Patents by Inventor Tadashi Kotsugi
Tadashi Kotsugi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9691643Abstract: An etching apparatus includes a controller configured to control a high frequency power supply to supply a high frequency power to a mounting table for etching a polymer layer formed on a base layer placed on the mounting table, using plasma generated from a predetermined gas supplied from a gas supply source by the high frequency power, the polymer layer having a periodic pattern of a first polymer and a second polymer formed by self-assembling the first polymer and the second polymer of a block copolymer that is capable of being self-assembled, the high frequency power being set for etching the polymer layer using the generated plasma such that the second polymer is removed and a pattern of the first polymer is formed for subsequently etching the base layer using the pattern of the first polymer as a mask.Type: GrantFiled: September 29, 2014Date of Patent: June 27, 2017Assignee: Tokyo Electron LimitedInventors: Eiichi Nishimura, Tadashi Kotsugi, Fumiko Yamashita
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Patent number: 9245764Abstract: This semiconductor device manufacturing method is provided with: a film-forming step wherein a silicon nitride layer or a silicon oxide layer is formed such that a side wall portion of a silicon-containing layer, which is formed on a substrate and patterned, is covered with the silicon nitride layer or the silicon oxide layer; and a plasma etching step wherein the silicon-containing layer is selectively removed, and the silicon nitride layer or the silicon oxide layer formed on the side wall portion is left. In the plasma etching step, an etching gas containing SF6 gas is used.Type: GrantFiled: November 16, 2012Date of Patent: January 26, 2016Assignee: TOKYO ELECTRON LIMITEDInventors: Eiichi Nishimura, Tadashi Kotsugi, Fumiko Yamashita, Kenji Adachi
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Patent number: 8993352Abstract: A plasma processing method is used to etch a multilayered material having a stacked structure, in which a first magnetic layer, an insulating layer, a second magnetic layer, and a mask material are stacked in sequence, in a plasma processing apparatus including a processing chamber that partitions a processing space where plasma is generated and a gas supply unit that supplies a processing gas into the processing space. The plasma processing method includes a mask forming process of forming a mask on the second magnetic layer by etching the mask material; an etching process of supplying the processing gas into the processing chamber to generate plasma, etching the second magnetic layer by the mask, and stopping the etching on a surface of the insulating layer. Further, the second magnetic layer contains CoFeB, the insulating layer contains MgO, and the processing gas contains H2 and F or a fluorine compound.Type: GrantFiled: November 14, 2013Date of Patent: March 31, 2015Assignee: Tokyo Electron LimitedInventors: Eiichi Nishimura, Tadashi Kotsugi, Takashi Sone
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Publication number: 20150079790Abstract: This semiconductor device manufacturing method is provided with: a film-forming step wherein a silicon nitride layer or a silicon oxide layer is formed such that a side wall portion of a silicon-containing layer, which is formed on a substrate and patterned, is covered with the silicon nitride layer or the silicon oxide layer; and a plasma etching step wherein the silicon-containing layer is selectively removed, and the silicon nitride layer or the silicon oxide layer formed on the side wall portion is left. In the plasma etching step, an etching gas containing SF6 gas is used.Type: ApplicationFiled: November 16, 2012Publication date: March 19, 2015Applicant: TOKYO ELECTRON LIMITEDInventors: Eiichi Nishimura, Tadashi Kotsugi, Fumiko Yamashita, Kenji Adachi
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Publication number: 20150013908Abstract: An etching apparatus includes a controller configured to control a high frequency power supply to supply a high frequency power to a mounting table for etching a polymer layer formed on a base layer placed on the mounting table, using plasma generated from a predetermined gas supplied from a gas supply source by the high frequency power, the polymer layer having a periodic pattern of a first polymer and a second polymer formed by self-assembling the first polymer and the second polymer of a block copolymer that is capable of being self-assembled, the high frequency power being set for etching the polymer layer using the generated plasma such that the second polymer is removed and a pattern of the first polymer is formed for subsequently etching the base layer using the pattern of the first polymer as a mask.Type: ApplicationFiled: September 29, 2014Publication date: January 15, 2015Inventors: Eiichi NISHIMURA, Tadashi KOTSUGI, Fumiko YAMASHITA
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Patent number: 8877081Abstract: An etching method of etching a periodic pattern formed by self-assembling a first polymer and a second polymer of a block copolymer that is capable of being self-assembled, the etching method includes supplying a high frequency power which is set such that a great amount of ion energy is distributed within a range smaller than ion energy distribution at which an etching yield of the first polymer is generated and larger than or equal to ion energy distribution at which an etching yield of the second polymer is generated, and supplying a predetermined gas, generating plasma from the supplied gas by the high frequency power, and etching the periodic pattern on a processing target object by using the generated plasma.Type: GrantFiled: January 22, 2013Date of Patent: November 4, 2014Assignee: Tokyo Electron LimitedInventors: Eiichi Nishimura, Tadashi Kotsugi, Fumiko Yamashita
