Patents by Inventor Tadayoshi Kawaguchi
Tadayoshi Kawaguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11094509Abstract: The features of the present invention are that a plasma processing apparatus includes: a process chamber in which a sample is plasma-processed; a dielectric window which airtightly seals an upper part of the process chamber; an inductive antenna which is disposed at an upper part of the dielectric window and forms an induction magnetic field; a radio frequency power source which supplies radio frequency power to the inductive antenna; and a Faraday shield to which radio frequency power is supplied from the radio frequency power source and which is disposed between the dielectric window and the inductive antenna, and the plasma processing apparatus further includes a monitoring unit which monitors a current flowing in the Faraday shield and a control unit which controls the monitored current.Type: GrantFiled: February 20, 2017Date of Patent: August 17, 2021Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Makoto Satake, Kenetsu Yokogawa, Tadayoshi Kawaguchi, Takamasa Ichino
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Patent number: 10998168Abstract: In a plasma processing apparatus that can adjust an induction magnetic field distribution of power feeding sections of an induction coil, correct a plasma distribution on a specimen, and apply uniform plasma processing to the specimen, the specimen is subjected to plasma processing, a dielectric window that forms the upper surface of the vacuum processing chamber, a gas lead-in section that leads gas into the vacuum processing chamber, a specimen table that is arranged in the vacuum processing chamber and on which the specimen is placed, an induction coil provided above the dielectric window, and a radio-frequency power supply that supplies radio-frequency power to the induction coil. The plasma processing apparatus includes a flat conductor arranged below the induction coil. The induction coil includes crossing power feeding sections. The conductor is arranged below the power feeding sections.Type: GrantFiled: October 31, 2019Date of Patent: May 4, 2021Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Yusaku Sakka, Ryoji Nishio, Tadayoshi Kawaguchi
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Patent number: 10796884Abstract: A plasma processing device includes a processing chamber for generating a plasma, a vacuum window that constitutes a part of a wall of the processing chamber, induction antennas including at least two systems for generating plasma in the processing chamber, radio frequency power sources for applying the current independently to the respective induction antennas, and a controller including phase circuits for controlling the phase of the current of the radio frequency power sources of the respective systems or the current value over time, and a control unit. The controller sequentially time modulates the phase difference between currents flowing to the systems or the current value within a sample processing period to move the plasma generation position so as to make the ion incident angle to the wafer uniform in the wafer plane.Type: GrantFiled: February 17, 2014Date of Patent: October 6, 2020Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Tsutomu Tetsuka, Makoto Satake, Tadayoshi Kawaguchi
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Publication number: 20200066487Abstract: In a plasma processing apparatus that can adjust an induction magnetic field distribution of power feeding sections of an induction coil, correct a plasma distribution on a specimen, and apply uniform plasma processing to the specimen, the specimen is subjected to plasma processing, a dielectric window that forms the upper surface of the vacuum processing chamber, a gas lead-in section that leads gas into the vacuum processing chamber, a specimen table that is arranged in the vacuum processing chamber and on which the specimen is placed, an induction coil provided above the dielectric window, and a radio-frequency power supply that supplies radio-frequency power to the induction coil. The plasma processing apparatus includes a flat conductor arranged below the induction coil. The induction coil includes crossing power feeding sections. The conductor is arranged below the power feeding sections.Type: ApplicationFiled: October 31, 2019Publication date: February 27, 2020Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Yusaku Sakka, Ryoji Nishio, Tadayoshi Kawaguchi
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Patent number: 10541115Abstract: In a plasma processing apparatus that can adjust an induction magnetic field distribution of power feeding sections of an induction coil, correct a plasma distribution on a specimen, and apply uniform plasma processing to the specimen, the specimen is subjected to plasma processing, a dielectric window that forms the upper surface of the vacuum processing chamber, a gas lead-in section that leads gas into the vacuum processing chamber, a specimen table that is arranged in the vacuum processing chamber and on which the specimen is placed, an induction coil provided above the dielectric window, and a radio-frequency power supply that supplies radio-frequency power to the induction coil. The plasma processing apparatus includes a flat conductor arranged below the induction coil. The induction coil includes crossing power feeding sections. The conductor is arranged below the power feeding sections.Type: GrantFiled: February 1, 2012Date of Patent: January 21, 2020Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Yusaku Sakka, Ryoji Nishio, Tadayoshi Kawaguchi
