Patents by Inventor Ta-Cheng Hsu
Ta-Cheng Hsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12001132Abstract: Fabricating a photomask includes forming a protection layer over a substrate. A plurality of multilayers of reflecting films are formed over the protection layer. A capping layer is formed over the plurality of multilayers. An absorption layer is formed over capping layer. A first photoresist layer is formed over portions of absorption layer. Portions of the first photoresist layer and absorption layer are patterned, forming first openings in absorption layer. The first openings expose portions of the capping layer. Remaining portions of first photoresist layer are removed and a second photoresist layer is formed over portions of absorption layer. The second photoresist layer covers at least the first openings. Portions of the absorption layer and capping layer and plurality of multilayer of reflecting films not covered by the second photoresist layer are patterned, forming second openings. The second openings expose portions of protection layer and second photoresist layer is removed.Type: GrantFiled: August 7, 2019Date of Patent: June 4, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Pei-Cheng Hsu, Ta-Cheng Lien, Ping-Hsun Lin, Shih-Che Wang, Hsin-Chang Lee
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Patent number: 11988953Abstract: A method includes forming a multi-layered reflective layer over a substrate; depositing a metal capping layer over the multi-layered reflective layer; depositing a first metal oxide layer over the metal capping layer; depositing a metal nitride layer over the first metal oxide layer; depositing a second metal oxide layer over the metal nitride layer; forming a plurality of features on the second metal oxide layer and the metal nitride layer.Type: GrantFiled: January 6, 2023Date of Patent: May 21, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Pei-Cheng Hsu, Ta-Cheng Lien, Hsin-Chang Lee
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Patent number: 11960201Abstract: The present disclosure describes a method of patterning a semiconductor wafer using extreme ultraviolet lithography (EUVL). The method includes receiving an EUVL mask that includes a substrate having a low temperature expansion material, a reflective multilayer over the substrate, a capping layer over the reflective multilayer, and an absorber layer over the capping layer. The method further includes patterning the absorber layer to form a trench on the EUVL mask, wherein the trench has a first width above a target width. The method further includes treating the EUVL mask with oxygen plasma to reduce the trench to a second width, wherein the second width is below the target width. The method may also include treating the EUVL mask with nitrogen plasma to protect the capping layer, wherein the treating of the EUVL mask with the nitrogen plasma expands the trench to a third width at the target width.Type: GrantFiled: May 15, 2023Date of Patent: April 16, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Pei-Cheng Hsu, Chun-Fu Yang, Ta-Cheng Lien, Hsin-Chang Lee
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Publication number: 20240085781Abstract: In a method of cleaning a photo mask, the photo mask is placed on a support such that a pattered surface faces down, and an adhesive sheet is applied to edges of a backside surface of the photo mask.Type: ApplicationFiled: November 22, 2023Publication date: March 14, 2024Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hsin-Chang LEE, Pei-Cheng HSU, Hao-Ping CHENG, Ta-Cheng LIEN
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Patent number: 11929730Abstract: An acoustic wave element includes: a substrate; a bonding structure on the substrate; a support layer on the bonding structure; a first electrode including a lower surface on the support layer; a cavity positioned between the support layer and the first electrode and exposing a lower surface of the first electrode; a piezoelectric layer on the first electrode; and a second electrode on the piezoelectric layer, wherein at least one of the first electrode and the second electrode includes a first layer and a second layer that the first layer has a first acoustic impedance and a first electrical impedance, the second layer has a second acoustic impedance and a second electrical impedance, wherein the first acoustic impedance is higher than the second acoustic impedance, and the second electrical impedance is lower than the first electrical impedance.Type: GrantFiled: February 10, 2021Date of Patent: March 12, 2024Assignee: EPISTAR CORPORATIONInventors: Ta-Cheng Hsu, Wei-Shou Chen, Chun-Yi Lin, Chung-Jen Chung, Wei-Tsuen Ye, Wei-Ching Guo
