Abstract: An acute kidney injury predicting system and a method thereof are proposed. A processor reads the data to be tested, the detection data, the machine learning algorithm and the risk probability comparison table from a main memory. The processor trains the detection data according to the machine learning algorithm to generate an acute kidney injury prediction model, and inputs the data to be tested into the acute kidney injury prediction model to generate an acute kidney injury characteristic risk probability and a data sequence table. The data sequence table lists the data to be tested in sequence according to a proportion of each of the data to be tested in the acute kidney injury characteristics. The processor selects one of the medical treatment data from the risk probability comparison table according to the acute kidney injury characteristic risk probability.

Abstract: A vertical-cavity surface-emitting laser (VCSEL) has a substrate formed of GaAs. A pair of mirrors is provided wherein one of the pair of mirrors is formed on the substrate. A tunnel junction is formed between the pair of mirrors.

Abstract: A backside Vertical Cavity Surface Emitting Laser (VCSEL) has a substrate. A first mirror device is formed on the substrate. An active region is formed on the first mirror device. A second mirror device is formed on the active region. A pillar is formed by directional Inductive Coupled Plasma-Reactive Ion Etcher (ICP-RIE). The pillar exposes a portion of the first mirror device, the active region and the second mirror device. A first metal contact is formed over a top section of the pillar. A second metal contact is formed on the substrate. An opening formed in the second metal contact and aligned with the pillar.

Abstract: A backside Vertical Cavity Surface Emitting Laser (VCSEL) has a substrate. A first mirror device is formed on the substrate. An active region is formed on the first mirror device. A second mirror device is formed on the active region. A pillar is formed by directional Inductive Coupled Plasma-Reactive Ion Etcher (ICP-RIE). The pillar exposes a portion of the first mirror device, the active region and the second mirror device. A first metal contact is formed over a top section of the pillar. A second metal contact is formed on the substrate. An opening formed in the second metal contact and aligned with the pillar.

Abstract: A photodiode has a substrate. A mesa structure is formed on the substrate, wherein the mesa structure has an n region containing an n type dopant formed on the substrate, an intermediate region positioned on the n region and a p region formed on the intermediate region and containing a p type dopant. A contact is formed on a top surface of the mesa and attached to the p region. The contact is formed around an outer perimeter of the mesa. The mesa has a diameter of 30 um or less.

Abstract: A photodiode has a substrate. A mesa structure is formed on the substrate, wherein the mesa structure has an n region containing an n type dopant formed on the substrate, an intermediate region positioned on the n region and a p region formed on the intermediate region and containing a p type dopant. A contact is formed on a top surface of the mesa and attached to the p region. The contact is formed around an outer perimeter of the mesa. The mesa has a diameter of 30 um or less.

Abstract: A method of semiconductor device fabrication that enables fine-line geometry lithographic definition and small form-factor packaging comprises: forming contacts on a metal layer of the semiconductor device; applying a protective mask layer over active regions and surfaces of the contacts having rough surface morphology; planarizing a surface of the semiconductor device until the protective mask layer is removed and the surfaces of the contacts having rough surface morphology are planarized; and forming contact stacks on the surfaces of the contacts which are planarized.

Abstract: A method of forming a Tunnel Junction (TJ) Vertical Cavity Surface Emitting Laser (VCSEL) array comprises forming a first mirror device on a substrate; forming an active region on the first mirror device; forming a first portion of a second mirror device on the active region; forming a plurality of tunnel junctions on the first portion of the second mirror device; and forming a second portion of the second mirror device through an epitaxial overgrowth, the second portion of the second mirror device covering the plurality of tunnel junctions, wherein individual VCSEL elements of the TJ VCSEL array are electrically connected through the epitaxial overgrowth of the second portion of the second mirror device.

Abstract: A backside Vertical Cavity Surface Emitting Laser (VCSEL) has a substrate. A first mirror device is formed on the substrate. An active region is formed on the first mirror device. A second mirror device is formed on the active region. A pillar is formed by directional Inductive Coupled Plasma-Reactive Ion Etcher (ICP-RIE). The pillar exposes a portion of the first mirror device, the active region and the second mirror device. A first metal contact is formed over a top section of the pillar. A second metal contact is formed on the substrate. An opening formed in the second metal contact and aligned with the pillar.

Abstract: A method of semiconductor device fabrication that enables fine-line geometry lithographic definition and small form-factor packaging comprises: forming contacts on a metal layer of the semiconductor device; applying a protective mask layer over active regions and surfaces of the contacts having rough surface morphology; planarizing a surface of the semiconductor device until the protective mask layer is removed and the surfaces of the contacts having rough surface morphology are planarized; and forming contact stacks on the surfaces of the contacts which are planarized

Abstract: An opto-electronic device has a backside Vertical Cavity Surface Emitting Laser (VCSEL) device. An optical component is formed on a rear surface of the backside VCSEL device.

