Abstract: An insulating film which enables not only to obtain a good film quality but to achieve an excellent filling property, thick film formation and planarization simultaneously, an insulating film forming coating solution for forming the insulating film, and a method of manufacturing the insulating film are set forth. An insulating film forming coating solution containing as a main component a solution of a polymer obtained by co-hydrolysis of trialkoxysilane expressed by a general formula, SiH(OR)3, methyltrialkoxysilane expressed by a general formula, SiCH3(OR)3, and tetraalkoxysilane expressed by a general formula, Si(OR)4 is coated on a semiconductor substrate (1) having a step portion, and after it is dried and heated in an inert gas atmosphere, an insulating film (6) which is composed of a silane-derived compound expressed by a general formula, SiHx(CH3)yO2−(x+y)/2, where, 0<x<1, 0<y<1,x+y≦1 is formed.

Abstract: Aromatic aliphatic ether solvents, such as anisole, methylanisole, and phenetole, have been found useful in formulating coating solutions of polymeric dielectric materials and as a clean up solvent in the coating process. A process for forming a dielectric film on a substrate includes depositing a coating solution of a dielectric material in a formulation solvent onto a surface of the substrate and depositing an aromatic aliphatic ether solvent onto an edge portion of the surface of the substrate. The process is used to form films of dielectric materials including arylene ether dielectric polymers, hydridosiloxane resins, organohydridosiloxane resins, spin-on-glass materials, partially hydrolyzed and partially condensed alkoxysilane compositions which are cured to form a nanoporous dielectric silica material, and poly(perhydrido)silazanes.

Abstract: A wireless communication terminal including a wireless communication unit for receiving and transmitting voice signals between terminals connected through a voice channel and a data channel, a signal input/output unit for inputting and outputting voice signals for voice communication and a mixing unit, interposed between the wireless communication unit and signal input/output unit, for performing mixing operations to create a first mixed signal to be output to said signal input/output unit and second mixed signals each to be transmitted to the corresponding terminal. The wireless communication terminal is preferably used for wireless voice communication performed by three or more terminals without being interposed by a center apparatus (such as a server) or a repeater. Further, signal-receiving/transmitting is set for each wireless communication terminal whereupon convenience can be improved.

Abstract: A new processed steel sheet comprising of a steel base coated with a Zn or its alloy plating layer and a converted layer, which contains both of at least an insoluble or scarcely-soluble metal compound and at least a soluble metal compound. The insoluble or scarcely-soluble compound may be one or more of valve metal oxides or hydroxides, and the soluble compound may be one or more of valve metal fluorides. The converted layer may be also composed of one or more of complex compounds of Mn and Ti. The insoluble or scarcely-soluble compound acts as a barrier for insulation of a steel base from an atmosphere, while the soluble compound exhibits a self-repairing faculty to repair defective parts of the converted layer. Due to the converted layer, the processed steel sheet is remarkably improved in corrosion resistance, without the presence of chromium compounds which would put harmful influences on the environment.

Abstract: Aromatic aliphatic ether solvents, such as anisole, methylanisole, and phenetole, have been found useful in formulating coating solutions of polymeric dielectric materials and as a clean up solvent in the coating process. A process for forming a dielectric film on a substrate includes depositing a coating solution of a dielectric material in a formulation solvent onto a surface of the substrate and depositing an aromatic aliphatic ether solvent onto an edge portion of the surface of the substrate. The process is used to form films of dielectric materials including arylene ether dielectric polymers, hydridosiloxane resins, organohydridosiloxane resins, spin-on-glass materials, partially hydrolyzed and partially condensed alkoxysilane compositions which are cured to form a nanoporous dielectric silica material, and poly(perhydrido)silazanes.

Abstract: Aromatic aliphatic ether solvents, such as anisole, methylanisole, and phenetole, have been found useful in formulating coating solutions of polymeric dielectric materials and as a clean up solvent in the coating process. A process for forming a dielectric film on a substrate includes depositing a coating solution of a dielectric material in a formulation solvent onto a surface of the substrate and depositing an aromatic aliphatic ether solvent onto an edge portion of the surface of the substrate. The process is used to form films of dielectric materials including arylene ether dielectric polymers, hydridosiloxane resins, organohydridosiloxane resins, spin-on-glass materials, partially hydrolyzed and partially condensed alkoxysilane compositions which are cured to form a nanoporous dielectric silica material, and poly(perhydrido)silazanes.