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Publication number: 20240077804Abstract: A method includes forming a test pattern and a reference pattern in an absorption layer of a photomask structure. The test pattern has a first trench and a second trench, the reference pattern has a third trench and a fourth trench, the test pattern and the reference pattern have substantially the same dimension in a top view, and the second trench is deeper than the first trench, the third trench, and the fourth trench. The method further includes emitting a light beam to the test pattern to obtain a first interference pattern reflected from the test pattern, emitting the light beam to the reference pattern to obtain a second interference pattern reflected from the reference pattern; and comparing the first interference pattern with the second interference pattern to obtain a measured complex refractive index of the absorption layer.Type: ApplicationFiled: September 1, 2022Publication date: March 7, 2024Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Ping-Hsun LIN, Chien-Cheng CHEN, Shih Ju HUANG, Pei-Cheng HSU, Ta-Cheng LIEN, Hsin-Chang LEE
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Publication number: 20220393659Abstract: An acoustic wave device includes: a substrate; a first electrode on the substrate; a piezoelectric layer on the first electrode; and a second electrode on the piezoelectric layer. A bonding interface is located between the substrate and the first electrode. The full width at half maximum (FWHM) in the X-ray diffraction pattern of the crystal plane <002> of the piezoelectric layer is between 10 arc-sec and 3600 arc-sec.Type: ApplicationFiled: June 2, 2022Publication date: December 8, 2022Inventors: TA-CHENG HSU, WEI-SHOU CHEN, CHUNG-JEN CHUNG, CHENG-TSE CHOU, TIEN-YU WANG, CHUN-YI LIN, YU-JIUN SHEN, WEI-CHING GUO
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Patent number: 11515307Abstract: A method of making a semiconductor device includes: providing a substrate; forming an insulating layer on the substrate; forming a first trench in the insulating layer; forming a first semiconductor layer in the first trench; and removing a portion of the insulating layer to expose the first semiconductor layer.Type: GrantFiled: June 4, 2020Date of Patent: November 29, 2022Assignees: National Applied Research Laboratories, EPISTAR CorporationInventors: Shih-Pang Chang, Guang-Li Luo, Szu-Hung Chen, Wen-Kuan Yeh, Jen-Inn Chyi, Meng-Yang Chen, Rong-Ren Lee, Shih-Chang Lee, Ta-Cheng Hsu
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Publication number: 20210351761Abstract: A method for forming an acoustic wave device, including steps of: forming an acoustic wave sensing part and an acoustic wave reflecting part, wherein the step of forming the acoustic wave sensing part includes: providing a first substrate, forming a sensing layer on the first substrate, forming a bottom electrode on a side of the sensing layer, and forming a filling layer on the sensing layer and the bottom electrode; and wherein the step of forming the acoustic wave reflecting part includes: providing a second substrate, forming a reflecting element on the second substrate, and forming a cover layer on the reflecting element; joining the acoustic wave sensing part and the acoustic wave reflecting part; removing the first substrate; and forming a top electrode on another side of the sensing layer, wherein the bottom electrode, the top electrode and the reflecting element are arranged correspondingly to each other.Type: ApplicationFiled: May 5, 2021Publication date: November 11, 2021Inventors: Wei-Tsuen YE, Ta-Cheng HSU, Wei-Shou CHEN, Chung-Jen CHUNG
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Publication number: 20210281237Abstract: An acoustic wave device, includes piezoelectric layer having an upper piezoelectric surface and a lower piezoelectric surface; an upper electrode formed on the upper piezoelectric surface; a lower electrode; a support layer including a non-monocrystalline insulating material; and a lower cover, wherein the lower electrode and the support layer formed between the lower cover and the lower piezoelectric surface.Type: ApplicationFiled: March 5, 2021Publication date: September 9, 2021Inventors: TA-CHENG HSU, WEI-SHOU CHEN, CHUNG-JEN CHUNG, CHIA-MIN CHANG
