Abstract: There is provided a solid-state imaging device including: a first substrate including a first semiconductor substrate and a first wiring layer, the first semiconductor substrate having a pixel unit with pixels; a second substrate including a second semiconductor substrate and a second wiring layer, the second semiconductor substrate having a circuit with a predetermined function; and a third substrate including a third semiconductor substrate and a third wiring layer, the third semiconductor substrate having a circuit with a predetermined function, the first, second, and third substrates being stacked in this order, the first substrate and the second substrate being bonded together with the first wiring layer and the second wiring layer opposed to each other, a first coupling structure on bonding surfaces of the first substrate and the second substrate, and including an electrode junction structure with electrodes formed on the respective bonding surfaces in direct contact with each other.

Abstract: A solid-state imaging device including a first substrate on which a pixel unit is formed, and a first semiconductor substrate and a first multi-layered wiring layer are stacked, a second substrate on which a circuit having a predetermined function is formed, and a second semiconductor substrate and a second multi-layered wiring layer are stacked, and a third substrate on which a circuit having a predetermined function is formed, and a third semiconductor substrate and a third multi-layered wiring layer are stacked. The first substrate, the second substrate, and the third substrate are stacked in this order. A first coupling structure for electrically coupling a circuit of the first substrate and the circuit of the second substrate to each other does not include a coupling structure formed from the first substrate as a base over bonding surfaces of the first substrate and the second substrate.

Abstract: A method for recovering or producing silicon, that can recover or produce silicon using cutting scraps containing silicon carbide abrasive grains and silicon as raw materials without separating those is provided. The present invention is a method for recovering or producing silicon from cutting scraps containing silicon carbide, which are produced during a cutting or grinding of silicon ingots or silicon wafers, wherein the method comprises producing silicon by heating the cutting scraps containing silicon carbide, and a silica raw material.

Abstract: A carbon black aggregate having a surface hardness of at least 70 g and having a covering.

Abstract: A method for producing carbon black by means of a horizontal carbon black production furnace having a first reaction zone in which a mixture of an oxygen-containing gas and a fuel is burned to form a high temperature gas stream, a second reaction zone in which a hydrocarbon feedstock is supplied and reacted with the high temperature gas stream formed in the first reaction zone, and a third reaction zone in which quenching water is sprayed into the gas mixture from the second reaction zone to terminate the reaction, wherein the second reaction zone is constructed to have a hollow cylindrical structure with at least two cylindrical sections having different inner diameters connected to one another and the hydrocarbon feedstock is divided for supply so that it is supplied to at least two locations including an upstream cylindrical section to which the hydrocarbon feedstock is first supplied and a cylindrical section located downstream thereof and so that the flow velocities of gases passing through the respectiv