Abstract: The invention provides a device for sputtering comprising a main magnet, two secondary magnets mounted on two sides of the main magnet symmetrically, and a shell. The two secondary magnets face to each other in ends with the same polarity in a line. The shell is cylindrical and contains the main magnet and the secondary magnets.

Abstract: The invention provides a device for sputtering comprising a main magnet, two secondary magnets mounted on two sides of the main magnet symmetrically, and a shell. The two secondary magnets face to each other in ends with the same polarity in a line. The shell is cylindrical and contains the main magnet and the secondary magnets.

Abstract: A sealed bearing assembly comprises a bellows to allow a shaft swing and move, and maintains the sealing under stringent conditions.

Abstract: A sealed bearing assembly comprises a bellows to allow a shaft swing and move, and maintains the sealing under stringent conditions.

Abstract: A manufacturing method for a thin film transistor (TFT) is provided. In the manufactured TFT, after a source structure, a drain structure and a channel structure are formed, a first photoresist layer is not removed and a second photoresist is formed on the first photoresist layer through which a semiconductor structure is formed. Further, n-type amorphous silicon, poly silicon or an organic metallic compound is used in replace of the conventional metal to form the source and drain structures so as to reduce step number of manufacturing for the TFT.

Abstract: A color filter substrate including a substrate, a black matrix, a plurality of color filter patterns and a common electrode is provided. The substrate has a plurality of pixel regions thereon. The black matrix comprises a plurality of strip patterns, wherein the strip patterns are disposed between the pixel regions to isolate the pixel regions, and each strip pattern has a side portion distant from the substrate and extending to the edge of the adjacent pixel region. Each color filter pattern is disposed in each pixel region. The common electrode is disposed over the substrate and covering the color filter patterns and the black matrix.

Abstract: A method for measuring intracranial pressure in an intracranial area filled with micro-bubbles formed by an injected contrast agent includes: (1) emitting an ultrasound signal having a bandwidth to the intracranial area, (2) receiving an echoed signal from a micro-bubble, (3) performing a spectral analysis on the echoed signal to extract a low-frequency response, which is close to a DC component, (4) calculating a resonant frequency of the micro-bubbles according to the bandwidth and strength of the low-frequency response, the bandwidth of the low-frequency response similar to the bandwidth of the ultrasound signal, (5) calculating a size of the micro-bubble according to the resonant frequency and a property of the contrast agent, and (6) calculating the intracranial pressure.

Abstract: A thin film transistor including a gate, a gate insulator layer, a doped semiconductor layer, a channel layer, a source, and a drain is provided. The gate is disposed on a substrate, and the gate insulator layer is disposed on the substrate and covers the gate. The doped semiconductor layer is disposed on the gate insulator layer above the gate. Furthermore, the channel layer is disposed on the doped semiconductor layer. The source and the drain are disposed separately on two sides of the channel layer.

Abstract: A method for fabricating a pixel structure is provided. First, a gate, a scan line, and a first terminal are formed on a substrate. A gate insulating layer is formed over the substrate to cover the gate, the scan line, and the first terminal. After defining the semiconductor layer, the gate insulating layer is patterned to exposure the first terminal. A transparent conductive layer is formed over the substrate and a patterned photoresist layer is formed on the transparent conductive layer. The transparent conductive layer is patterned using the patterned photoresist layer as a mask, so as to define a source, a drain, a data line, a pixel electrode, a second terminal, and a contact pad. Because only four photomasks are used to implement the above method for fabricating the pixel structure, the cost of manufacturing can be reduced.

Abstract: A method for fabricating a pixel structure is provided. First, a gate, a scan line, and a first terminal are formed on a substrate. A gate insulating layer is formed over the substrate to cover the gate, the scan line, and the first terminal. After defining the semiconductor layer, the gate insulating layer is patterned to exposure the first terminal. A transparent conductive layer is formed over the substrate and a patterned photoresist layer is formed on the transparent conductive layer. The transparent conductive layer is patterned using the patterned photoresist layer as a mask, so as to define a source, a drain, a data line, a pixel electrode, a second terminal, and a contact pad. Because only four photomasks are used to implement the above method for fabricating the pixel structure, the cost of manufacturing can be reduced.

Abstract: The structure of a trans-reflective liquid crystal display panel includes stacks in longitudinally and two areas in transversely, which are reflective area and transmissive area. A thin-film-transistor layer and a dielectric layer are formed on a substrate in sequential. For the transmissive area, a transparent conductive film, such as a pixel electrode, is formed. For the reflective area, a reflective film with multi-layer is formed on the dielectric layer and then the thin-film-transistor layer. After assembling, the trans-reflective liquid crystal display is complete. The materials of the reflective film with multi-layer and the dielectric layer are similar to have greater adhesion. Each layer of the reflective film with multi-layer includes two sublayers, the first reflective sublayer and the second reflective sublayer, which have the different refractive indexes. By modifying the temperature, pressure, gas flow and power of emitting in manufacturing process can make the refractive indexes of both layers.

