Patents by Inventor Tadao Nakatsuka

Tadao Nakatsuka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for detecting etching endpoint, and etching apparatus and etching system using the method thereof
    Patent number: 6669810
    Abstract: A method for detecting an etching endpoint and a plasma etching apparatus and a plasma etching system using such a device are disclosed, in which time series data of a signal corresponding to the amount of light of the plasma light generated during the plasma etching process are arithmetically processed, so that the change of light amount is corrected and an etching endpoint is detected from the time series data after the correction.
    Type: Grant
    Filed: October 14, 1998
    Date of Patent: December 30, 2003
    Assignee: Sumitomo Metal Industries, Ltd.
    Inventors: Toshiya Miyazaki, Toshihiro Hayami, Tadao Nakatsuka, Hiroyuki Tanaka, Toshiyuki Nakamura
  • Etching apparatus and etching system using the method thereof
    Patent number: 6149761
    Abstract: A method for detecting an etching endpoint and a plasma etching apparatus and a plasma etching system using such a device are disclosed, in which time series data of a signal corresponding to the amount of light of the plasma light generated during the plasma etching process are arithmetically processed, so that the change of light amount is corrected and an etching endpoint is detected from the time series data after the correction.
    Type: Grant
    Filed: December 28, 1999
    Date of Patent: November 21, 2000
    Assignee: Sumitomo Metal Industries Limited
    Inventors: Toshiya Miyazaki, Toshihiro Hayami, Tadao Nakatsuka, Hiroyuki Tanaka, Toshiyuki Nakamura
  • Method for detecting etching endpoint, and etching apparatus and etching system using the method thereof
    Patent number: 5885472
    Abstract: A method for detecting an etching endpoint and a plasma etching apparatus and a plasma etching system using such a device are disclosed, in which time series data of a signal corresponding to the amount of light of the plasma light generated during the plasma etching process are arithmetically processed, so that the change of light amount is corrected and an etching endpoint is detected from the time series data after the correction.
    Type: Grant
    Filed: October 7, 1996
    Date of Patent: March 23, 1999
    Assignee: Sumitomo Metal Industries Limited
    Inventors: Toshiya Miyazaki, Toshihiro Hayami, Tadao Nakatsuka, Hiroyuki Tanaka, Toshiyuki Nakamura
  • Method for detecting etching endpoint and etching apparatus and etching system using the method thereof
    Patent number: 5626714
    Abstract: A method for detecting an etching endpoint and a plasma etching apparatus and a plasma etching system using such a device are disclosed, in which time series data of a signal corresponding to the amount of light of the plasma light generated during the plasma etching process are arithmetically processed, so that the change of light amount is corrected and an etching endpoint is detected from the time series data after the correction.
    Type: Grant
    Filed: December 6, 1995
    Date of Patent: May 6, 1997
    Assignee: Sumitomo Metal Industries Limited
    Inventors: Toshiya Miyazaki, Toshihiro Hayami, Tadao Nakatsuka, Hiroyuki Tanaka, Toshiyuki Nakamura