Patents by Inventor Tadashi Kamata

Tadashi Kamata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor integrated circuit device, method for producing the same, and ion implanter for use in the method
    Patent number: 5244820
    Abstract: The present invention relates to an ion implantation process in a wafer process for a semiconductor integrated circuit device. Particularly, according to the present invention, a shallow junction can be formed by performing the implantation of ion while holding a wafer to be processed at a low temperature.
    Type: Grant
    Filed: August 3, 1992
    Date of Patent: September 14, 1993
    Inventors: Tadashi Kamata, Mitsuharu Honda, Jun Sugiura, Nobuo Owada, Hizuru Yamaguchi
  • Ion implanting apparatus, having ion contacting surfaces made of high purity silicon, for fabricating semiconductor integrated circuit devices
    Patent number: 5134301
    Abstract: An ion injecting apparatus and a process for fabricating a semiconductor integrated circuit device by using the ion implanting apparatus is provided. When a wafer, e.g., a Si wafer, is to be implanted with ions, an electrode or the like made of a highly pure Si material is used to achieve a high throughput and a high density implantation. This serves to prevent the occurrence of contamination due to sputtering of the electrode member along the beam passage in the ion implanting apparatus during the high density beam implantation.
    Type: Grant
    Filed: July 2, 1990
    Date of Patent: July 28, 1992
    Assignee: Hitachi, Ltd.
    Inventors: Tadashi Kamata, Jun Sugiura, Mitsuharu Honda