Abstract: A method for fabricating a pixel structure is provided. First, a gate, a scan line, and a first terminal are formed on a substrate. A gate insulating layer is formed over the substrate to cover the gate, the scan line, and the first terminal. After defining the semiconductor layer, the gate insulating layer is patterned to exposure the first terminal. A transparent conductive layer is formed over the substrate and a patterned photoresist layer is formed on the transparent conductive layer. The transparent conductive layer is patterned using the patterned photoresist layer as a mask, so as to define a source, a drain, a data line, a pixel electrode, a second terminal, and a contact pad. Because only four photomasks are used to implement the above method for fabricating the pixel structure, the cost of manufacturing can be reduced.

Abstract: A manufacturing method for a thin film transistor (TFT) is provided. In the manufactured TFT, after a source structure, a drain structure and a channel structure are formed, a first photoresist layer is not removed and a second photoresist is formed on the first photoresist layer through which a semiconductor structure is formed. Further, n-type amorphous silicon, poly silicon or an organic metallic compound is used in replace of the conventional metal to form the source and drain structures so as to reduce step number of manufacturing for the TFT.

Abstract: A method for measuring intracranial pressure in an intracranial area filled with micro-bubbles formed by an injected contrast agent includes: (1) emitting an ultrasound signal having a bandwidth to the intracranial area, (2) receiving an echoed signal from a micro-bubble, (3) performing a spectral analysis on the echoed signal to extract a low-frequency response, which is close to a DC component, (4) calculating a resonant frequency of the micro-bubbles according to the bandwidth and strength of the low-frequency response, the bandwidth of the low-frequency response similar to the bandwidth of the ultrasound signal, (5) calculating a size of the micro-bubble according to the resonant frequency and a property of the contrast agent, and (6) calculating the intracranial pressure.

Abstract: A method for fabricating a pixel structure is provided. First, a gate, a scan line, and a first terminal are formed on a substrate. A gate insulating layer is formed over the substrate to cover the gate, the scan line, and the first terminal. After defining the semiconductor layer, the gate insulating layer is patterned to exposure the first terminal. A transparent conductive layer is formed over the substrate and a patterned photoresist layer is formed on the transparent conductive layer. The transparent conductive layer is patterned using the patterned photoresist layer as a mask, so as to define a source, a drain, a data line, a pixel electrode, a second terminal, and a contact pad. Because only four photomasks are used to implement the above method for fabricating the pixel structure, the cost of manufacturing can be reduced.

Abstract: A color filter substrate including a substrate, a black matrix, a plurality of color filter patterns and a common electrode is provided. The substrate has a plurality of pixel regions thereon. The black matrix comprises a plurality of strip patterns, wherein the strip patterns are disposed between the pixel regions to isolate the pixel regions, and each strip pattern has a side portion distant from the substrate and extending to the edge of the adjacent pixel region. Each color filter pattern is disposed in each pixel region. The common electrode is disposed over the substrate and covering the color filter patterns and the black matrix.

Abstract: A method of intracranial ultrasound imaging applied in detecting a cranial blood vessel having blood filled with micro-bubbles formed by an injected contrast agent and generating blood vessel images includes: (1) emitting a plurality of ultrasound signals having bandwidths to the cranial blood vessel in sequence, (2) receiving an echoed signal from a micro-bubble, (3) performing a spectral analysis on the echoed signal and extracting a low-frequency response, the bandwidth of the low-frequency response similar to the bandwidth of the ultrasound signal, and (4) calculating a location and a depth of the micro-bubble in the cranium according to the low-frequency response and generating a corresponding blood vessel image.

Abstract: A method for measuring intracranial pressure in an intracranial area filled with micro-bubbles formed by an injected contrast agent includes: (1) emitting an ultrasound signal having a bandwidth to the intracranial area, (2) receiving an echoed signal from a micro-bubble, (3) performing a spectral analysis on the echoed signal to extract a low-frequency response, which is close to a DC component, (4) calculating a resonant frequency of the micro-bubbles according to the bandwidth and strength of the low-frequency response, the bandwidth of the low-frequency response similar to the bandwidth of the ultrasound signal, (5) calculating a size of the micro-bubble according to the resonant frequency and a property of the contrast agent, and (6) calculating the intracranial pressure.

Abstract: A manufacture method of a pixel structure is provided. A gate is formed over a substrate, and a gate insulator layer is formed over the substrate covering the gate. A semiconductor layer is formed over the gate insulator layer and a metal layer is formed over the semiconductor layer. A first mask layer is formed on the metal layer, and the metal layer is patterned to form a source/drain by using the first mask layer as etching mask. Afterward, a second mask layer is formed on the first mask layer and further covers a region between the source/drain. The semiconductor layer is patterned by using the first and second mask layers as etching mask, and then the first and second mask layers are removed. A passivation layer is formed over the substrate. A pixel electrode is formed on the passivation layer. The pixel electrode is electrically connected with the drain.

Abstract: A method of manufacturing a gate, a thin film transistor and a pixel. First, a patterned mask layer is formed on a substrate. The mask layer exposes an area for forming the gate. A gate is formed on the exposed area of the substrate and then the mask layer is removed. The method produces a gate having a well-defined profile. When the method is applied to form a transistor or a pixel, coverage of a subsequently form film layer is improved and point discharge is prevented.