Abstract: A method and instrument are provided for producing compound semiconductor crystallized ultrafine particles of Group II-VI or Groups III-V making use of a vapor phase reaction of an element of Group II or III with an element of Group IV or V. Also disclosed is a gain modulation type quantum box laser element of high performance constructed by geometrically disposing the ultrafine particles.

Abstract: The present invention provides a p-n junction type blue luminescence device forming a p-type hole injection layer and having high light-emission efficiency. On an n-conduction type ZnS substrate 111, there is formed a multiquantum well structure 112 alternately laminating a p-type ZnTe layer 112a and a non-doped ZnS layer 112b. And, a positive electrode 113 and a negative electrode 114 are provided on the multiquantum well structure 112 and the ZnS crystal, respectively. By applying forward bias voltage on this light-emitting device, electrons are injected from the n-type ZnS substrate to the multiquantum well structure 112. Then, these electrons are recombined with holes in the multiquantum well structure 112, so as to emit blue luminescence light. Thus, it becomes possible to easily and reproducibly obtain a p-conduction type hole injection layer so as to realize highly concentrated carrier injection and obtain high efficiency in emitting blue luminescence light.

Abstract: A method and instrument produce compound semiconductor crystallized ultrafine particles of Groups II-VI or Groups III-V using vapor phase reaction of an element of Group II or III with an element of Group V or VI. Charged ultrafine particles are transported by imposing a voltage onto a needle electrode, moving the needle electrode sufficiently close to the charged particles to electrostatically deposit the charged particles on the surface of the needle electrode, transporting the deposited particles to a position close to a desired location, and placing the charged particles on the desired location by either grounding the needle electrode or imposing a small reverse voltage on it. A gain modulation type quantum box laser element is constructed by geometrically disposing the ultrafine particles.

Abstract: Flatness of atomic-accuracy is achieved in an MBE epitaxial growth process by imparting kinetic energy to atoms absorbed on a substrate by means of irradiation by ion-beam for surface bombardment. Ion-beam surface bombardment may also be used for evaluation. The molecular-beam for epitaxial growth and the ion bombardment for surface energization and surface evaluation may all be operated in a pulse mode and synchronized so that evaluation and growth are conducted alternately while growth and energization are conducted simultaneously.

Abstract: A multi-tip field emission type electron source is fabricated by arranging a multiplicity of micro-size tips so as to be opposedly disposed to a laser active substance composed of an arbitrary semiconductor substance prepared on a conductive substrate, and the space between the two is sealed in vacuum, and the laser oscillation is excited by the electron beams induced by the electric field applied between the two, thereby realizing a solid laser in a simple manner of fabrication. In particular, the invention relates to blue and ultraviolet laser devices using II-VI compound such as ZnSe, or SiC, which were difficult in the prior art.

Abstract: Realized are a method and instrument for producing compound semiconductor crystallized ultrafine particles of Groups II-VI or Groups III-V making use of a vapor phase reaction of an element of Group II or III with an element of Group IV or V, and further a gain modulation type quantum box laser element of high performance constructed by geometrically disposing the ultrafine particles.