Abstract: On a semiconductor layer 1 consisting of a substrate of a semiconductor single crystal or the like, a metallic layer 2 of a thickness of 20 nm or less is formed. The metallic layer 2 comprises a first area A directly contacting with the semiconductor layer 1, and a second area B that is interposed by an intermediate layer 3 consisting of an insulator, a metal different from the metallic layer 2 or a semiconductor different from the semiconductor layer 1 between the semiconductor 1 and the metallic layer 2, and of a thickness of 10 nm or less. The first area and the second area are different in their Schottky currents, further in their Schottky barrier heights. Any one of the respective areas A and B has an area of nanometer level, and the respective interfaces in each of the areas A and B have an essentially uniform potential barrier, respectively. Such a film-like composite structure contributes to a minute semiconductor device of nanometer level and realization of a new functional device.

Abstract: A superconducting element is disclosed which comprises a lower superconducting layer, an upper superconducting layer, and an intermediate layer interposed between the lower and upper superconducting layers. The lower and upper superconducting layers are both form of a superconducting cuprate. The intermediate layer is formed of a layered cuprate containing in the crystal structure thereof multiple fluorite blocks represented by the formula:[B]AE.sub.2 (RE1.sub.1-y RE2.sub.y).sub.m+1 Cu.sub.2 O.sub.z(wherein [B] stands for a block layer, AE for an alkaline earth element, RE1 for at least one element selected from the group consisting of lanthanide elements and actinoid elements which form ions of valency of larger than 3, RE2 for at least one element selected from the group consisting of lanthanide elements which form ions of valency of 3 and yttrium, m for a number satisfying the expression m.gtoreq.2, y for a number satisfying the expression 0.ltoreq.y<1, and z for the oxygen content).

Abstract: A method is disclosed which comprises setting a substrate within a mixed gas atmosphere containing 0.1 to 5% of oxygen gas and a balance as an inert gas, and sputtering a target member containing Ln, M, Cu and O within that atmosphere to obtain an oxygen-deficient perovskite type oxide superconducting thin-film of substantially Ln:M:Cu:O=1:2:3:(7-.delta.), where Ln represents at least one element selected from the rare earth elements and M represents at least one element selected from the group consisting of Ba, Sr, and Ca. The oxide superconducting thin-film of that composition ratio has a critical temperature of over 77K.

Abstract: In an optical disk having an optical recording layer which is capable of having information thereon using a laser beam with information superposed by modulation there is formed a spiral protruding or recessed track having a width equal to about half or less of the wavelength of a laser beam to be used, this track being utilized as the guiding track of the laser beam. A method for manufacturing such an optical disk is also disclosed according to which a recessed track for tracking is formed by plastic deformation of the upper surface of an original disk with a hard processing stylus such as a diamond stylus. The original disk thus produced is utilized for forming an optical recording disk having a protruding or recessed guiding track.

Abstract: In an optical disk having an optical recording layer which is capable of having information thereon using a laser beam with information superposed by modulation there is formed a spiral protruding or recessed track having a width equal to about half or less of the wavelength of a laser beam to be used, this track being utilized as the guiding track of the laser beam. A method for manufacturing such an optical disk is also disclosed according to which a recessed track for tracking is formed by plastic deformation of the upper surface of an original disk with a hard processing stylus such as a diamond stylus. The original disk thus produced is utilized for forming an optical recording disk having a protruding or recessed guiding track.

Abstract: A method of making an optical memory disk and a product thereby comprising the steps of applying a thin tellurium film to a base plate, and of forming an oxidizing layer on the surface of the tellurium by oxidizing treatment of the tellurium film, and an optical memory disk produced by the above-mentioned method.

Abstract: A magnetic tape device having two independently operative tape transports incorporated in one common deck which comprises means for selectively performing recording by a first transport in combination with reproducing by a second transport and reproducing by the first transport in combination with recording by the second transport, and means for recording a reproduced signal from either one of the transports on the other transport through a common reproducing and recording process circuit, thereby to effect dubbing in either direction.

Abstract: A method of making an optical memory disk and a product thereby comprising the steps of applying a thin tellurium film to a base plate, and of forming an oxidizing layer on the surface of the tellurium by oxidizing treatment of the tellurium film, and an optical memory disk produced by the above-mentioned method.

Abstract: An electrochromic display device comprising a first electrode composed of a substrate and a patterned conductive film formed thereon, an electrochromic material layer formed to cover the entire surface of the conductive film, a counter electrode disposed a predetermined distance apart from the first electrode, and an electrolyte disposed between these two electrodes.