Abstract: The barrel type susceptor for use in the semiconductor epitaxial growth is characterized in that a face plate 5 of a susceptor main body 2 having the shape of a truncated cone is partitioned into two or more in a longitudinal direction thereof, each partition being provided with a wafer mounting concave portion 6a, 6b, 6c on which a wafer is laid, and the inclination angle ?a, ?b, ?c of a bottom face 6a1, 6b1, 6c1 of the concave portion for each partition to the vertical line is gradually decreased in each partition from the upper part to the lower part.

Abstract: A process simulation step supports manual artwork development planning for manual artwork development through simulation of processes from manual preparation request to delivery based on information entered by the requesting side. A preparation request step transmits a manual preparation request prepared by the requesting side to the developing side. A process management step accepts the preparation request, acquires an assigned number, and provides the progress status of processes from draft forwarding to artwork development and bookbinding in a visible manner on the developing side. An artwork development step prepares artwork by way of receipt of draft from the requesting side, and editing, proofreading and technical check on the developing and requesting sides. A bookbinding/distribution step handles manual bookbinding and/or recording to an electronified medium based on the prepared artwork.

Abstract: A plurality of servers are interconnected via a network. A storage device stores information. In a registration information DB, meta data which represents the attribute of the information stored in the storage device is registered. This meta data is broadcast to other servers. A query statement input for information search is transferred to an appropriate server based on the meta data received form other server. An agent that receives the query statement extracts the corresponding information from the storage device according to the meta data registered to the registration information DB, and provides the extracted information to a client.

Abstract: On the part of a designer, a super class having a code name generally indicating classes in a class group having a structured knowledge structure, is generated. By referring to the super class, the relationship in the class group can be inferred and associated by multivalued logic. If possible, a new class is generated by the inference using multivalued logic. On the part of a user, in addition to a class group indicating the knowledge structure generated on the part of the designer and the relationship among them, an inference is uniquely made by multivalued logic, the relationship among the class group is restructured, and a knowledge structure described as the relationship between classes is used.

Abstract: Disclosed is a document review apparatus which efficiently carries out document review by using a network. A document review apparatus comprises a memory unit which stores a reviewed form comprising a written document, contents thereof to be reviewed by a plurality of reviewers. The document review apparatus receives a response, comprising information holding a review result of the reviewed form from another apparatus, and stores it in the memory unit; when a predetermined number of responses have been stored, the document review apparatus creates statistical data relating to the contents of the responses, and displays the created statistical data in order to assist a user (the creator of the reviewed form) in revising the reviewed form.

Abstract: A name obtaining unit obtains name information. An ontology generating unit sets a specific element from an installation space where each element to be given a name is hierarchically expressed, generates an ontology as a group of name candidates with the set element as a top level based on the name information, and links each name constituting the ontology with multimedia information. The ontology generating unit registers the linked multimedia information at a multimedia information database.

Abstract: The invention provides an acoustic cooling system with a noise reduction function of the type wherein a driving condition of a sound source used in the acoustic cooling system is controlled to compress coolant by a sound wave and a cooling object is cooled making use of an endothermic action of the coolant when the compressed coolant is expanded and which can reduce noise produced from the sound source effectively.

Abstract: The system comprises the XML database that stores an electronic examination document, another database that stores attribute information of examiners and repliers for examining the examination document, and the main controller which allows the examination requester to select the examiner or replier on the basis of the attribute information of examiners and repliers, and requesting examination of the examination document to the selected examiner or replier through the Internet.

Abstract: A digital document discussion apparatus includes a user profile information database storing user profile information on a user, a responsible organization profile information database storing responsible organization profile information, and a control section providing a template to a discussion requester by a frame with a work process, the user profile information and the responsible organization profile information corresponding to a digitized discussion document used as keys, allowing the discussion document to be created based on this template, and requesting the discussion participant to discuss the created discussion document.

Abstract: A method of chemically growing a thin film in a gas phase using a rotary gaseous phase thin film growth apparatus which feeds a material gas by flowing down the gas from above to a surface of a rotating silicon semiconductor substrate to grow a thin film on a surface of said silicon semiconductor substrate in a method of chemically growing a thin film that a thin film-growing reaction is done wherein: monosilane gas is used as an effective component of the material gas to grow the thin film under a reduced pressure of from 2.7×102 to 6.7×103 Pa with the number of rotations of said silicon semiconductor substrate being from 500 to 2000 min−1 and at a reaction temperature of from 600° C. to 800° C.

