Abstract: A photoelectric conversion semiconductor layer is provided which is capable of providing a potential gradient in the thickness direction, can be manufactured at a lower cost than a layer formed by vacuum film forming, and capable of providing high photoelectric conversion efficiency. The photoelectric conversion semiconductor layer is a layer that generates a current by absorbing light and is formed of a particle layer in which a plurality of particles is disposed in plane and thickness directions. Preferably, the photoelectric conversion semiconductor layer includes, as the plurality of particles, a plurality of types of particles having different band-gaps, and the potential in the thickness direction of the layer is distributed.

Abstract: A photoelectric conversion semiconductor layer having high photoelectric conversion efficiency is provided at a low cost. Photoelectric conversion semiconductor layer is a layer that generates a current by absorbing light and is formed of a particle layer in which a plurality of plate-like particles is disposed only in a plane direction or a sintered body thereof, or a particle layer in which a plurality of plate-like particles is disposed in a plane direction and a thickness direction or a sintered body thereof.