Abstract: A method of forming a Tunnel Junction (TJ) Vertical Cavity Surface Emitting Laser (VCSEL) array comprises forming a first mirror device on a substrate; forming an active region on the first mirror device; forming a first portion of a second mirror device on the active region; forming a plurality of tunnel junctions on the first portion of the second mirror device; and forming a second portion of the second mirror device through an epitaxial overgrowth, the second portion of the second mirror device covering the plurality of tunnel junctions, wherein individual VCSEL elements of the TJ VCSEL array are electrically connected through the epitaxial overgrowth of the second portion of the second mirror device.

Abstract: A backside Vertical Cavity Surface Emitting Laser (VCSEL) has a substrate. A first mirror device is formed on the substrate. An active region is formed on the first mirror device. A second mirror device is formed on the active region. A pillar is formed by directional Inductive Coupled Plasma-Reactive Ion Etcher (ICP-RIE). The pillar exposes a portion of the first mirror device, the active region and the second mirror device. A first metal contact is formed over a top section of the pillar. A second metal contact is formed on the substrate. An opening formed in the second metal contact and aligned with the pillar.

Abstract: A vertical-cavity surface-emitting laser (VCSEL) has a substrate formed of GaAs. A pair of mirrors is provided wherein one of the pair of mirrors is formed on the substrate. A tunnel junction is formed between the pair of mirrors.

Abstract: The invention provides a photovoltaic power converter that includes a plurality of spatially separated device segments supported by a substrate, wherein the device segments are arranged in a circular pattern wherein a first group of the device segments consisting of one or more of the device segments is centrally positioned and is surrounded by a second group of the device segments comprising at least two device segments and wherein two or more of the plurality of the device segments are connected in series for developing a voltage when radiation of selected wavelengths is incident on the device.

Abstract: The invention provides an optically powered device interface module for operating an external device, and an optically powered data link comprising the same. In one embodiment the device interface module includes an optical interface for receiving optical power and data signals, an electrical USB interface for providing USB compliant electrical data signals and a 5V electrical power signal to an external USB device, a transducer coupled to a signal processor for converting the optical power and data signals into the 5V electrical power signal and the USB-compliant electrical data signals, and a power distribution circuit for providing electrical power obtained from the optical power signal to the device interface module circuitry. The transducer may be embodied using a single photovoltaic power converter for receiving the optical power and for receiving and transmitting optical data signals.

Abstract: The invention provides a photovoltaic power converter that includes a plurality of spatially separated device segments supported by a substrate, wherein the device segments are arranged in a circular pattern wherein a first group of the device segments consisting of one or more of the device segments is centrally positioned and is surrounded by a second group of the device segments comprising at least two device segments and wherein two or more of the plurality of the device segments are connected in series for developing a voltage when radiation of selected wavelengths is incident on the device.

Abstract: The invention provides an optically powered device interface module for operating an external device, and an optically powered data link comprising the same. In one embodiment the device interface module includes an optical interface for receiving optical power and data signals, an electrical USB interface for providing USB compliant electrical data signals and a 5V electrical power signal to an external USB device, a transducer coupled to a signal processor for converting the optical power and data signals into the 5V electrical power signal and the USB-compliant electrical data signals, and a power distribution circuit for providing electrical power obtained from the optical power signal to the device interface module circuitry. The transducer may be embodied using a single photovoltaic power converter for receiving the optical power and for receiving and transmitting optical data signals.

Abstract: Embodiments of the invention are directed to a method of forming a bottom oxide in a trench structure. In one embodiment, the method includes steps of providing a semiconductor substrate and forming a trench structure in the semiconductor substrate; performing an PECVD process with TEOS as a source to deposit an oxide layer on the bottom and sidewall of the trench structure and the semiconductor substrate; and removing the oxide layer on the sidewall of the trench structure substantially completely and the oxide layer on the bottom of the trench structure partially to define the remained oxide layer as the bottom oxide layer.

Abstract: Embodiments of the invention are directed to a method of forming a bottom oxide in a trench structure. In one embodiment, the method includes steps of providing a semiconductor substrate and forming a trench structure in the semiconductor substrate; performing an PECVD process with TEOS as a source to deposit an oxide layer on the bottom and sidewall of the trench structure and the semiconductor substrate; and removing the oxide layer on the sidewall of the trench structure substantially completely and the oxide layer on the bottom of the trench structure partially to define the remained oxide layer as the bottom oxide layer.