Abstract: Apparatus and method capable of preparing samples adapted for observations by electron microscopy. Each sample is ion-etched. During this process, the sample stage is tilted reciprocably left and right about a tilting axis. The sample is ion-etched together with a shielding material. The sample may contain a substance that is not easily etched by the ion beam. In the present invention, such unetched portions are not produced in spite of the presence of the substance. The substance can be separated from the sample. The ion beam is directed at the sample with the boundary defined by an end surface of the shielding material. Portions of the sample at a processing position and its vicinities are etched by the beam.

Abstract: Preparing a thin-film specimen adapted for TEM (transmission electron microscopy) observation. A high-brightness pixel extraction unit extracts high-brightness pixels which form a specimen image taken by an imaging unit. The intensities becoming greater than a given threshold value as the specimen is thinned. A decision unit makes a decision as to whether the high-brightness pixels extracted by the high-brightness pixel extraction unit form a continuous sequence of pixels whose number is in excess of a given number on the specimen image. If the decision is affirmative, the decision unit sends a signal to an ion gun control unit to stop the ion-beam irradiation of the specimen.

Abstract: Method and equipment permitting one to easily prepare a good thin-film specimen adapted for observation are offered. The equipment has an ion gun tilted left and right repeatedly to etch a specimen material by an electron beam tilted left and right by 1.5° about the z-axis. Then, the ion gun is tilted left and right plural times to ion etch the specimen material. Since a portion of the specimen material is especially heavily etched, a through-hole is formed in the specimen material. A thin film having a thickness of about 100 ? is formed around the through-hole. This thickness is adapted for TEM (transmission electron microscope) observation.

Abstract: A mask for use with a sample preparation apparatus that prepares an ion-milled sample adapted to be observed by an electron microscope is offered. It is possible to prepare the sample having a desired cross section by the use of the mask. The mask, which defines the boundary between irradiated and unirradiated regions on the sample surface, has an edge portion having an increased thickness compared with the other portions. When the edge portion of the mask is etched, the original shape is almost maintained. Thus, the side surface of the mask is kept on the center axis of the ion beam.

Abstract: An ion source in which some of positive ions produced in the ionization chamber are accelerated toward a cathode and collide against a nonmagnetic member causing sputtering. Since the sputtered particles are not magnetic in nature, the particles uniformly deposit on the anode without being affected by the magnetic field produced in the ionization chamber.

Abstract: Preparing a thin-film specimen adapted for TEM (transmission electron microscopy) observation. A high-brightness pixel extraction unit extracts high-brightness pixels which form a specimen image taken by an imaging unit. The intensities becoming greater than a given threshold value as the specimen is thinned. A decision unit makes a decision as to whether the high-brightness pixels extracted by the high-brightness pixel extraction unit form a continuous sequence of pixels whose number is in excess of a given number on the specimen image. If the decision is affirmative, the decision unit sends a signal to an ion gun control unit to stop the ion-beam irradiation of the specimen.

Abstract: Method and equipment permitting one to easily prepare a good thin-film specimen adapted for observation are offered. The equipment has an ion gun tilted left and right repeatedly to etch a specimen material by an electron beam tilted left and right by 1.5° about the z-axis. Then, the ion gun is tilted left and right plural times to ion etch the specimen material. Since a portion of the specimen material is especially heavily etched, a through-hole is formed in the specimen material. A thin film having a thickness of about 100 ? is formed around the through-hole. This thickness is adapted for TEM (transmission electron microscope) observation.

Abstract: Apparatus and method capable of preparing samples adapted for observations by electron microscopy. Each sample is ion-etched. During this process, the sample stage is tilted reciprocably left and right about a tilting axis. The sample is ion-etched together with a shielding material. The sample may contain a substance that is not easily etched by the ion beam. In the present invention, such unetched portions are not produced in spite of the presence of the substance. The substance can be separated from the sample. The ion beam is directed at the sample with the boundary defined by an end surface of the shielding material. Portions of the sample at a processing position and its vicinities are etched by the beam.

Abstract: A mask for use with a sample preparation apparatus that prepares an ion-milled sample adapted to be observed by an electron microscope is offered. It is possible to prepare the sample having a desired cross section by the use of the mask. The mask, which defines the boundary between irradiated and unirradiated regions on the sample surface, has an edge portion having an increased thickness compared with the other portions. When the edge portion of the mask is etched, the original shape is almost maintained. Thus, the side surface of the mask is kept on the center axis of the ion beam.

Abstract: A method and apparatus for preparing a specimen adapted for electron microscopy comprises an evacuated specimen-processing chamber. A specimen having a surface to be processed is placed inside the processing chamber A beam-blocking member is placed close to the processed surface so as to block a part of an etching beam A first etching step is performed by directing the beam at the specimen via the blocking member. Then, the specimen and the blocking member are moved relative to each other. Finally, a second etching step is performed by directing the beam at the specimen via the blocking member. As a result, the specimen becomes a thin film and it can be observed with the electron microscope.