Abstract: Before a temperature characteristic of a band gap reference circuit is tested, temperature dependencies of a reference voltage and an absolute temperature proportional voltage for a plurality of samples are measured. When the temperature characteristic is tested, based on a difference ?Vref between the reference voltage of the band gap reference circuit at a predetermined temperature and a median value of the reference voltages of the plurality of samples, a difference ?Vptat between the absolute temperature proportional voltage of the band gap reference circuit at a predetermined temperature and a median value of the absolute temperature proportional voltages of the plurality of samples is calculated.

Abstract: A semiconductor device includes a receiving terminal for receiving a signal transmitted through a signal transmission line, a reference plane voltage terminal connected to a refence plane as a refence for the signal on the signal transmission line and a voltage generating circuit configured to generate a refence plane voltage to be supplied to the reference plane voltage terminal based on the signal received by the receiving terminal.

Abstract: A semiconductor device includes a semiconductor package having a differential signal terminal pair, and a wiring board. The wiring board includes a first and a second signal transmission line and a reference potential plane. The first and the second signal transmission line is formed in a first conductive layer and connected to the differential signal terminal pair. The reference potential plane includes a conductive pattern formed in a different conductive layer from the first conductive layer. The conductive pattern includes a first and a second region overlapped with the first and the second signal transmission line in plan view, respectively. The conductive pattern has a plurality of openings in the first and the second region. An area of a first conductive portion of the reference potential plane in the first region becomes equal to an area of a second conductive portion of the reference potential plane in the second region.

Abstract: The abnormal power supply voltage detection device has a function of accurately detecting the abnormal voltage in accordance with the characteristics of the semiconductor element for each semiconductor chip. Circuit group for operating the adjustment function has a function of preventing the influence of the power supply voltage of the logic system such as control in the semiconductor product malfunctions becomes abnormal. Furthermore, it has a function of detecting the abnormal voltage of the various power supplies in the semiconductor product. It also has a function to test the abnormal voltage detection function in the normal power supply voltage range during use of semiconductor products.

Abstract: According to one embodiment, a semiconductor device 1 includes a temperature sensor module 10 that outputs a non-linear digital value with respect to temperature and a substantially linear sensor voltage value with respect to the temperature, a storage unit 30 that stores the temperature, the digital value, and the sensor voltage value, and a controller 40 that calculates a characteristic formula using the temperature, the digital value, and the sensor voltage value stored in the storage unit 30, in which the temperature, the digital value, and the sensor voltage value stored in the storage unit 30 include absolute temperature under measurement of absolute temperature, the digital value at the absolute temperature, and the sensor voltage value at the absolute temperature.

Abstract: A semiconductor device includes a first temperature sensor module, a second temperature sensor module, a first temperature controller, and a second temperature controller. The first temperature sensor module includes a bandgap reference circuit that outputs a plurality of divided voltages, and a first conversion circuit that performs analog-to-digital conversion processing on one of the plurality of divided voltages to generate a first digital value. The second temperature sensor module includes a second conversion circuit that performs analog-to-digital conversion processing on the one of the plurality of divided voltages to generate a second digital value. The first temperature sensor controller converts the first digital value to a first temperature. The second temperature sensor controller converts the second digital value to a second temperature.

Abstract: The abnormal power supply voltage detection device has a function of accurately detecting the abnormal voltage in accordance with the characteristics of the semiconductor element for each semiconductor chip. Circuit group for operating the adjustment function has a function of preventing the influence of the power supply voltage of the logic system such as control in the semiconductor product malfunctions becomes abnormal. Furthermore, it has a function of detecting the abnormal voltage of the various power supplies in the semiconductor product. It also has a function to test the abnormal voltage detection function in the normal power supply voltage range during use of semiconductor products.

Abstract: The abnormal power supply voltage detection device has a function of accurately detecting the abnormal voltage in accordance with the characteristics of the semiconductor element for each semiconductor chip. Circuit group for operating the adjustment function has a function of preventing the influence of the power supply voltage of the logic system such as control in the semiconductor product malfunctions becomes abnormal. Furthermore, it has a function of detecting the abnormal voltage of the various power supplies in the semiconductor product. It also has a function to test the abnormal voltage detection function in the normal power supply voltage range during use of semiconductor products.

Abstract: The abnormal power supply voltage detection device has a function of accurately detecting the abnormal voltage in accordance with the characteristics of the semiconductor element for each semiconductor chip. Circuit group for operating the adjustment function has a function of preventing the influence of the power supply voltage of the logic system such as control in the semiconductor product malfunctions becomes abnormal. Furthermore, it has a function of detecting the abnormal voltage of the various power supplies in the semiconductor product. It also has a function to test the abnormal voltage detection function in the normal power supply voltage range during use of semiconductor products.

Abstract: According to one embodiment, a semiconductor device 1 includes a temperature sensor module 10 that outputs a non-linear digital value with respect to temperature and a substantially linear sensor voltage value with respect to the temperature, a storage unit 30 that stores the temperature, the digital value, and the sensor voltage value, and a controller 40 that calculates a characteristic formula using the temperature, the digital value, and the sensor voltage value stored in the storage unit 30, in which the temperature, the digital value, and the sensor voltage value stored in the storage unit 30 include absolute temperature under measurement of absolute temperature, the digital value at the absolute temperature, and the sensor voltage value at the absolute temperature.

