Abstract: A method for band gap tuning of metal oxide semiconductors is provided, comprising: placing a metal oxide semiconductor in a plasma chamber; (a1) treating the metal oxide semiconductor with an oxygen plasma for oxidizing the metal oxide semiconductor to decrease band gap thereof; and (a2) treating the metal oxide semiconductor with a hydrogen plasma for reducing the metal oxide semiconductor to increase band gap thereof; or (b1) treating the metal oxide semiconductor with an oxygen plasma for oxidizing the metal oxide semiconductor to increase band gap thereof; and (b2) treating the metal oxide semiconductor with a hydrogen plasma for reducing the metal oxide semiconductor to decrease band gap thereof.

Abstract: An ion implantation system and method of monitoring implant energy of an ion implantation device. The ion implantation system includes an ion implantation device and a monitoring device. The ion implantation device generates a plurality of charged particles and accelerates them with an accelerating voltage for ion implantation. The monitoring device performs spectroscopic analysis of the charged particles to obtain the real accelerating voltage. Thus, implant energy output by the ion implantation device can be calibrated.

Abstract: An ion implantation system and method of monitoring implant energy of an ion implantation device. The ion implantation system includes an ion implantation device and a monitoring device. The ion implantation device generates a plurality of charged particles and accelerates them with an accelerating voltage for ion implantation. The monitoring device performs spectroscopic analysis of the charged particles to obtain the real accelerating voltage. Thus, implant energy output by the ion implantation device can be calibrated.

Abstract: A method for detecting the end point of plasma etching process by using matrix comprises a step of detecting a beginning matrix including emitting intensities and/or other plasma parameters of at least two different plasma species during beginning etching process. Then, a step of detecting an etching matrix is performed in which the etching matrix includes emitting intensities and/or other plasma parameters of the at least two different plasma species at the etching reaction. An end point matrix is then computed by using the beginning as well as etching matrices and compared to a reference end point matrix to decide whether the end point is reached.

Abstract: A gas scrubber comprises a gas inlet pipe that provides the scrubber with gases to be processed; means for initiating reactions of decomposition that is directed to initialize the decomposition of gases; an oxygen and natural gas inlet pipes to provide the necessary gases for combustion; a chamber of decomposition into which the gases to be processed are decomposed under thermal process carried out by combustion; and means for scrubbing byproducts produced in the chamber of decomposition. The means for initiating the reactions of decomposition is directed to initialize the decomposition of gas through producing radicals thereof. Thereby, the decomposition of gases under combustion in the chamber of decomposition can be accelerated, and less thermal energy is required from the combustion.

Abstract: A method for detecting the end point of plasma etching process by using matrix comprises a step of detecting a beginning matrix including emitting intensities and/or other plasma parameters of at least two different plasma species during beginning etching process. Then, a step of detecting an etching matrix is performed in which the etching matrix includes emitting intensities and/or other plasma parameters of the at least two different plasma species at the etching reaction. An end point matrix is then computed by using the beginning as well as etching matrices and compared to a reference end point matrix to decide whether the end point is reached.

Abstract: A detecting method for the dry etching machine under the semiconductor process is introduced. A certain number of wafers are sequentially performed with a dry etching process, wherein the Vpp value of each wafer under the etching process is recorded. Next, the Vpp values are processed by a mathematical algorithm, for eliminating some unreasonable values. Then, a Vpp range under the normal operation condition is obtained, based one the prediction from the mathematical algorithm, and is sent to the control system of the dry etching machine. The Vpp value of the wafer is compared to the Vpp range. If the Vpp value is within the Vpp range then it indicates a normal operation. If the Vpp value is out of the Vpp range, then the control system of the etching machine automatically stops the machine and issues a warning signal by voice or by E-mail or pager, so as to inform the operator to adjust the fabrication parameters for dry etching machine.

Abstract: The present invention provides a method of frequency modulated end-point detection. Control signals are sent to the manufacture device for performing the manufacturing process, wherein process signals are generated along with the manufacturing process. Process signals are filtered to obtain synchronization signals synchronized with the control signals. A judging standard is provided according to the synchronization signals corresponding to a specific state of the process. The synchronization signals are continuously monitored, and a process end-point is determined when the synchronization signals do not meet the judging standard.

Abstract: This invention provides a method for accurately measuring a gap distance between two electrodes. According to the method, a plasma space is formed between the electrodes, across which a DC voltage is coupled. The plasma space has a reactive gas that emits a spectrum of spectral lines. The spectrum is monitored to determine at least one line distance between the spectral lines. Finally, the gap distance can be deduced according to the line distance and a specific rule.

Abstract: A gas scrubber comprises a gas inlet pipe that provides the scrubber with gases to be processed; means for initiating reactions of decomposition that is directed to initialize the decomposition of gases; an oxygen and natural gas inlet pipes to provide the necessary gases for combustion; a chamber of decomposition into which the gases to be processed are decomposed under thermal process carried out by combustion; and means for scrubbing byproducts produced in the chamber of decomposition. The means for initiating the reactions of decomposition is directed to initialize the decomposition of gas through producing radicals thereof. Thereby, the decomposition of gases under combustion in the chamber of decomposition can be accelerated, and less thermal energy is required from the combustion.

Abstract: The present invention provides a method and apparatus of using optical temperature measurement as an in-situ monitoring of etch rate. First of all, a plasma etching process is performed in a plasma etcher having a vacuum chamber. Then, an optical multi-channel analyzer (OMA) monitors a series of emission lines of a certain plasma species emitted from the vacuum chamber during the plasma etching process. Then, based on the intensity distribution of the emission lines detected, a computer computes and generates an optical temperature. Finally, the computer generates a relevant ER based on the optical temperature. The emission lines are emitted due to the transitions between different energy states of a certain plasma species. These transitions may be between different electronic energy states, vibrational energy states, or rotational energy states, whereas the plasma species may be any one of the reactants in the plasma chamber such as CO, CO2, CF, CF2, SiF, C2, HF, etc.

