Patents by Inventor Szu-Chi Yang
Szu-Chi Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11996468Abstract: A method of fabricating a device includes providing a fin having an epitaxial layer stack with a plurality of semiconductor channel layers interposed by a plurality of dummy layers. In some embodiments, the method further includes exposing lateral surfaces of the plurality of semiconductor channel layers and the plurality of dummy layers within a source/drain region of the semiconductor device. In some examples, the method further includes etching the exposed lateral surfaces of the plurality of dummy layers to form recesses and forming an inner spacer within each of the recesses, where the inner spacer includes a sidewall profile having a convex shape. In some cases, and after forming the inner spacer, the method further includes performing a sheet trim process to tune the sidewall profile of the inner spacer such that the convex shape of the sidewall profile becomes a substantially vertical sidewall surface after the sheet trim process.Type: GrantFiled: September 2, 2021Date of Patent: May 28, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chien-Chih Lin, Hsiu-Hao Tsao, Szu-Chi Yang, Shih-Hao Lin, Yu-Jiun Peng, Chang-Jhih Syu, An Chyi Wei
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Patent number: 11949015Abstract: A method includes following steps. A semiconductor fin is formed extending from a substrate. A gate structure is formed extending across the semiconductor fin. Recesses are etched in the semiconductor fin. Source/drain epitaxial structures are formed in the recesses in the semiconductor fin. Formation of each of the source/drain epitaxial structures comprises performing a first epitaxy growth process to form a bar-shaped epitaxial structure in one of the recesses, and performing a second epitaxy growth process to form a cladding epitaxial layer cladding on the bar-shaped epitaxial structure. The bar-shaped epitaxial structure has a lower phosphorous concentration than the cladding epitaxial layer.Type: GrantFiled: August 10, 2022Date of Patent: April 2, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Szu-Chi Yang, Chih-Hsiang Huang
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Publication number: 20230395703Abstract: A semiconductor structure includes substrate, semiconductor layers, source/drain features, metal oxide layers, and a gate structure. The semiconductor layers extend in an X-direction and over the substrate. The semiconductor layers are spaced apart from each other in a Z-direction. The source/drain features are on opposite sides of the semiconductor layers in the X-direction. The metal oxide layers cover bottom surfaces of the semiconductor layers. The gate structure wraps around the semiconductor layers and the metal oxide layers. The metal oxide layers are in contact with the gate structure.Type: ApplicationFiled: August 10, 2023Publication date: December 7, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shih-Hao LIN, Chia-Hung CHOU, Chih-Hsuan CHEN, Ping-En CHENG, Hsin-Wen SU, Chien-Chih LIN, Szu-Chi YANG
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Publication number: 20230326802Abstract: The present disclosure provides methods of fabricating a semiconductor device. A method according to one embodiment includes forming, on a substrate, a first fin formed of a first semiconductor material and a second fin formed of a second semiconductor material different from the first semiconductor material, forming a semiconductor cap layer over the first fin and the second fin, and annealing the semiconductor cap layer at a first temperature while at least a portion of the semiconductor cap layer is exposed.Type: ApplicationFiled: June 5, 2023Publication date: October 12, 2023Inventors: Szu-Chi Yang, Allen Chien, Tsai-Yu Huang, Chien-Chih Lin, Po-Kai Hsiao, Shih-Hao Lin, Chien-Chih Lee, Chih Chieh Yeh, Cheng-Ting Ding, Tsung-Hung Lee
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Patent number: 11742416Abstract: A semiconductor structure includes: a semiconductor substrate; a first source/drain feature and a second source/drain feature over the semiconductor substrate; and semiconductor layers extending longitudinally in a first direction and connecting the first source/drain feature and the second source/drain feature. The semiconductor layers are spaced apart from each other in a second direction perpendicular to the first direction. The semiconductor structure further includes inner spacers each between two adjacent semiconductor layers; metal oxide layers interposing between the inner spacers and the semiconductor layers; and a gate structure wrapping around the semiconductor layers and the metal oxide layers.Type: GrantFiled: May 27, 2021Date of Patent: August 29, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Shih-Hao Lin, Chia-Hung Chou, Chih-Hsuan Chen, Ping-En Cheng, Hsin-Wen Su, Chien-Chih Lin, Szu-Chi Yang