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Publication number: 20140141532Abstract: A plasma processing method is used to etch a multilayered material having a stacked structure, in which a first magnetic layer, an insulating layer, a second magnetic layer, and a mask material are stacked in sequence, in a plasma processing apparatus including a processing chamber that partitions a processing space where plasma is generated and a gas supply unit that supplies a processing gas into the processing space. The plasma processing method includes a mask forming process of forming a mask on the second magnetic layer by etching the mask material; an etching process of supplying the processing gas into the processing chamber to generate plasma, etching the second magnetic layer by the mask, and stopping the etching on a surface of the insulating layer. Further, the second magnetic layer contains CoFeB, the insulating layer contains MgO, and the processing gas contains H2 and F or a fluorine compound.Type: ApplicationFiled: November 14, 2013Publication date: May 22, 2014Applicant: Tokyo Electron LimitedInventors: Eiichi Nishimura, Tadashi Kotsugi, Takashi Sone
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Patent number: 7554095Abstract: A substrate processing apparatus which irradiates a substrate under processing with an electron beam and processes the substrate with the electron beam is disclosed. The substrate processing apparatus includes an electron beam generation mechanism which generates the electron beam, first area having a plurality of first static electricity deflecting devices whose thicknesses gradually increase in a traveling direction of the electron beam, and a second area disposed on a downstream side of the electron beam of the first area and having a plurality of second static electricity deflecting devices whose thicknesses are nearly same in the traveling direction of the electron beam. The substrate processing apparatus may further include a plurality of lenses whose thicknesses gradually decrease in the traveling direction of the electron beam, at least one of the plurality of lenses being disposed in each of the first area and the second area.Type: GrantFiled: October 31, 2007Date of Patent: June 30, 2009Assignee: Tokyo Electron LimitedInventors: Takashi Fuse, Tadashi Kotsugi, Kyo Tsuboi, Koji Takeya
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Patent number: 7550739Abstract: A substrate processing apparatus which irradiates a substrate under processing with an electron beam and processes the substrate with the electron beam is disclosed. The substrate processing apparatus includes an electron beam generation mechanism which generates the electron beam, first area having a plurality of first static electricity deflecting devices whose thicknesses gradually increase in a traveling direction of the electron beam, and a second area disposed on a downstream side of the electron beam of the first area and having a plurality of second static electricity deflecting devices whose thicknesses are nearly same in the traveling direction of the electron beam. The substrate processing apparatus may further include a plurality of lenses whose thicknesses gradually decrease in the traveling direction of the electron beam, at least one of the plurality of lenses being disposed in each of the first area and the second area.Type: GrantFiled: December 22, 2006Date of Patent: June 23, 2009Assignee: Tokyo Electron LimitedInventors: Takashi Fuse, Tadashi Kotsugi, Kyo Tsuboi, Koji Takeya
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Patent number: 7521687Abstract: A substrate processing apparatus which irradiates a substrate under processing with an electron beam and processes the substrate with the electron beam is disclosed. The substrate processing apparatus includes an electron beam generation mechanism which generates the electron beam, first area having a plurality of first static electricity deflecting devices whose thicknesses gradually increase in a traveling direction of the electron beam, and a second area disposed on a downstream side of the electron beam of the first area and having a plurality of second static electricity deflecting devices whose thicknesses are nearly same in the traveling direction of the electron beam. The substrate processing apparatus may further include a plurality of lenses whose thicknesses gradually decrease in the traveling direction of the electron beam, at least one of the plurality of lenses being disposed in each of the first area and the second area.Type: GrantFiled: December 22, 2006Date of Patent: April 21, 2009Assignee: Tokyo Electron LimitedInventors: Takashi Fuse, Tadashi Kotsugi, Kyo Tsuboi, Koji Takeya
