Abstract: A vitreous silica crucible includes: a substantially cylindrical straight body portion having an opening on a top end and extending in a vertical direction; a curved bottom portion; and a corner portion connecting the straight body portion with the bottom portion and a curvature of which is greater than that of the bottom portion, wherein an inner surface of the crucible has a concavo-convex structure in which groove-shaped valleys are interposed between ridges, and an average interval of the ridges is 5-100 ?m.

Abstract: A method for pulling silicon single crystal includes a process of placing a molded body between a susceptor's inner surface and a crucible's outer surface. The molded body is formed based on three-dimensional data of the inner surface shape of the susceptor which can hold the vitreous silica crucible and three-dimensional data of the crucible so as to make the susceptor's central axis and the crucible's central axis substantially aligned when it is placed between the susceptor's inner surface and the crucible's outer surface.

Abstract: The present invention provides a vitreous silica crucible which inhibits a deformation even when used under a high temperature condition for a long time, and a method for manufacturing the same. The vitreous silica crucible comprises: a substantially cylindrical straight body portion having an opening on the top end and extending in a vertical direction, a curved bottom portion, and a corner portion connecting the straight body portion with the bottom portion and a curvature of which is greater than that of the bottom portion, wherein, the vitreous silica crucible comprises a transparent layer on the inside and a bubble layer on the outside thereof, a compressive stress layer in which compressive stress remains in the inner surface side of the transparent layer, and a tensile stress layer in which tensile stress remains and is adjacent to the compressive stress layer at a gradual rate of change of stress.

Abstract: There is provided a silica crucible for pulling a silicon single crystal, comprising silica glass and having a two-layer structure of an outer layer and an inner layer, wherein the inner layer, in a sectional side view of the crucible, has a wavy inner surface shape having mountain parts and valley parts at least between a start position and an end position for the pulling of a silicon single crystal in a silicon melt surface, and when a distance from an upper opening end of the crucible to the start position for the pulling of the silicon single crystal is 100, only a crucible portion from the upper opening end to a position within a range of 40 to 100 is crystalline.

Abstract: Buckling of a vitreous silica crucible 12 or inward fall of a sidewall 15 is effectively suppressed. The vitreous silica crucible 12 includes the cylindrical sidewall 15 having an upward-opening rim, a mortar-shaped bottom 16 including a curve, and a round portion 17 connecting the sidewall 15 and the bottom 16. In the vitreous silica crucible 12, the per-unit area thermal resistance in the thickness direction of the sidewall 15 is higher than that of the round portion 17.

Abstract: A method for measuring a three-dimensional shape of an inner surface of a vitreous silica crucible which enables the measurement of the three-dimensional shape of the inner surface of the crucible without contaminating the inner surface of the crucible, is provided. According to the present invention, a method for measuring a three-dimensional shape of a vitreous silica crucible, including a fogging step to form a fog onto an inner surface of the vitreous silica crucible, a three-dimensional shape measuring step to measure a three-dimensional shape of the inner surface, by measuring a reflected light from the inner surface irradiated with light, is provided.

Abstract: Buckling of a vitreous silica crucible or fall of a sidewall into the crucible is effectively suppressed. Furthermore, dislocations in a silicon single crystal are suppressed to enhance the yield of the single crystal. The vitreous silica crucible is used to pull single-crystal silicon and includes the cylindrical sidewall having an upward-opening rim, a mortar-shaped bottom including a curve, and a round portion connecting the sidewall and the bottom. The round portion is provided in such a manner that the curvature of the inner surface thereof is gradually increased from the sidewall toward the bottom in a section passing through the rotation axis of the vitreous silica crucible.

Abstract: A vitreous silica crucible is manufactured by rotational molding in such a manner that the three-dimensional shape thereof matches design data to a high degree. If the degree of matching between three-dimensional shapes of simulation data obtained based on initial property parameters and measurement data falls below a predetermined level, improved property parameters are set such that the degree of matching becomes higher than or equal to the predetermined level. If the degree of matching between three-dimensional shapes of simulation data obtained based on initial manufacturing conditions and the measurement data falls below a predetermined level, improved manufacturing conditions are set such that simulation data matching design data to a degree higher than or equal to the predetermined level is obtained. As a result, the degree of matching between the three-dimensional shapes of the design data and measurement data of the vitreous silica crucible can be enhanced to the predetermined level or higher.

Abstract: A high-purity vitreous silica crucible which has high strength and is used for pulling a large-diameter single-crystal silicon ingot, includes a double laminated structure constituted by an outer layer composed of amorphous silica glass with a bubble content of 1 to 10% and a purity of 99.99% or higher and an inner layer composed of amorphous silica glass with a bubble content of 0.6% or less and a purity of 99.99% or higher, and in the portion between the upper opening end of the high-purity vitreous silica crucible and the ingot-pulling start line of a silicon melt surface in the step of pulling a single-crystal silicon ingot, a portion corresponding to 40 to 100 volume % from the upper opening end of the crucible is in a crystalline structure free from the crystallization promoter.

Abstract: The present invention provides a method for evaluating a vitreous silica crucible which can measure a three-dimensional shape of the inner surface of the crucible in a non-destructive manner.

Abstract: The disclosed is a method of manufacturing a silica glass crucible for pulling silicon single crystals. In the method, reduced pressure is imparted from the inner surface to the outer surface of a crucible-shaped molded product and the crucible-shaped molded product is arc-fused while rotating the same to form a silica glass crucible with a transparent layer on the inner surface side and a bubble layer on the outer surface side. The inner surface of the wall portion of the silica glass crucible is fused a second time by arc fusion to cause bubbles present in the transparent layer of the inner surface of the wall portion to be displaced toward the bottom portion of the inner surface of the wall portion. The inner surface of the bottom portion of the silica glass crucible is fuse a second time by arc fusion to cause bubbles present in the transparent layer of the inner surface of the bottom portion to be displaced toward the periphery of the inner surface of the bottom portion.