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Patent number: 11670551Abstract: The present disclosure provides methods of fabricating a semiconductor device. A method according to one embodiment includes forming, on a substrate, a first fin formed of a first semiconductor material and a second fin formed of a second semiconductor material different from the first semiconductor material, forming a semiconductor cap layer over the first fin and the second fin, and annealing the semiconductor cap layer at a first temperature while at least a portion of the semiconductor cap layer is exposed.Type: GrantFiled: July 10, 2020Date of Patent: June 6, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Szu-Chi Yang, Allen Chien, Cheng-Ting Ding, Chien-Chih Lin, Chien-Chih Lee, Shih-Hao Lin, Tsung-Hung Lee, Chih Chieh Yeh, Po-Kai Hsiao, Tsai-Yu Huang
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Publication number: 20230122339Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate including a base and a fin structure over the base. The fin structure includes a nanostructure. The semiconductor device structure includes a gate stack over the base and wrapped around the nanostructure. The gate stack has an upper portion and a sidewall portion, the upper portion is over the nanostructure, and the sidewall portion is over a first sidewall of the nanostructure. The semiconductor device structure includes a first inner spacer and a second inner spacer over opposite sides of the sidewall portion. A sum of a first width of the first inner spacer and a second width of the second inner spacer is greater than a third width of the sidewall portion as measured along a longitudinal axis of the fin structure.Type: ApplicationFiled: January 19, 2022Publication date: April 20, 2023Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chien-Chih LIN, Yun-Ju PAN, Szu-Chi YANG, Jhih-Yang YAN, Shih-Hao LIN, Chung-Shu Wu, Te-An YU, Shih-Chiang CHEN
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Patent number: 11581226Abstract: Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary method comprises forming first and second semiconductor fins in first and second regions of a substrate, respectively; forming first and second dummy gate stacks over the first and second semiconductor fins, respectively, and forming a spacer layer over the first and the second dummy gate stacks; forming a first pattern layer with a thickness along the spacer layer in the first region; form a first source/drain (S/D) trench along the first pattern layer and epitaxially growing a first epitaxial feature therein; removing the first pattern layer to expose the spacer layer; forming a second pattern layer with a different thickness along the spacer layer in the second region; form a second S/D trench along the second pattern layer and epitaxially growing a second epitaxial feature therein; and removing the second pattern layer to expose the spacer layer.Type: GrantFiled: July 24, 2020Date of Patent: February 14, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Shih-Hao Lin, Tzu-Hsiang Hsu, Chong-De Lien, Szu-Chi Yang, Hsin-Wen Su, Chih-Hsiang Huang
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Publication number: 20220384655Abstract: A method includes following steps. A semiconductor fin is formed extending from a substrate. A gate structure is formed extending across the semiconductor fin. Recesses are etched in the semiconductor fin. Source/drain epitaxial structures are formed in the recesses in the semiconductor fin. Formation of each of the source/drain epitaxial structures comprises performing a first epitaxy growth process to form a bar-shaped epitaxial structure in one of the recesses, and performing a second epitaxy growth process to form a cladding epitaxial layer cladding on the bar-shaped epitaxial structure. The bar-shaped epitaxial structure has a lower phosphorous concentration than the cladding epitaxial layer.Type: ApplicationFiled: August 10, 2022Publication date: December 1, 2022Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Szu-Chi YANG, Chih-Hsiang HUANG