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Publication number: 20090008579Abstract: A current density distribution characteristic within a beam pattern on a target object can be improved by using a simple-structured electron optical system and a single patterned beam-defining aperture. With an aperture layout modified to be physically fabricable, a current density distribution within the beam pattern is obtained (S5). Then, a current density uniformity is determined by applying preset determination threshold values to the current density distribution within the beam pattern BP obtained as described above (S6), and if it is found not to fall within a tolerance range, tentative inner block portions are set in tentative electron ray passing areas (S7 and S8). Subsequently, by appropriately iterating steps S5 to S8 for the aperture layout modified or renewed by the tentative inner block portions as described above, the tentative electron ray passing areas and the tentative inner block portions, satisfying determination criteria, are decided (S8).Type: ApplicationFiled: September 12, 2008Publication date: January 8, 2009Applicants: Tokyo Electron Limited, Multibeam Systems Inc.Inventors: Koji TAKEYA, Takashi FUSE, Tadashi KOTSUGI, N. William PARKER
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Publication number: 20080067429Abstract: A substrate processing apparatus which irradiates a substrate under processing with an electron beam and processes the substrate with the electron beam is disclosed. The substrate processing apparatus includes an electron beam generation mechanism which generates the electron beam, first area having a plurality of first static electricity deflecting devices whose thicknesses gradually increase in a traveling direction of the electron beam, and a second area disposed on a downstream side of the electron beam of the first area and having a plurality of second static electricity deflecting devices whose thicknesses are nearly same in the traveling direction of the electron beam. The substrate processing apparatus may further include a plurality of lenses whose thicknesses gradually decrease in the traveling direction of the electron beam, at least one of the plurality of lenses being disposed in each of the first area and the second area.Type: ApplicationFiled: October 31, 2007Publication date: March 20, 2008Applicant: TOKYO ELECTRON LIMITEDInventors: Takashi Fuse, Tadashi Kotsugi, Kyo Tsuboi, Koji Takeya
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Publication number: 20080062608Abstract: A substrate processing apparatus which irradiates a substrate under processing with an electron beam and processes the substrate with the electron beam is disclosed. The substrate processing apparatus includes an electron beam generation mechanism which generates the electron beam, first area having a plurality of first static electricity deflecting devices whose thicknesses gradually increase in a traveling direction of the electron beam, and a second area disposed on a downstream side of the electron beam of the first area and having a plurality of second static electricity deflecting devices whose thicknesses are nearly same in the traveling direction of the electron beam. The substrate processing apparatus may further include a plurality of lenses whose thicknesses gradually decrease in the traveling direction of the electron beam, at least one of the plurality of lenses being disposed in each of the first area and the second area.Type: ApplicationFiled: October 31, 2007Publication date: March 13, 2008Applicant: TOKYO ELECTRON LIMITEDInventors: Takashi FUSE, Tadashi KOTSUGI, Kyo TSUBOI, Koji TAKEYA
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Publication number: 20070228275Abstract: A substrate processing apparatus which irradiates a substrate under processing with an electron beam and processes the substrate with the electron beam is disclosed. The substrate processing apparatus includes an electron beam generation mechanism which generates the electron beam, first area having a plurality of first static electricity deflecting devices whose thicknesses gradually increase in a traveling direction of the electron beam, and a second area disposed on a downstream side of the electron beam of the first area and having a plurality of second static electricity deflecting devices whose thicknesses are nearly same in the traveling direction of the electron beam. The substrate processing apparatus may further include a plurality of lenses whose thicknesses gradually decrease in the traveling direction of the electron beam, at least one of the plurality of lenses being disposed in each of the first area and the second area.Type: ApplicationFiled: December 22, 2006Publication date: October 4, 2007Applicant: e-Beam CorporationInventors: Takashi FUSE, Tadashi Kotsugi, Kyo Tsuboi, Koji Takeya
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Publication number: 20070228285Abstract: A substrate processing apparatus which irradiates a substrate under processing with an electron beam and processes the substrate with the electron beam is disclosed. The substrate processing apparatus includes an electron beam generation mechanism which generates the electron beam, first area having a plurality of first static electricity deflecting devices whose thicknesses gradually increase in a traveling direction of the electron beam, and a second area disposed on a downstream side of the electron beam of the first area and having a plurality of second static electricity deflecting devices whose thicknesses are nearly same in the traveling direction of the electron beam. The substrate processing apparatus may further include a plurality of lenses whose thicknesses gradually decrease in the traveling direction of the electron beam, at least one of the plurality of lenses being disposed in each of the first area and the second area.Type: ApplicationFiled: December 22, 2006Publication date: October 4, 2007Applicant: e-Beam CorporationInventors: Takashi Fuse, Tadashi Kotsugi, Kyo Tsuboi, Koji Takeya