Abstract: Provided is a vitreous silica crucible for pulling a silicon single crystal, having an inner surface layer which is excellent in uniformity and has a low bubble content rate, and a method of manufacturing the same. Provided is a method of manufacturing a vitreous silica crucible for pulling a silicon single crystal comprising the step of forming an inner surface layer 30 made of synthetic silica powder, wherein the inner surface layer 30 comprises an inner side portion 31 of the inner surface layer 30, the inner side portion 31 made of a first synthetic silica powder; and a surface side portion 32 of the inner surface layer 30, the surface side portion made of a second synthetic silica powder having a smaller average particle size than that of the first synthetic silica powder.

Abstract: Provided are a vitreous silica crucible which enables, during pulling, crystallization promotion of the inner surface and retention of the crucible strength, and a method of manufacturing the same. The vitreous silica crucible 10 has, in at least a portion of a straight body section 10, a region between 0.3 mm and 3 mm from the crucible inner surface has an OH group concentration and an OH group concentration gradient which increase as a distance from the inner surface decreases, and decrease as a distance from the inner surface increases. The vitreous silica crucible can be manufactured by a process comprising the step of heating and melting silica powder deposited on an inner surface of a rotating mold to vitrify the silica powder, wherein vapor-containing air is introduced during or right after the melting, or the crucible is reheated, after the melting and cooling, under a vapor-containing environment.

Abstract: There is provided a silica crucible for pulling a silicon single crystal, comprising silica glass and having a two-layer structure of an outer layer and an inner layer, wherein the inner layer, in a sectional side view of the crucible, has a wavy inner surface shape having mountain parts and valley parts at least between a start position and an end position for the pulling of a silicon single crystal in a silicon melt surface, and when a distance from an upper opening end of the crucible to the start position for the pulling of the silicon single crystal is 100, only a crucible portion from the upper opening end to a position within a range of 40 to 100 is crystalline.

Abstract: The disclosed is a method of manufacturing a silica glass crucible for pulling silicon single crystals. In the method, reduced pressure is imparted from the inner surface to the outer surface of a crucible-shaped molded product and the crucible-shaped molded product is arc-fused while rotating the same to form a silica glass crucible with a transparent layer on the inner surface side and a bubble layer on the outer surface side. The inner surface of the wall portion of the silica glass crucible is fused a second time by arc fusion to cause bubbles present in the transparent layer of the inner surface of the wall portion to be displaced toward the bottom portion of the inner surface of the wall portion. The inner surface of the bottom portion of the silica glass crucible is fuse a second time by arc fusion to cause bubbles present in the transparent layer of the inner surface of the bottom portion to be displaced toward the periphery of the inner surface of the bottom portion.

Abstract: When carrying out a channel compensation of a data symbol, a channel estimation value of the reference symbol of the frame itself and that of a reference symbol of the preceding frame are used. In this event, if an AGC gain at the time of a channel estimation value by a reference symbol of the frame itself is different from that of a frame of the reference symbol of the preceding frame, and if an AGC gain of the reference symbol of the frame itself is the same as that of a data symbol to be subjected to a transmission compensation, then the channel estimation value by the reference symbol of the preceding frame is corrected so as to cancel the difference of the AGC gains, followed by using it for a channel compensation of the data symbol.

Abstract: A radio receiver includes a branching unit, a first gain-control system, a second-gain control system, and a signal processing unit. The branching unit branches a radio signal received by the radio receiver into two signals. The first-gain control system performs a gain control of a pilot signal in one of branched signals, and the second gain control system performs a gain control of a data signal in another of the branched signals. The signal processing unit synchronizes frames in the received radio signal. The signal processing unit outputs a gain signal to each of the first gain-control system and the second gain-control system. The first gain-control system and the second gain-control system perform the gain controls based on the gain signal.

Abstract: The present invention relates to a wireless transmitting device actualizing wireless communications with a high-quality modulation accuracy characteristic while keeping high frequency using efficiency. The wireless transmitting device performing wireless communications by using a frequency division multiple access method, comprising transforming unit transforming, into a frequency domain signal, a signal into which transmission data is modulated, correcting unit correcting the transformed frequency domain signal, inverse transforming unit transforming the corrected frequency domain signal into a time domain signal, and signal converting unit converting the time domain signal into an analog signal and transmitting the analog signal to analog signal processing unit, wherein the correcting unit corrects the frequency domain signal, corresponding to a frequency characteristic occurred in at least one of the signal converting unit and the analog signal processing unit.

Abstract: A time stamping system for electronic documents has a document preparation device and a time stamp issuing server. The document preparation device includes an electronic document reading device that reads an electronic document. A digest value computer computes a digest value based on the read document. A transmitter transmits the computed digest value to the time stamp server with a request for a time stamp. A receiver receives the requested time stamp from the time stamp server and an electronic writer writes the received time stamp into the electronic document.

Abstract: When carrying out a channel compensation of a data symbol, a channel estimation value of the reference symbol of the frame itself and that of a reference symbol of the preceding frame are used. In this event, if an AGC gain at the time of a channel estimation value by a reference symbol of the frame itself is different from that of a frame of the reference symbol of the preceding frame, and if an AGC gain of the reference symbol of the frame itself is the same as that of a data symbol to be subjected to a transmission compensation, then the channel estimation value by the reference symbol of the preceding frame is corrected so as to cancel the difference of the AGC gains, followed by using it for a channel compensation of the data symbol.