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Publication number: 20210257986Abstract: An acoustic wave element includes: a substrate; a bonding structure on the substrate; a support layer on the bonding structure; a first electrode including a lower surface on the support layer; a cavity positioned between the support layer and the first electrode and exposing a lower surface of the first electrode; a piezoelectric layer on the first electrode; and a second electrode on the piezoelectric layer, wherein at least one of the first electrode and the second electrode includes a first layer and a second layer that the first layer has a first acoustic impedance and a first electrical impedance, the second layer has a second acoustic impedance and a second electrical impedance, wherein the first acoustic impedance is higher than the second acoustic impedance, and the second electrical impedance is lower than the first electrical impedance.Type: ApplicationFiled: February 10, 2021Publication date: August 19, 2021Inventors: Ta-Cheng HSU, Wei-Shou CHEN, Chun-Yi LIN, Chung-Jen CHUNG, Wei-Tsuen YE, Wei-Ching GUO
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Patent number: 10886433Abstract: A light-emitting device comprises a textured substrate comprising a plurality of textured structures, wherein the textured structures and the textured substrate are both composed of sapphire; and a light-emitting stack overlaying the textured substrate, comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, wherein each of the plurality of textured structures comprises a top portion having a first top-view shape, and a bottom portion parallel to the top portion and having a second top-view shape, wherein the first top-view shape comprises a circle or an ellipse, the first top-view shape comprises a first periphery and the second top-view shape comprises a second periphery, the first periphery is enclosed by the second periphery, and various distances are between each of the first periphery and the second periphery.Type: GrantFiled: June 26, 2019Date of Patent: January 5, 2021Assignee: EPISTAR CORPORATIONInventors: Ta-Cheng Hsu, Ching-Shian Yeh, Chao-Shun Huang, Ying-Yong Su, Ya-Lan Yang, Ya-Ju Lee
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Publication number: 20200303377Abstract: A method of making a semiconductor device includes: providing a substrate; forming an insulating layer on the substrate; forming a first trench in the insulating layer; forming a first semiconductor layer in the first trench; and removing a portion of the insulating layer to expose the first semiconductor layer.Type: ApplicationFiled: June 4, 2020Publication date: September 24, 2020Inventors: Shih-Pang Chang, Guang-Li Luo, Szu-Hung Chen, Wen-Kuan Yeh, Jen-Inn Chyi, Meng-Yang Chen, Rong-Ren Lee, Shih-Chang Lee, Ta-Cheng Hsu
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Patent number: 10727231Abstract: A heterogeneously integrated semiconductor device includes a substrate comprising a first material; a recess formed within the substrate and having a bottom portion with a first width, a top portion with a second width and a middle portion with a third width larger than the first width and the second width; and a first semiconductor layer filled in the bottom portion and including a second material different from the first material.Type: GrantFiled: October 12, 2018Date of Patent: July 28, 2020Assignees: National Applied Research Laboratories, EPISTAR CorporationInventors: Shih-Pang Chang, Guang-Li Luo, Szu-Hung Chen, Wen-Kuan Yeh, Jen-Inn Chyi, Meng-Yang Chen, Rong-Ren Lee, Shih-Chang Lee, Ta-Cheng Hsu
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Publication number: 20190319170Abstract: A light-emitting device comprises a textured substrate comprising a plurality of textured structures, wherein the textured structures and the textured substrate are both composed of sapphire; and a light-emitting stack overlaying the textured substrate, comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, wherein each of the plurality of textured structures comprises a top portion having a first top-view shape, and a bottom portion parallel to the top portion and having a second top-view shape, wherein the first top-view shape comprises a circle or an ellipse, the first top-view shape comprises a first periphery and the second top-view shape comprises a second periphery, the first periphery is enclosed by the second periphery, and various distances are between each of the first periphery and the second periphery.Type: ApplicationFiled: June 26, 2019Publication date: October 17, 2019Inventors: Ta-Cheng HSU, Ching-Shian YEH, Chao-Shun HUANG, Ying-Yong SU, Ya-Lan YANG, Ya-Ju LEE