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Publication number: 20220384609Abstract: A semiconductor structure includes: a semiconductor substrate; a first source/drain feature and a second source/drain feature over the semiconductor substrate; and semiconductor layers extending longitudinally in a first direction and connecting the first source/drain feature and the second source/drain feature. The semiconductor layers are spaced apart from each other in a second direction perpendicular to the first direction. The semiconductor structure further includes inner spacers each between two adjacent semiconductor layers; metal oxide layers interposing between the inner spacers and the semiconductor layers; and a gate structure wrapping around the semiconductor layers and the metal oxide layers.Type: ApplicationFiled: May 27, 2021Publication date: December 1, 2022Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shih-Hao LIN, Chia-Hung CHOU, Chih-Hsuan CHEN, Ping-En CHENG, Hsin-Wen SU, Chien-Chih LIN, Szu-Chi YANG
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Publication number: 20220359308Abstract: Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary method comprises forming first and second semiconductor fins in first and second regions of a substrate, respectively; forming first and second dummy gate stacks over the first and second semiconductor fins, respectively, and forming a spacer layer over the first and the second dummy gate stacks; forming a first pattern layer with a thickness along the spacer layer in the first region; form a first source/drain (S/D) trench along the first pattern layer and epitaxially growing a first epitaxial feature therein; removing the first pattern layer to expose the spacer layer; forming a second pattern layer with a different thickness along the spacer layer in the second region; form a second S/D trench along the second pattern layer and epitaxially growing a second epitaxial feature therein; and removing the second pattern layer to expose the spacer layer.Type: ApplicationFiled: July 26, 2022Publication date: November 10, 2022Inventors: Shih-Hao Lin, Tzu-Hsiang Hsu, Chong-De Lien, Szu-Chi Yang, Hsin-Wen Su, Chih-Hsiang Huang
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Publication number: 20220336639Abstract: A method of fabricating a device includes providing a fin having an epitaxial layer stack with a plurality of semiconductor channel layers interposed by a plurality of dummy layers. In some embodiments, the method further includes exposing lateral surfaces of the plurality of semiconductor channel layers and the plurality of dummy layers within a source/drain region of the semiconductor device. In some examples, the method further includes etching the exposed lateral surfaces of the plurality of dummy layers to form recesses and forming an inner spacer within each of the recesses, where the inner spacer includes a sidewall profile having a convex shape. In some cases, and after forming the inner spacer, the method further includes performing a sheet trim process to tune the sidewall profile of the inner spacer such that the convex shape of the sidewall profile becomes a substantially vertical sidewall surface after the sheet trim process.Type: ApplicationFiled: September 2, 2021Publication date: October 20, 2022Inventors: Chien-Chih LIN, Hsiu-Hao TSAO, Szu-Chi YANG, Shih-Hao LIN, Yu-Jiun PENG, Chang-Jhih SYU, An Chyi WEI
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Patent number: 11437516Abstract: A semiconductor structure includes a gate structure disposed over a substrate, and a plurality of source/drain features disposed on the substrate and interposed by the gate structure. Each of the source/drain features includes a first doped source/drain region extended away from the substrate, and a second doped source/drain region disposed on top and side surfaces of the first doped source/drain region, in which a phosphorus doping concentration of the first doped source/drain region is lower than a doping concentration of the second doped source/drain region.Type: GrantFiled: December 16, 2016Date of Patent: September 6, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Szu-Chi Yang, Chih-Hsiang Huang
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Publication number: 20220123126Abstract: In an embodiment, a structure includes: a semiconductor substrate; a fin extending from the semiconductor substrate; a gate stack over the fin; an epitaxial source/drain region in the fin adjacent the gate stack; and a gate spacer disposed between the epitaxial source/drain region and the gate stack, the gate spacer including a plurality of silicon oxycarbonitride layers, each of the plurality of silicon oxycarbonitride layers having a different concentration of silicon, a different concentration of oxygen, a different concentration of carbon, and a different concentration of nitrogen.Type: ApplicationFiled: January 3, 2022Publication date: April 21, 2022Inventors: Chien-Chih Lin, Yen-Ting Chen, Wen-Kai Lin, Szu-Chi Yang, Shih-Hao Lin, Tsung-Hung Lee, Ming-Lung Cheng