Abstract: A wafer transfer method, by which, when a wafer is loaded into a system, heat shock applied to the wafer can be relieved, the frequency of occurrence of crystal dislocation such as slip can be decreased, and productivity can be improved due to saving of energy and time required for heating and cooling of the system, and there is also provided a wafer support member used for this method. In this method, a step for transferring wafers so as to replace a wafer, which finishes its thin film growth process, with a following wafer, which is to be subjected to its thin film growth process, is carried out under the temperature being higher than the room temperature, while the wafer 1 is transferred integrally with a wafer support member 2 used for the thin film growth process.

Abstract: There is provided a wafer transfer method, by which, when a wafer is loaded into a system, heat shock applied to the wafer can be relieved, the frequency of occurrence of crystal dislocation such as slip can be decreased, and productivity can be improved due to saving of energy and time required for heating and cooling of the system, and there is also provided a wafer support member used for this method. In this method, a step for transferring wafers so as to replace a wafer, which finishes its thin film growth process, with a following wafer, which is to be subjected to its thin film growth process, is carried out under the temperature being higher than the room temperature, while the wafer 1 is transferred integrally with a wafer support member 2 used for the thin film growth process.

Abstract: An apparatus for reduced-pressure gaseous phase epitaxial growth by suppressing contamination upon the machine parts constituting the rotary mechanical portion and suppressing contamination upon the semiconductor wafer by maintaining the pressure in the rotary mechanical portion to lie within a particular range, and a method of controlling the above apparatus.

Abstract: A method of controlling the temperature of a semiconductor substrate for prevention of any cracks from being formed in the semiconductor substrate event though semiconductors having different temperature rise/fall characteristics are fed into a reactor in which each semiconductor substrates is subjected to an oxidation, diffusion, or a chemical vapor deposition process. The temperatures are measured at various points in the semiconductor substrates in the heated reactor; the temperature rise/fall characteristic thereof is determined by computing the rate of temperature rise and the in-plane temperature distribution out of the measured values; a temperature control program adaptable for said temperature rise/fall characteristic is automatically selected out of a plurality of temperature control programs written in advance; the semiconductor substrate is controlled on the basis of the selected temperature control program.

Abstract: A client terminal in the information collecting apparatus collects a Web information described in hyper text language form a Web server terminal via the Internet. This client terminal starts up a browser and previously sets a flag at a target data cell in the collected Web information. The client terminal first automatically collects the latest Web information when the time in the timer reaches a prespecified time by utilizing a program for data transfer without starting up the browser, and then collects a latest data cell corresponding to the data cell for which a flag has been set.

Abstract: A method of chemically growing a thin film in a gas phase using a rotary gaseous phase thin film growth apparatus which feeds a material gas by flowing down the gas from above to a surface of a rotating silicon semiconductor substrate to grow a thin film on a surface of said silicon semiconductor substrate in a method of chemically growing a thin film that a thin film-growing reaction is done wherein: monosilane gas is used as an effective component of the material gas to grow the thin film under a reduced pressure of from 2.7×102 to 6.7×103 Pa with the number of rotations of said silicon semiconductor substrate being from 500 to 2000 min−1 and at a reaction temperature of from 600° C. to 800° C.

Abstract: In an information retrieving system, an index server is provided to retrieve design/manufacturing information registered in a plurality of web servers. A register processing agent delivers an abstract and storage location information of registered information of each web server, to a registration accept processing agent.

Abstract: An improved method of growing a thin film in gaseous phase maintaining a uniform thickness and uniform electric properties such as resistivity, etc. over the whole surface of the film, and an apparatus for growing a thin film in gaseous phase adapted to conducting the above method.

Abstract: An apparatus for reduced-pressure gaseous phase epitaxial growth by suppressing contamination upon the machine parts constituting the rotary mechanical portion and suppressing contamination upon the semiconductor wafer by maintaining the pressure in the rotary mechanical portion to lie within a particular range, and a method of controlling the above apparatus.

Abstract: A document management apparatus having a constitution for periodically checking whether the attribute information in a document managed by a user conflicts with master information of the attribute information managed by a Personnel server or Enterprise-Department servers or not, and changing the attribute information in the document to the attribute information in the servers when both of the information conflict with each other.