Abstract: According to one embodiment, a semiconductor device 1 includes a temperature sensor module 10 that outputs a non-linear digital value with respect temperature and a substantial linear sensor voltage value with respect to the temperature, a storage unit 30 that stores the temperature, the digital value, and the sensor voltage value, and a controller 40 that calculates a characteristic formula using the temperature, the digital value, and the sensor voltage value stored in the storage 30, in which the temperature, the digital value, and the sensor voltage value stored in the storage unit 30 include absolute temperature under measurement of absolute temperature, the digital value at the absolute temperature, and the sensor voltage value at the absolute temperature.

Abstract: A semiconductor device includes a first temperature sensor module, a second temperature sensor module, a first temperature controller, and a second temperature controller. The first temperature sensor module includes a bandgap reference circuit that outputs a plurality of divided voltages, and a first conversion circuit that performs analog-to-digital conversion processing on one of the plurality of divided voltages to generate a first digital value. The second temperature sensor module includes a second conversion circuit that performs analog-to-digital conversion processing on the one of the plurality of divided voltages to generate a second digital value. The first temperature sensor controller converts the first digital value to a first temperature. The second temperature sensor controller converts the second digital value to a second temperature.

Abstract: According to one embodiment, a semiconductor device 1 includes a temperature sensor module 10 that outputs a non-linear digital value with respect temperature and a substantial linear sensor voltage value with respect to the temperature, a storage unit 30 that stores the temperature, the digital value, and the sensor voltage value, and a controller 40 that calculates a characteristic formula using the temperature, the digital value, and the sensor voltage value stored in the storage 30, in which the temperature, the digital value, and the sensor voltage value stored in the storage unit 30 include absolute temperature under measurement of absolute temperature, the digital value at the absolute temperature, and the sensor voltage value at the absolute temperature.

Abstract: According to one embodiment, a semiconductor device 1 includes a temperature sensor module 10 that outputs a non-linear digital value with respect to temperature and a substantially linear sensor voltage value with respect to the temperature, a storage unit 30 that stores the temperature, the digital value, and the sensor voltage value, and a controller 40 that calculates a characteristic formula using the temperature, the digital value, and the sensor voltage value stored in the storage unit 30, in which the temperature, the digital value, and the sensor voltage value stored in the storage unit 30 include absolute temperature under measurement of absolute temperature, the digital value at the absolute temperature, and the sensor voltage value at the absolute temperature.

Abstract: According to one embodiment, a semiconductor device 1 includes a temperature sensor module 10 that outputs a non-linear digital value with respect to temperature and a substantially linear sensor voltage value with respect to the temperature, a storage unit 30 that stores the temperature, the digital value, and the sensor voltage value, and a controller 40 that calculates a characteristic formula using the temperature, the digital value, and the sensor voltage value stored in the storage unit 30, in which the temperature, the digital value, and the sensor voltage value stored in the storage unit 30 include absolute temperature under measurement of absolute temperature, the digital value at the absolute temperature, and the sensor voltage value at the absolute temperature.

Abstract: A monitor circuit includes a reference voltage generating unit that generates first and second reference voltages, a first amplifier unit that amplifies a differential voltage between the first reference voltage and the second reference voltage, a second amplifier unit that amplifies a differential voltage between an internal power supply voltage being supplied to a functional block provided in the semiconductor integrated circuit and the first reference voltage, and a comparator unit that compares an amplification result of the first amplifier unit with an amplification result of the second amplifier unit and outputs a comparison result as a measurement result.

Abstract: To suppress an increase in the number of voltage comparators with an expansion in a chip temperature detection range, a temperature sensor in a semiconductor device includes a temperature detection circuit for outputting a voltage according to the chip temperature, a reference voltage generating circuit for generating a plurality of reference voltages, and a plurality of voltage comparators for comparing each reference voltage obtained by the reference voltage generating circuit with an output voltage of the temperature detection circuit and thereby generating a chip temperature detection signal configured with multiple bits. Further, the temperature sensor includes a control circuit for controlling the reference voltages generated by the reference voltage generating circuit based on the chip temperature detection signal and thereby changing correspondence between the chip temperature detection signal and the chip temperature to shift a chip temperature detection range.

Abstract: A temperature sensor in a semiconductor device includes a temperature detection circuit for outputting a voltage according to the chip temperature, a reference voltage generating circuit for generating a plurality of reference voltages, and a plurality of voltage comparators for comparing each reference voltage with an output voltage of the temperature detection circuit and thereby generating a chip temperature detection signal configured with multiple bits. Further, the temperature sensor includes a control circuit for controlling the reference voltages generated by the reference voltage generating circuit based on the chip temperature detection signal and thereby changing correspondence between the chip temperature detection signal and the chip temperature to shift a chip temperature detection range.

Abstract: A monitor circuit includes a reference voltage generating unit that generates first and second reference voltages, a first amplifier unit that amplifies a differential voltage between the first reference voltage and the second reference voltage, a second amplifier unit that amplifies a differential voltage between an internal power supply voltage being supplied to a functional block provided in the semiconductor integrated circuit and the first reference voltage, and a comparator unit that compares an amplification result of the first amplifier unit with an amplification result of the second amplifier unit and outputs a comparison result as a measurement result.

Abstract: A monitor circuit includes a reference voltage generating unit that generates first and second reference voltages, a first amplifier unit that amplifies a differential voltage between the first reference voltage and the second reference voltage, a second amplifier unit that amplifies a differential voltage between an internal power supply voltage being supplied to a functional block provided in the semiconductor integrated circuit and the first reference voltage, and a comparator unit that compares an amplification result of the first amplifier unit with an amplification result of the second amplifier unit and outputs a comparison result as a measurement result.