Abstract: Systems, methods, circuits, and apparatus including computer-readable mediums for managing bit line voltage generating circuits in memory devices are provided. An example bit line voltage generating circuit is configured to provide a stable clamping voltage to at least one bit line connecting memory cells in the memory device. The bit line voltage generating circuit includes an operational amplifier configured to receive a reference voltage, a feedback voltage, and a compensation current and output an output voltage, and an output transistor configured to provide a terminal voltage as the feedback voltage and the output voltage as a target voltage that is associated with the clamping voltage.

Abstract: Systems, methods, circuits, and apparatus including computer-readable mediums for managing bit line voltage generating circuits in memory devices are provided. An example bit line voltage generating circuit is configured to provide a stable clamping voltage to at least one bit line connecting memory cells in the memory device. The bit line voltage generating circuit includes an operational amplifier configured to receive a reference voltage, a feedback voltage, and a compensation current and output an output voltage, and an output transistor configured to provide a terminal voltage as the feedback voltage and the output voltage as a target voltage that is associated with the clamping voltage.