Abstract: Provided is a light emitting device having a phosphor layer on a surface of a semiconductor light emitting element and reducing unevenness in light distribution color, and a method of manufacturing the same. A light emitting device 100 includes a light emitting element 20 with a supporting body which is composed of a semiconductor light emitting element 1 and a supporting body 10, and a phosphor layer 7 which continuously covers an upper surface and side surfaces of the semiconductor light emitting element 1, and side surfaces of the supporting body 10. The phosphor layer 7 is configured such that at least a lower portion of the side surface of the supporting body 10 is thinner than the upper surface and the side surface of the semiconductor light emitting element 1.

Abstract: Provided is a small and thin light emitting device which has no connection failure, a high life, high performance and good light extraction efficiency. The light emitting device includes a base body comprising a base material having a pair of connection terminals on at least a first main surface, a light emitting element connected to the connection terminals, and a sealing member that seals the light emitting element, wherein the base material has a linear expansion coefficient within ±10 ppm/° C. of the linear expansion coefficient of the light emitting element.

Abstract: A lighting device includes a light-emitting component including at least one light-emitting element mounted on a base, a light guide plate guiding light emitted from the light-emitting element, a wavelength conversion member partially covering the light guide plate, and a first reflective member covering the wavelength conversion member. The light guide plate comprises two main surfaces, which include a light-extraction surface allowing light emitted from the light-emitting element to exit and a rear surface opposite to the light-extraction surface. One of two main surfaces comprises at least one recess formed in an edge region thereof. The other main surface of the light guide plate includes a part covered by the wavelength conversion member and a part exposed from the wavelength conversion member. The light-emitting element is accommodated in the recess such that a light-emitting surface of the light-emitting element faces the wavelength conversion member.

Abstract: A composite board is provided with a board and a covering member. The board includes a base made of ceramics, first wiring provided on an upper surface of the base, and second wiring provided on a lower surface of the base and electrically connected to the first wiring. The covering member covers the base such that the first wiring and the second wiring are exposed.

Abstract: A light emitting device includes a light transmissive member; a first reflector covering outer peripheral faces of the light transmissive member; a light emitting element disposed under the light transmissive member; a light guiding member covering at least a portion of the light transmissive member, a portion of a lower face of the first reflector, and at least some portions of lateral faces of the light emitting element; and a second reflector covering a portion of the lower face of the first reflector that is exposed from the light guiding member and is located outward of the light guiding member.

Abstract: A method of manufacturing a covering member includes providing a first light-reflective member having a through-hole, the through-hole having first and second openings; arranging a light-transmissive resin containing a wavelength-conversion material within the through-hole; distributing the wavelength-conversion material predominantly on a side of the first opening of the through-hole within the light-transmissive resin; and after the distributing of the wavelength-conversion material, removing a portion of the light-transmissive resin from a side of the second opening of the through-hole.

Abstract: A light emitting device includes a flip-chip mounted type light emitting element, a phosphor-containing member, and a first reflecting member. The flip-chip mounted type light emitting element has a pair of electrodes disposed on a bottom surface side. The phosphor-containing member is provided at least above the light emitting element and separated from the light emitting element. The first reflecting member is configured to cover the phosphor-containing member. An opening is in at least one of side faces of the light emitting device, the opening extracting light emitted from the light emitting element and light whose wavelength is converted by the phosphor-containing member.

Abstract: A light emitting device includes a flip-chip mounted type light emitting element, a phosphor-containing member, and a first reflecting member. The flip-chip mounted type light emitting element has a pair of electrodes disposed on a bottom surface side. The phosphor-containing member is provided at least above the light emitting element and separated from the light emitting element. The first reflecting member is configured to cover the phosphor-containing member. An opening is in at least one of side faces of the light emitting device, the opening extracting light emitted from the light emitting element and light whose wavelength is converted by the phosphor-containing member.

Abstract: A semiconductor device includes a substrate; a light emitting element flip-chip mounted on the substrate; a phosphor-containing member provided at least above the light emitting element and separated from the light emitting element; and a first reflecting member configured to cover the phosphor-containing member, at least one of a side faces of the light emitting device having an opening for extracting light emitted from the light emitting element and light wavelength-converted by the phosphor-containing member.

Abstract: Provided is a light emitting device having a phosphor layer on a surface of a semiconductor light emitting element and reducing unevenness in light distribution color, and a method of manufacturing the same. A light emitting device 100 includes a light emitting element 20 with a supporting body which is composed of a semiconductor light emitting element 1 and a supporting body 10, and a phosphor layer 7 which continuously covers an upper surface and side surfaces of the semiconductor light emitting element 1, and side surfaces of the supporting body 10. The phosphor layer 7 is configured such that at least a lower portion of the side surface of the supporting body 10 is thinner than the upper surface and the side surface of the semiconductor light emitting element 1.

Abstract: Provided is a small and thin light emitting device which has no connection failure, a high life, high performance and good light extraction efficiency. The light emitting device includes a base body comprising a base material having a pair of connection terminals on at least a first main surface, a light emitting element connected to the connection terminals, and a sealing member that seals the light emitting element, wherein the base material has a linear expansion coefficient within ±10 ppm/° C. of the linear expansion coefficient of the light emitting element.