Abstract: It is an object to provide an insulating film which enables not only to obtain a good film quality but to achieve an excellent filling property, thick film formation and planarization simultaneously, and to provide an insulating film forming coating solution for forming the insulating film, and to provide a method of manufacturing the insulating film.

Abstract: The present invention relates to a single-packaged epoxy resin coating composition comprising: (A) an epoxy resin having at least one epoxy group in a molecule and capable of being dissolved in the following organic solvent (D), (B) a ketimines compound having at least two primary amino groups blocked with a carbonyl compound and having no other amino groups than the above blocked amino groups, (C) a dehydrating agent and (D) an organic solvent, wherein the above organic solvent (D) comprises a hydrocarbon base solvent selected from the group consisting of an aliphatic hydrocarbon base solvent and an aromatic hydrocarbon base solvent having a boiling point of 148° C. or higher in a proportion of at least 95% by weight based on the above organic solvent (D).

Abstract: It is an object to provide an insulating film which enables not only to obtain a good film quality but to achieve an excellent filling property, thick film formation and planarization simultaneously, and to provide an insulating film forming coating solution for forming the insulating film, and to provide a method of manufacturing the insulating film. An insulating film forming coating solution containing as a main component a solution of a polymer obtained by co-hydrolysis of trialkoxysilane expressed by a general formula, SiH(OR)3, methyltrialkoxysilane expressed by a general formula, SiCH3(OR)3, and tetraalkoxysilane expressed by a general formula, Si(OR)4 is coated on a semiconductor substrate (1) having a step portion, and after it is heated and dried in an inert gas atmosphere, an insulating film (6) which is composed of a silane-derived compound expressed by a general formula, SiHx(CH3)yO2−(x+y)/2, where, 0<x<1, 0<y<1, x+y≦1 is formed.

Abstract: A new processed steel sheet comprises a steel base coated with a Zn or its alloy plating layer and a converted layer, which contains both of at least an insoluble or scarcely-soluble metal compound and at least a soluble metal compound. The insoluble or scarcely-soluble compound may be one ore more of valve metal oxides or hydroxides, and the soluble compound may be one or more of valve metal fluorides. The converted layer may be also composed of one ore more of complex compounds of Mn and Ti. The insoluble or scarcely-soluble compound acts as a barrier for insulation of a steel base from an atmosphere, while the soluble compound exhibits a self-repairing faculty to repair defective parts of the converted layer. Due to the converted layer, the processed steel sheet is remarkably improved in corrosion resistance, without presence of chromium compounds which would put harmful influences on the environment.

Abstract: Aromatic aliphatic ether solvents, such as anisole, methylanisole, and phenetole, have been found useful in formulating coating solutions of polymeric dielectric materials and as a clean up solvent in the coating process. A process for forming a dielectric film on a substrate includes depositing a coating solution of a dielectric material in a formulation solvent onto a surface of the substrate and depositing an aromatic aliphatic ether solvent onto an edge portion of the surface of the substrate. The process is used to form films of dielectric materials including arylene ether dielectric polymers, hydridosiloxane resins, organohydridosiloxane resins, spin-on-glass materials, partially hydrolyzed and partially condensed alkoxysilane compositions which are cured to form a nanoporous dielectric silica material, and poly(perhydrido)silazanes.

Abstract: The present invention provides a method for repair coating characterized by applying an epoxy-polyamine resin base coating composition comprising an epoxy resin having at least one epoxy resin in a molecule and an amine base curing agent as resinous components on a deteriorated coating film which is selected from a tar epoxy resin coating film, a tar urethane resin coating film, a modified epoxy resin coating film, a modified urethane resin coating film, an epoxy-polyamine resin coating film and an epoxy urethane resin coating film and which has a water content of 0.3 to 5% by weight.

Abstract: The present invention provides a coating composition capable of forming a coating film having good performances such as an adhesive property even if coated on a deteriorated coating film surface of a high rust-preventive coating film of a tar epoxy resin coating material and the like without providing pre-treatment, and a coating method thereof. The above coating composition is a coating composition of an organic solvent type or solventless type comprising an epoxy resin having at least one epoxy group in a molecule and an amine base curing agent as resin components, wherein moisture of 1 to 30 parts by weight per 100 parts by weight of the solid matter of the coating composition is contained.

Abstract: The present invention provides a method for repair coating characterized by applying an epoxy-polyamine resin base coating composition comprising an epoxy resin having at least one epoxy resin in a molecule and an amine base curing agent as resinous components on a deteriorated coating film which is selected from a tar epoxy resin coating film, a tar urethane resin coating film, a modified epoxy resin coating film, a modified urethane resin coating film, an epoxy-polyamine resin coating film and an epoxy urethane resin coating film and which has a water content of 0.3 to 5% by weight.