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Patent number: 11217679Abstract: In an embodiment, a structure includes: a semiconductor substrate; a fin extending from the semiconductor substrate; a gate stack over the fin; an epitaxial source/drain region in the fin adjacent the gate stack; and a gate spacer disposed between the epitaxial source/drain region and the gate stack, the gate spacer including a plurality of silicon oxycarbonitride layers, each of the plurality of silicon oxycarbonitride layers having a different concentration of silicon, a different concentration of oxygen, a different concentration of carbon, and a different concentration of nitrogen.Type: GrantFiled: April 1, 2020Date of Patent: January 4, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chien-Chih Lin, Yen-Ting Chen, Wen-Kai Lin, Szu-Chi Yang, Shih-Hao Lin, Tsung-Hung Lee, Ming-Lung Cheng
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Publication number: 20210313441Abstract: In an embodiment, a structure includes: a semiconductor substrate; a fin extending from the semiconductor substrate; a gate stack over the fin; an epitaxial source/drain region in the fin adjacent the gate stack; and a gate spacer disposed between the epitaxial source/drain region and the gate stack, the gate spacer including a plurality of silicon oxycarbonitride layers, each of the plurality of silicon oxycarbonitride layers having a different concentration of silicon, a different concentration of oxygen, a different concentration of carbon, and a different concentration of nitrogen.Type: ApplicationFiled: April 1, 2020Publication date: October 7, 2021Inventors: Chien-Chih Lin, Yen-Ting Chen, Wen-Kai Lin, Szu-Chi Yang, Shih-Hao Lin, Tsung-Hung Lee, Ming-Lung Cheng
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Publication number: 20210098305Abstract: The present disclosure provides methods of fabricating a semiconductor device. A method according to one embodiment includes forming, on a substrate, a first fin formed of a first semiconductor material and a second fin formed of a second semiconductor material different from the first semiconductor material, forming a semiconductor cap layer over the first fin and the second fin, and annealing the semiconductor cap layer at a first temperature while at least a portion of the semiconductor cap layer is exposed.Type: ApplicationFiled: July 10, 2020Publication date: April 1, 2021Inventors: Szu-Chi Yang, Allen Chien, Cheng-Ting Ding, Chien-Chih Lin, Chien-Chih Lee, Shih-Hao Lin, Tsung-Hung Lee, Chih Chieh Yeh, Po-Kai Hsiao, Tsai-Yu Huang
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Publication number: 20210098311Abstract: Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary method comprises forming first and second semiconductor fins in first and second regions of a substrate, respectively; forming first and second dummy gate stacks over the first and second semiconductor fins, respectively, and forming a spacer layer over the first and the second dummy gate stacks; forming a first pattern layer with a thickness along the spacer layer in the first region; form a first source/drain (S/D) trench along the first pattern layer and epitaxially growing a first epitaxial feature therein; removing the first pattern layer to expose the spacer layer; forming a second pattern layer with a different thickness along the spacer layer in the second region; form a second S/D trench along the second pattern layer and epitaxially growing a second epitaxial feature therein; and removing the second pattern layer to expose the spacer layer.Type: ApplicationFiled: July 24, 2020Publication date: April 1, 2021Inventors: Shih-Hao Lin, Tzu-Hsiang Hsu, Chong-De Lien, Szu-Chi Yang, Hsin-Wen Su, Chih-Hsiang Huang
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Publication number: 20180151737Abstract: A semiconductor structure includes a gate structure disposed over a substrate, and a plurality of source/drain features disposed on the substrate and interposed by the gate structure. Each of the source/drain features includes a first doped source/drain region extended away from the substrate, and a second doped source/drain region disposed on top and side surfaces of the first doped source/drain region, in which a phosphorus doping concentration of the first doped source/drain region is lower than a doping concentration of the second doped source/drain region.Type: ApplicationFiled: December 16, 2016Publication date: May 31, 2018Inventors: Szu-Chi Yang, Chih-Hsiang Huang