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Patent number: 10374125Abstract: A light-emitting device comprises a textured substrate comprising a plurality of textured structures, wherein the textured structures and the textured substrate are both composed of sapphire; and a light-emitting stack overlaying the textured substrate, comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, wherein each of the plurality of textured structures comprises a top portion having a first top-view shape, and a bottom portion parallel to the top portion and having a second top-view shape, wherein the first top-view shape comprises a circle or an ellipse, the first top-view shape comprises a first periphery and the second top-view shape comprises a second periphery, the first periphery is enclosed by the second periphery, and various distances are between each of the first periphery and the second periphery.Type: GrantFiled: July 30, 2018Date of Patent: August 6, 2019Assignee: EPISTAR CORPORATIONInventors: Ta-Cheng Hsu, Ching-Shian Yeh, Chao-Shun Huang, Ying-Yong Su, Ya-Lan Yang, Ya-Ju Lee
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Publication number: 20190067518Abstract: A light-emitting device comprises a textured substrate comprising a plurality of textured structures, wherein the textured structures and the textured substrate are both composed of sapphire; and a light-emitting stack overlaying the textured substrate, comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, wherein each of the plurality of textured structures comprises a top portion having a first top-view shape, and a bottom portion parallel to the top portion and having a second top-view shape, wherein the first top-view shape comprises a circle or an ellipse, the first top-view shape comprises a first periphery and the second top-view shape comprises a second periphery, the first periphery is enclosed by the second periphery, and various distances are between each of the first periphery and the second periphery.Type: ApplicationFiled: July 30, 2018Publication date: February 28, 2019Inventors: Ta-Cheng HSU, Ching-Shian YEH, Chao-Shun HUANG, Ying-Yong SU, Ya-Lan YANG, Ya-Ju LEE
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Publication number: 20190043862Abstract: A heterogeneously integrated semiconductor device includes a substrate comprising a first material; a recess formed within the substrate and having a bottom portion with a first width, a top portion with a second width and a middle portion with a third width larger than the first width and the second width; and a first semiconductor layer filled in the bottom portion and including a second material different from the first material.Type: ApplicationFiled: October 12, 2018Publication date: February 7, 2019Inventors: Shih-Pang Chang, Guang-Li Luo, Szu-Hung Chen, Wen-Kuan Yeh, Jen-Inn Chyi, Meng-Yang Chen, Rong-Ren Lee, Shih-Chang Lee, Ta-Cheng Hsu
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Patent number: 10134735Abstract: A heterogeneously integrated semiconductor devices includes a base substrate; a Ge-containing film formed on the base substrate; a PMOSFET transistor having a first fin formed on the Ge-containing film; and a NMOSFET transistor having a second fin formed on the Ge-containing film; wherein the PMOSFET transistor and the NMOSFET transistor compose a CMOS transistor, and the first fin comprises Ge-containing material and the second fin comprises a Group III-V compound.Type: GrantFiled: June 26, 2017Date of Patent: November 20, 2018Assignees: National Applied Research Laboratories, EPISTAR CorporationInventors: Shih-Pang Chang, Guang-Li Luo, Szu-Hung Chen, Wen-Kuan Yeh, Jen-Inn Chyi, Meng-Yang Chen, Rong-Ren Lee, Shih-Chang Lee, Ta-Cheng Hsu
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Patent number: 10038116Abstract: A light-emitting device comprises a textured substrate comprising a plurality of textured structures, wherein the textured structures and the textured substrate are both composed of sapphire; and a light-emitting stack overlaying the textured substrate, comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, wherein one of the plurality of textured structures comprises a top portion and a bottom portion, wherein a first distance between a first projection of the top portion on the bottom portion and the bottom portion at one side is different from a second distance between a second projection of the top portion on the bottom portion and the bottom portion at another side.Type: GrantFiled: August 30, 2017Date of Patent: July 31, 2018Assignee: EPISTAR CORPORATIONInventors: Ta-Cheng Hsu, Ching-Shian Yeh, Chao-Shun Huang, Ying-Yong Su, Ya-Lan Yang, Ya-Ju Lee