Abstract: A wave-length conversion inorganic member can includes a base body and an inorganic particle layer on the base body. The inorganic particle layer can include particles of an inorganic wave-length conversion substance which is configured to absorb light of a first wave-length and to emit light of a second wave-length different from the first wave-length. The inorganic particle layer can include an agglomerate of a plurality of the particles. Each of the plurality of the particles are in contact with at least one of the other particles or the base body. A cover layer comprises an inorganic material, and the cover layer continuously covers a surface of the base body and surfaces of the particles. The inorganic particle layer has an interstice enclosed by the particles, or by the particles and one of the base body and the cover layer.

Abstract: A wave-length conversion inorganic member can includes a base body and an inorganic particle layer on the base body. The inorganic particle layer can include particles of an inorganic wave-length conversion substance which is configured to absorb light of a first wave-length and to emit light of a second wave-length different from the first wave-length. The inorganic particle layer can include an agglomerate of a plurality of the particles. Each of the plurality of the particles are in contact with at least one of the other particles or the base body. A cover layer comprises an inorganic material, and the cover layer continuously covers a surface of the base body and surfaces of the particles. The inorganic particle layer has an interstice enclosed by the particles, or by the particles and one of the base body and the cover layer.

Abstract: A semiconductor device includes a substrate; a light emitting element flip-chip mounted on the substrate; a phosphor-containing member provided at least above the light emitting element and separated from the light emitting element; and a first reflecting member configured to cover the phosphor-containing member, at least one of a side faces of the light emitting device having an opening for extracting light emitted from the light emitting element and light wavelength-converted by the phosphor-containing member.

Abstract: A light-emitting apparatus has a light-emitting device and a supporting board. The light-emitting device has a pair of n-electrodes with a p-electrode therebetween, on the same plane. The supporting board includes an insulating substrate on which positive and negative electrodes are formed, opposing to the p- and n-electrodes of the light-emitting device, respectively. Bonding members bond the p- and n-electrodes with the positive and negative electrodes, respectively. The positive electrode on the supporting board is formed within the width region of the p-electrode and narrower in width than the width of the p-electrode, in a cross-section along a line extending through the pair of n-electrodes. The negative electrodes oppose to the n-electrodes, respectively, with the same widths, or with that side face of each of the negative electrodes which faces the positive electrode being retracted outwardly from that side face of each of the n-electrodes which faces the p-electrode.

Abstract: A light-emitting apparatus has a light-emitting device and a supporting board. The light-emitting device has a pair of n-electrodes with a p-electrode therebetween, on the same plane. The supporting board includes an insulating substrate on which positive and negative electrodes are formed, opposing to the p- and n-electrodes of the light-emitting device, respectively. Bonding members bond the p- and n-electrodes with the positive and negative electrodes, respectively. The positive electrode on the supporting board is formed within the width region of the p-electrode and narrower in width than the width of the p-electrode, in a cross-section along a line extending through the pair of n-electrodes. The negative electrodes oppose to the n-electrodes, respectively, with the same widths, or with that side face of each of the negative electrodes which faces the positive electrode being retracted outwardly from that side face of each of the n-electrodes which faces the p-electrode.

Abstract: A straight tube lamp (100) includes: an LED substrate (1) having a plurality of LEDs (2) mounted thereon; a heat dissipating member (3), for dissipating heat from the LED substrate (1), to which the LED substrate (1) is attached; and a cylindrical case (6) which contains the heat dissipating member (3). A heat insulating member (4) is provided between the heat dissipating member (3) and the case (6).

Abstract: A light emitting device comprises a rectangular element mounted upon a mounting substrate via a heat-melted connecting material, wherein second substrate electrodes are formed conforming to the recesses of a first substrate electrode and a portion of the outer periphery of the first and second substrate electrodes is provided with first extended sections that extend farther outward than the outer periphery of the aforementioned element. The aforementioned first extended sections are formed in at least one or more locations per one side of the outer periphery of the aforementioned rectangular element; the aforementioned first substrate electrode is provided with second extended sections that are formed on at least one of both ends of the aforementioned recesses flanking the first extended sections of the aforementioned second substrate electrodes; and the aforementioned second extended sections extend farther outward than the outer periphery of the aforementioned element.

Abstract: A light-emitting apparatus has a light-emitting device and a supporting board. The light-emitting device has a pair of n-electrodes with a p-electrode therebetween, on the same plane. The supporting board includes an insulating substrate on which positive and negative electrodes are formed, opposing to the p- and n-electrodes of the light-emitting device, respectively. Bonding members bond the p- and n-electrodes with the positive and negative electrodes, respectively. The positive electrode on the supporting board is formed within the width region of the p-electrode and narrower in width than the width of the p-electrode, in a cross-section along a line extending through the pair of n-electrodes. The negative electrodes oppose to the n-electrodes, respectively, with the same widths, or with that side face of each of the negative electrodes which faces the positive electrode being retracted outwardly from that side face of each of the n-electrodes which faces the p-electrode.

Abstract: A wave-length conversion inorganic member can includes a base body and an inorganic particle layer on the base body. The inorganic particle layer can include particles of an inorganic wave-length conversion substance which is configured to absorb light of a first wave-length and to emit light of a second wave-length different from the first wave-length. The inorganic particle layer can include an agglomerate of a plurality of the particles. Each of the plurality of the particles are in contact with at least one of the other particles or the base body. A cover layer comprises an inorganic material, and the cover layer continuously covers a surface of the base body and surfaces of the particles. The inorganic particle layer has an interstice enclosed by the particles, or by the particles and one of the base body and the cover layer.