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Patent number: 10229813Abstract: In a plasma processing apparatus including a processing chamber, a dielectric window for hermetically sealing the upper portion of the processing chamber, an induction antenna deployed above the dielectric window, a Faraday shield unit, and a control apparatus for controlling a first radio-frequency power source for supplying a radio-frequency power to the induction antenna, and a second radio-frequency power source for supplying a radio-frequency power to the Faraday shield unit, the Faraday shield unit includes a first Faraday shield having a first element, and a second Faraday shield having a second element deployed at a position adjacent to the first element, the control apparatus applying a time modulation to the radio-frequency powers that are respectively supplied to the first element and the second element, the phase of the first-element-supplied and time-modulated radio-frequency power being different from the phase of the second-element-supplied and time-modulated radio-frequency power.Type: GrantFiled: July 30, 2014Date of Patent: March 12, 2019Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Tadayoshi Kawaguchi, Ryoji Nishio, Tsutomu Tetsuka
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Publication number: 20180068835Abstract: The features of the present invention are that a plasma processing apparatus includes: a process chamber in which a sample is plasma-processed; a dielectric window which airtightly seals an upper part of the process chamber; an inductive antenna which is disposed at an upper part of the dielectric window and forms an induction magnetic field; a radio frequency power source which supplies radio frequency power to the inductive antenna; and a Faraday shield to which radio frequency power is supplied from the radio frequency power source and which is disposed between the dielectric window and the inductive antenna, and the plasma processing apparatus further includes a monitoring unit which monitors a current flowing in the Faraday shield and a control unit which controls the monitored current.Type: ApplicationFiled: February 20, 2017Publication date: March 8, 2018Inventors: Makoto SATAKE, Kenetsu YOKOGAWA, Tadayoshi KAWAGUCHI, Takamasa ICHINO
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Publication number: 20150311040Abstract: In a plasma processing apparatus including a processing chamber, a dielectric window for hermetically sealing the upper portion of the processing chamber, an induction antenna deployed above the dielectric window, a Faraday shield unit, and a control apparatus for controlling a first radio-frequency power source for supplying a radio-frequency power to the induction antenna, and a second radio-frequency power source for supplying a radio-frequency power to the Faraday shield unit, the Faraday shield unit includes a first Faraday shield having a first element, and a second Faraday shield having a second element deployed at a position adjacent to the first element, the control apparatus applying a time modulation to the radio-frequency powers that are respectively supplied to the first element and the second element, the phase of the first-element-supplied and time-modulated radio-frequency power being different from the phase of the second-element-supplied and time-modulated radio-frequency power.Type: ApplicationFiled: July 30, 2014Publication date: October 29, 2015Inventors: TADAYOSHI KAWAGUCHI, RYOJI NISHIO, TSUTOMU TETSUKA
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Patent number: 9039865Abstract: The invention provides a plasma processing apparatus in which ring-like conductors 8a and 8b are arranged closed to and along an induction antenna 1 composed of an inner circumference coil 1a and an outer circumference coil 1b. Ring-like conductors 8a and 8b are each characterized in that the radius from the center of the apparatus and the cross-sectional shape of the conductor body varies along the circumferential angle of the coils. Since the mutual inductances between the ring-like conductors 8a and 8b and the induction antenna 1 and between the ring-like conductors 8a and 8b and the plasma along the circumferential position are controlled, it becomes possible to compensate for the coil currents varied along the circumference of the coils of the induction antenna 1, and to improve the non-uniformity in the circumferential direction of the current in the generated plasma.Type: GrantFiled: January 27, 2010Date of Patent: May 26, 2015Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Ken Yoshioka, Motohiko Yoshigai, Ryoji Nishio, Tadayoshi Kawaguchi