Abstract: A method of forming a field emission device for a flat panel display includes operating a projection exposure apparatus. This comprises placing three layers of exposure sensitive material on a device in succession, with steps of exposure and removal of material between deposition of subsequent layers of exposure sensitive material. Furthermore, a field emission device is formed by exposing a third layer of exposure sensitive material, wherein a tip on the field emission device or plurality of tips on the field emission devices can be obtained with differing sharpness characteristics by varying the depth and diameter of holes in a mask used during exposure of exposure sensitive material.

Abstract: A method of profile control in metal etching, wherein a metal layer is positioned on a dielectric layer comprising an aluminum-alloy layer on the dielectric and an anti-reflection layer on the aluminum-alloy layer. The method of the present invention includes a step of performing a breakthrough step of a first etch recipe to remove the anti-reflection layer and a certain thickness of the aluminum-alloy layer until a predetermined depth is reached. The method then further includes a step of performing a main etch step of a second etch recipe having a higher etch rate than the first etch recipe to remove the remaining residue of the aluminum-alloy layer. The main object of the present invention is to achieve formations of metal lines with smooth and tapered sidewalls. Thereby, the method of the present invention reduces the possibility of forming voids during the subsequent deposition process, which improves the reliability of the IC devices made.

Abstract: The present invention provides a method for forming a wavy-shaped deep trench in a substrate. The method comprises the following steps. First, the method forms a shielding layer with an aperture in the substrate. Second, the method performs a first etch step, creating a first sidewall with positive slope under the aperture. Third, the method performs a second etch step, creating a second sidewall with negative slope under the aperture. The method sequentially and periodically alternates the first etch step and the second etch step to remove a predetermined depth of the substrate and form a wavy-shaped deep trench. A benefit of the present invention is that a deep trench with a wavy sidewall can be formed by a single plasma operation.

Abstract: This invention provides a method for accurately measuring a gap distance between two electrodes. According to the method, a plasma space is formed between the electrodes, across which a DC voltage is coupled. The plasma space has a reactive gas that emits a spectrum of spectral lines. The spectrum is monitored to determine at least one line distance between the spectral lines. Finally, the gap distance can be deduced according to the line distance and a specific rule.

Abstract: The present invention provides a method of frequency modulated end-point detection. Control signals are sent to the manufacture device for performing the manufacturing process, wherein process signals are generated along with the manufacturing process. Process signals are filtered to obtain synchronization signals synchronized with the control signals. A judging standard is provided according to the synchronization signals corresponding to a specific state of the process. The synchronization signals are continuously monitored, and a process end-point is determined when the synchronization signals do not meet the judging standard.

Abstract: A method of forming a field emission device for a flat panel display includes providing a conductive silicon substrate, forming a hole on the upper surface of the substrate, covering the hole with a conductive layer of silicon to form a valley in portions of the layer of silicon above the hole, covering the silicon layer with a first oxide layer, planarizing the first oxide layer to leave oxide mainly in the valley, etching the oxide left in the valley and the layer of silicon to form a portion of the layer of silicon into a structure having a peak above the hole, forming a second oxide layer to cover the peak, planarizing the second oxide layer to leave a small amount of oxide above the peak, selectively etching the second oxide layer to form a step around the peak, forming a metal layer on portions on the second oxide layer, etching the metal layer to remove metal from above the step, forming a first silicon nitride layer on the step and remaining portions of the metal layer, selectively etching a portion o

Abstract: A method for monitoring the presence of particles in a plasma etch chamber. It includes the steps of: (a) selecting at least one laser light source whose wavelength is at such an energy which will cause the particles to be monitored inside the plasma etch chamber to emit Raman, Stoke, and anti-Stoke spectra lines when the laser light is scattered by the particle; (b) emitting the laser light into an internal space of the plasma etch chamber; and (c) using a set of fiber optics to intercept light that may be scattered by the particle, if the particle is present in the plasma etch chamber; and (d) measuring amplitude and spectra of the scattered light. Because the intensity of the scattered light is proportional to the dielectric constant to the fourth power, the method is most advantageous for detect the presence of metal-containing particles, which have a very high dielectric constant. The spectral analysis also provides information relating to the chemical composition of the particles.

Abstract: A non-intrusive method for in-situ measurement of etching chamber and optionally etch rate inside a plasma etching chamber is disclosed for use in the fabrication of semiconductor devices. The method includes the step of selecting at least one plasma species as a probe which can be F, CF.sub.2, or CO, then measuring the emission intensity at a predetermined wavelength corresponding to the plasma species so selected. Preferably, the emission intensity is measured at wavelength of 686 nm (corresponding to the transition of F from 3s.sup.3 P.sub.3 to 3p.sup.4 P.sub.3), 269 or 239 nm, corresponding to the transitions from A.sup.1 B.sub.1 (v'=0) to X.sup.1 A.sub.1 (v"=0) and from A.sup.1 B.sub.1 (v'=9) to X.sup.1 A.sub.1 (v"=0) for CF.sub.2, respectively, and 693 or 505 nm, corresponding to the transitions from d.sup.3 .PI.(v'=2) to a.sup.3 .PI.(v"=2) and from d.sup.3 .PI.(v'=7) to a.sup.3 .PI.(v"=2) for CO, respectively.