Abstract: The object of the present invention is to provide a cleaning apparatus for a component of a semiconductor production apparatus, which is capable of preventing the attachment of reaction products into the cleaning processing furnace by a simple structure, the present invention provides a cleaning apparatus (1) for a component of a semiconductor production apparatus including: a cleaning processing furnace (2) which is configured to house the component (10) of a semiconductor production apparatus; a heating device (3); a gas introduction pipe (4); a gas discharge pipe (5); a decompression device (6); a first temperature control device (7); a second temperature control device (8); and a purge gas supply device (9).

Abstract: A method for cleaning a component of a nitride semiconductor manufacturing apparatus to which has adhered deposits containing nitride semiconductor comprises a step for chemically treating the component of the nitride semiconductor manufacturing apparatus with a cleaning gas containing a chlorine-based gas, and a step for removing the deposits from the component of the nitride semiconductor manufacturing apparatus by spraying with a sublimable solid substance.

Abstract: A method which separates a component which is easily adsorbed by an adsorbent and a component which is not easily adsorbed by the adsorbent, from a feed gas which includes at least two kinds of components, with adsorption columns, wherein the adsorbent is filled in the adsorption columns and has strong adsorbability with respect to at least one kind of component included in the feed gas, and also has weak adsorbability with respect to at least one kind of other components included in the feed gas, and a temperature of the adsorbents which is filled in the column is maintained to be higher than the highest temperature of an ambient temperature around the adsorption columns which is variable throughout the year.

Abstract: A method for supplying a refined liquefied gas, in which prior to the supply of a liquefied gas stored in a container, the liquefied gas is refined by (1) determining the concentrations of impurities in the gas phase, then estimating the concentration of each impurity in the liquid phase from the ratio between the liquid-phase concentration and the gas-phase concentration of the impurity (gas-liquid equilibrium constant (Kn)), and assuming the amount of the gas to be discharged from the gas phase part within the refinement tank to refine the liquefied gas, (2) discharging the gas from the gas phase part to refine the liquefied gas constituting the liquid phase, (3) sampling the gas phase and ascertaining the quality of the refined liquefied gas, and (4) supplying the refined liquefied gas to a receiver from the refinement tank.

Abstract: A method which separates a component which is easily adsorbed by an adsorbent and a component which is not easily adsorbed by the adsorbent, from a feed gas which includes at least two kinds of components, with adsorption columns, wherein the adsorbent is filled in the adsorption columns and has strong adsorbability with respect to at least one kind of component included in the feed gas, and also has weak adsorbability with respect to at least one kind of other components included in the feed gas, and a temperature of the adsorbents which is filled in the column is maintained to be higher than the highest temperature of an ambient temperature around the adsorption columns which is variable throughout the year.