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Publication number: 20150068681Abstract: A plasma processing device includes a processing chamber for generating a plasma, a vacuum window that constitutes a part of a wall of the processing chamber, induction antennas including at least two systems for generating plasma in the processing chamber, radio frequency power sources for applying the current independently to the respective induction antennas, and a controller including phase circuits for controlling the phase of the current of the radio frequency power sources of the respective systems or the current value over time, and a control unit. The controller sequentially time modulates the phase difference between currents flowing to the systems or the current value within a sample processing period to move the plasma generation position so as to make the ion incident angle to the wafer uniform in the wafer plane.Type: ApplicationFiled: February 17, 2014Publication date: March 12, 2015Inventors: Tsutomu Tetsuka, Makoto Satake, Tadayoshi Kawaguchi
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Publication number: 20130299091Abstract: A plasma processing apparatus includes a processing chamber, a flat-plate-like dielectric window, an induction coil, a flat electrode, a RF power source, a gas supply unit, and a sample stage on which a sample is mounted. A process gas supply plate is provided opposite the dielectric window on an inner side of the processing chamber, and a recess portion is formed in the flat electrode on a side opposite the induction coil corresponding to a gas supply position of the process gas supply plate.Type: ApplicationFiled: January 17, 2013Publication date: November 14, 2013Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Yusaku SAKKA, Ryoji NISHIO, Tadayoshi KAWAGUCHI, Tsutomu TETSUKA
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Publication number: 20130160949Abstract: A plasma processing apparatus which includes a plasma processing chamber for plasma-processing a sample, an induction antenna disposed outside the plasma processing chamber, a radio-frequency power supply for supplying radio-frequency power to the induction antenna, and a unit for controlling electrostatic capacity including a Faraday shield capacitively coupled with plasma and a dielectric window allowing an induction magnetic field to transmit into the plasma processing chamber is provided; electrostatic capacity between the Faraday shield and the dielectric window at a center portion and electrostatic capacity between the Faraday shield and the dielectric window at an edge portion are controlled.Type: ApplicationFiled: August 9, 2012Publication date: June 27, 2013Inventors: Yusaku SAKKA, Ryoji NISHIO, Tadayoshi KAWAGUCHI
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Publication number: 20130087288Abstract: In a plasma processing apparatus that can adjust an induction magnetic field distribution of power feeding sections of an induction coil, correct a plasma distribution on a specimen, and apply uniform plasma processing to the specimen, the specimen is subjected to plasma processing, a dielectric window that forms the upper surface of the vacuum processing chamber, a gas lead-in section that leads gas into the vacuum processing chamber, a specimen table that is arranged in the vacuum processing chamber and on which the specimen is placed, an induction coil provided above the dielectric window, and a radio-frequency power supply that supplies radio-frequency power to the induction coil. The plasma processing apparatus includes a flat conductor arranged below the induction coil. The induction coil includes crossing power feeding sections. The conductor is arranged below the power feeding sections.Type: ApplicationFiled: February 1, 2012Publication date: April 11, 2013Inventors: Yusaku SAKKA, Ryoji Nishio, Tadayoshi Kawaguchi
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Publication number: 20120267050Abstract: A uniform plasma processing to a sample is performed by adjusting the distribution of the induced magnetic field in an inductively-coupled-plasma processing apparatus and correcting the plasma distribution on the sample. Between an induction coil and a dielectric window a conductor is provided along the induction coil and side by side with at least a part of the induction coil in its circumferential direction. The conductor is set up at a location where the intensity of the induced magnetic field generated from the induction coil is wished to be weakened and the relationship of Lp?Lr is satisfied, letting the shortest distance from the induction coil to the surface of the conductor be Lr and letting the shortest distance from the induction coil to the plasma generated directly under the dielectric window be Lp.Type: ApplicationFiled: July 26, 2011Publication date: October 25, 2012Inventors: Yusaku SAKKA, Ryoji Nishio, Tadayoshi Kawaguchi