Abstract: A system to control a plurality of server computers as a group on a single client computer. An input/output (I/O) control system controls the command input/output from a plurality of consoles to a single server. The input/output control system controls the I/O status of the commands from each console to the server, and controls the I/O of commands from the various consoles based on the respective I/O statuses. A console display receives a message from a server and displays server console information in a manner identifiable from other server console information in response to the message received from the server.

Abstract: A metal interconnection is prepared by forming an underlying metal film of high melting point metal such as Ti and/or high melting point metal compound such as TiN layers above a semiconductor substrate, plasma etching the surface of the underlying metal film in a gas atmosphere containing chloride, and forming an interconnecting metal film such as Al, Cu, Au and Ag on the underlying metal film. Alternatively, a metal interconnection is prepared by forming an insulating film above a semiconductor substrate, forming connecting holes in the insulating film, forming an underlying metal film such as TiN on the insulating film and the bottom and side wall of the connection holes by a CVD process under controlled conditions, and forming an interconnecting metal film such as Al on the underlying metal film. The TiN film has (111) preferential orientation and the aluminum film has (111) preferential orientation, smooth surface and effective coverage.

Abstract: Processes for producing poly (hydrido siloxane) copolymers and processes for producing solutions of such copolymers for coating semiconductor substrates are provided. The copolymers have the general formula: (HSiO.sub.1.5).sub.a (HSiO(OR)).sub.b (SiO.sub.2).sub.c, wherein R is a mixture of H and an alkyl group having between 1 and 4 carbon atoms; a+b+c=1; 0.5<a<0.99; 0.01<b<0.5; and 0<c<0.5. Processes for producing the copolymers use alkoxysilanes as starting materials. Processes for producing coating solutions include removal of water and alcohol. Films of such coating solutions are useful as planarizing dielectric layers.

Abstract: A coating solution for forming an insulating film used in production of semiconductor devices includes siloxanes represented by a general formula:[SiR.sub.3 O.sub.1/2 ].sub.k [SiR.sub.2 O.sub.2/2 ].sub.l [SiRO.sub.3/2 ].sub.m [SiO.sub.4/2 ].sub.nwhere each of k, l, m and n is an integer, R may be the same or different and represents at least one organic group, and a ratio of (3k+21+m) to (k+l+m+n) is between about 0.8 and about 1.3. The present invention further relates to a method for preparing the coating solution, and a method for forming the insulating film using the coating solution, including the steps of coating the coating solution on a surface of a substrate of the semiconductor device to form a coated film, fluidizing the coated film at a temperature between about 150.degree. C. to about 300.degree. C. to planarize the surface of the substrate, and curing the fluidized coated film to form the insulating film.

Abstract: A metal interconnection is prepared by forming an underlying metal film of high melting point metal such as Ti and/or high melting point metal compound such as TiN layers above a semiconductor substrate, plasma etching the surface of the underlying metal film in a gas atmosphere containing chloride, and forming an interconnecting metal film such as Al, Cu, Au and Ag on the underlying metal film. Alternatively, a metal interconnection is prepared by forming an insulating film above a semiconductor substrate, forming connection holes in the insulating film, forming an underlying metal film such as TiN on the insulating film and the bottom and side wall of the connection holes by a CVD process under controlled conditions, and forming an interconnecting metal film such as Al on the underlying metal film. The TiN film has (111) preferential orientation and the aluminum film has (111) preferential orientation, smooth surface and effective coverage.

Abstract: A coating solution for forming an insulating film used in production of semiconductor devices includes siloxanes represented by a general formula:?SiR.sub.3 O.sub.1/2 !.sub.k ?SiR.sub.2 O.sub.2/2 !.sub.l ?SiRO.sub.3/2 !.sub.m ?SiO.sub.4/2 !.sub.nwhere each of k, l, m and n is an integer, R may be the same or different and represents at least one organic group, and a ratio of (3k+2l+m) to (k+l+m+n) is between about 0.8 and about 1.3. The present invention further relates to a method for preparing the coating solution, and a method for forming the insulating film using the coating solution, including the steps of coating the coating solution on a surface of a substrate of the semiconductor device to form a coated film, fluidizing the coated film at a temperature between about 150.degree. C. to about 300.degree. C. to planarize the surface of the substrate, and curing the fluidized coated film to form the insulating film.