed. In one aspect, the sensor has a two-dimensional electron gas (2DEG) layer stack, a gate electrode overlaying at least part of the 2DEG layer stack for electrostatically controlling electron density of a 2DEG in the 2DEG layer stack and a source and a drain electrode contacting the 2DEG layer stack for electrically contacting the 2DEG, wherein a detection opening is provided in between the gate electrode and the 2DEG layer stack and wherein the detection opening communicates with the space through a detection opening inlet such that molecules of the fluidum can move from the adjoining space through the detection opening inlet into the detection opening where they can measurably alter a electric characteristic of the 2DEG.

Abstract: A device including a gas sensor sensitive to the presence of a specific gas is disclosed. In one aspect, the gas sensor includes a first segment made of a dielectric material and a second segment made of a semiconducting material. The first segment has a first surface exposed to an environment of the gas sensor and is located between the environment and the second segment. The first segment has a first thickness and the second segment has a second thickness. The first thickness is selected such that upon diffusion of a gas molecule of the specific gas into the first segment, a dipole of the molecule of the specific gas detectably influences a bending of an energy-band structure of the semiconducting material of the second segment. The second thickness is in the order of, or smaller than, the Debye length of the semiconducting material.

Abstract: An electrochemical ethylene sensor and method for ethylene sensing are disclosed. In one aspect, an electrochemical ethylene sensor includes a working electrode and a counter electrode on an electrically insulating substrate. An ionic liquid layer covers the working electrode and counter electrode. In one method, a voltage is applied to the working electrode which is equal to or lower than the voltage required for the onset of oxidation of the material of the working electrode, for example, in the range spanning 700 mV before the onset of oxidation of the material of the working electrode.

Abstract: A configuration is disclosed. In one aspect, the configuration includes a substantially planar electrode layer, in a first plane. The configuration further includes a substantially planar two-dimensional electron gas (2DEG) layer electrically connected in series with the electrode layer. The 2DEG layer is provided in a second plane substantially parallel with the first plane and located at a predetermined distance, in a direction orthogonal to the first plane, from the first plane. The 2DEG layer and the electrode layer are patterned such that the electrode layer overlays a part of the 2DEG layer, wherein the predetermined distance between the first plane and the second plane is selected to be sufficiently small for allowing electrostatic interaction between the electrode layer and the 2DEG layer.

Abstract: A method of making an electrically conductive structure in a surface portion of a dielectric material is disclosed. In one aspect, the method includes creating vacancies at at least part of an exposed surface of the dielectric material by removing atoms from a plurality of molecules of the dielectric material.

Abstract: A humidity barrier comprises a mixed matrix membrane, wherein the mixed matrix membrane comprises a polymer matrix with at least a hydrophobic surface, in which polymer matrix porous hydrophilic filler particles are dispersed. The hydrophobic surface may be formed either by hydrophobic polymer material itself or a hydrophobic coating may be provided on top of non-hydrophobic polymer material.

Abstract: Methods and sensors for detecting the presence and/or concentration of an analyte are disclosed. In one aspect, a sensing element for use in a sensor is disclosed. The sensing element comprises a resonant cavity device configured to emit optical radiation at an initial power level, a sensing layer exhibiting an initial refractive index, and a detector. The sensing layer is configured to absorb or adsorb an analyte and, in response to absorbing or adsorbing the analyte, exhibit a modified refractive index that differs from the initial refractive index. The resonant cavity device is further configured to, in response to the sensing layer absorbing or adsorbing the analyte, emit optical radiation at a modified power level based on the modified refractive index. The detector is configured to detect the modified power level.

Abstract: The present invention relates to a method for obtaining enlarged Cu grains in small trenches. More specifically it related to a method for creating enlarged copper grains or inducing super secondary grain growth in electrochemically deposited copper in narrow trenches and/or vias to be used in semiconductor devices.