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Publication number: 20120138229Abstract: The invention provides a plasma processing apparatus having a means for generating a plasma capable of correcting the eccentricity of the plasma diffused above the wafer caused by magnetic field or by vacuum eccentricity, comprising a vacuum processing chamber in which a sample is processed via plasma, a gas supply means for supplying gas into the vacuum processing chamber, a sample stage disposed within the vacuum processing chamber on which the sample is placed, an induction coil disposed outside the vacuum processing chamber, a radio frequency power supply for supplying radio frequency power to the induction coil, a Faraday shield being capacitively coupled with the plasma, and an eccentricity correction means disposed between the induction coil and a dielectric sealing window constituting an upper surface of the vacuum processing chamber, wherein the eccentricity correction means generates a plasma capable of correcting the eccentricity of the plasma.Type: ApplicationFiled: February 4, 2011Publication date: June 7, 2012Inventors: Yusaku SAKKA, Ryoji NISHIO, Tadayoshi KAWAGUCHI
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Publication number: 20110108194Abstract: The invention provides a plasma processing apparatus in which ring-like conductors 8a and 8b are arranged closed to and along an induction antenna 1 composed of an inner circumference coil 1a and an outer circumference coil 1b. Ring-like conductors 8a and 8b are each characterized in that the radius from the center of the apparatus and the cross-sectional shape of the conductor body varies along the circumferential angle of the coils. Since the mutual inductances between the ring-like conductors 8a and 8b and the induction antenna 1 and between the ring-like conductors 8a and 8b and the plasma along the circumferential position are controlled, it becomes possible to compensate for the coil currents varied along the circumference of the coils of the induction antenna 1, and to improve the non-uniformity in the circumferential direction of the current in the generated plasma.Type: ApplicationFiled: January 27, 2010Publication date: May 12, 2011Inventors: Ken YOSHIOKA, Motohiko Yoshigai, Ryoji Nishio, Tadayoshi Kawaguchi
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Publication number: 20080236494Abstract: A plasma processing apparatus, comprising: a processing chamber arranged within a vacuum vessel; a sample table arranged within the processing chamber on which a sample to be processed is placed; electric field supplying means for supplying an electric field to form plasma within the processing chamber; a plate member formed of a dielectric material for constituting a ceiling plane of the processing chamber and transmitting the electric field; a cover member formed of a dielectric material for constituting a part of a side wall for the entire circumference of the processing chamber, facing the plasma, and propagating the electric field radiated from the plate member; and a conductive member internally arranged for almost the entire circumference of the cover member.Type: ApplicationFiled: August 9, 2007Publication date: October 2, 2008Inventors: TADAYOSHI KAWAGUCHI, Muneo Furuse
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Publication number: 20080236744Abstract: To provide a plasma processing equipment that can reduce the particles or contamination in a sample by suppressing the occurrence of an abnormal electric discharge during processing. The plasma processing equipment that employs a plasma process using a halogen-based gas in fabricating a semiconductor device, wherein a plasma sprayed coating film is applied to a surface of a well, such as a wall in a processing chamber, which plasma is in constant with, and wherein a conductor is incorporated into a material of this plasma sprayed coating film, thereby making the plasma sprayed coating film conductive.Type: ApplicationFiled: August 30, 2007Publication date: October 2, 2008Inventors: Muneo Furuse, Shingo Kimura, Tadayoshi Kawaguchi
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Publication number: 20080180030Abstract: A plasma processing apparatus includes a vacuum container, a processing chamber arranged in the vacuum container and supplied with a processing gas, a holding electrode arranged in the processing chamber for holding a sample to be processed, on the upper surface thereof, an electric field supply unit for supplying an electric field and a magnetic field supply unit for supplying a magnetic field to form the plasma in the space above the holding electrode in the processing chamber, and a grounded wall member making up the inner wall, substantially in the shape of a truncated cone, of the processing chamber above the holding electrode.Type: ApplicationFiled: February 28, 2007Publication date: July 31, 2008Inventors: Tsutomu Tetsuka, Tadayoshi Kawaguchi
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Publication number: 20070215278Abstract: A plasma etching apparatus is provided which can prevent corrosion of an aluminum substrate constituting an etching processing chamber or an inside component thereof, thereby avoiding a reduction in productivity due to scattering of a sprayed coating. In the plasma etching apparatus, an anodic oxide film is disposed between a ceramic sprayed coating with excellent resistance to plasma, and the etching processing chamber and the inside component thereof made of aluminum alloy. The anodic oxide film has a thickness of 5 ?m or less to have heat resistance.Type: ApplicationFiled: March 6, 2006Publication date: September 20, 2007Inventors: Muneo Furuse, Masanori Kadotani, Katsuji Matano, Tadayoshi Kawaguchi, Masatsugu Arai