Patents by Inventor Tadayuki Hanamoto
Tadayuki Hanamoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7918934Abstract: A single crystal semiconductor manufacturing apparatus in which the concentration of oxygen in a single crystal semiconductor is controlled while pulling up a single crystal semiconductor such as single crystal silicon by the CZ method, a single crystal semiconductor manufacturing method, and a single crystal ingot manufactured by the method are disclosed. The natural convection (20) in the melt (5) in a quartz crucible (3) is controlled by regulating the temperatures at a plurality of parts of the melt (5). A single crystal semiconductor (6) can have a desired diameter by regulating the amount of heat produced by heating means (9a) on the upper side. Further the ratio between the amount of heat produced by the upper-side heating means (9a) and that by the lower-side heating means (9b) is adjusted to vary the process condition. In the adjustment, the amount of heat produced by the lower-side heating means (9b) is controlled to a relatively large proportion.Type: GrantFiled: November 29, 2006Date of Patent: April 5, 2011Assignee: Sumco Techxiv CorporationInventors: Yutaka Shiraishi, Jyunsuke Tomioka, Takuji Okumura, Tadayuki Hanamoto, Takehiro Komatsu, Shigeo Morimoto
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Patent number: 7727334Abstract: In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.Type: GrantFiled: May 31, 2007Date of Patent: June 1, 2010Assignee: Sumco Techxiv CorporationInventors: Hiroshi Inagaki, Shigeki Kawashima, Makoto Kamogawa, Toshirou Kotooka, Toshiaki Saishoji, Daisuke Ebi, Kentaro Nakamura, Kengo Hayashi, Yoshinobu Hiraishi, Shigeo Morimoto, Hiroshi Monden, Tadayuki Hanamoto, Tadashi Hata
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Publication number: 20090173272Abstract: In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.Type: ApplicationFiled: December 23, 2008Publication date: July 9, 2009Applicant: KOMATSU DENSHI KINOZOKU KABUSHIKI KAISHAInventors: Hiroshi Inagaki, Shigeki Kawashima, Makoto Kamogawa, Toshirou Kotooka, Toshiaki Saishoji, Daisuke Ebi, Kentaro Nakamura, Kengo Hayashi, Yoshinobu Hiraishi, Shigeo Morimoto, Hiroshi Monden, Tadayuki Hanamoto, Tadashi Hata
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Publication number: 20080311019Abstract: In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.Type: ApplicationFiled: October 31, 2007Publication date: December 18, 2008Applicant: Komatsu Denshi Kinzoku Kabushiki KaishaInventors: Hiroshi Inagaki, Shigeki Kawashima, Makoto Kamogawa, Toshirou Kotooka, Toshiaki Saishoji, Daisuke Ebi, Kentaro Nakamura, Kengo Hayashi, Yoshinobu Hiraishi, Shigeo Morimoto, Hiroshi Monden, Tadayuki Hanamoto, Tadashi Hata
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Publication number: 20080311021Abstract: In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.Type: ApplicationFiled: October 31, 2007Publication date: December 18, 2008Applicant: Komatsu Denshi Kinzoku Kabushiki KaishaInventors: Hiroshi Inagaki, Shigeki Kawashima, Makoto Kamogawa, Toshirou Kotooka, Toshiaki Saishoji, Daisuke Ebi, Kentaro Nakamura, Kengo Hayashi, Yoshinobu Hiraishi, Shigeo Morimoto, Hiroshi Monden, Tadayuki Hanamoto, Tadashi Hata
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Publication number: 20070256625Abstract: In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends,there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.Type: ApplicationFiled: May 31, 2007Publication date: November 8, 2007Applicant: Komatsu Denshi Kinzoku Kabushiki KaishaInventors: Hiroshi Inagaki, Shigeki Kawashima, Makoto Kamogawa, Toshirou Kotooka, Toshiaki Saishoji, Daisuke Ebi, Kentaro Nakamura, Kengo Hayashi, Yoshinobu Hiraishi, Shigeo Morimoto, Hiroshi Monden, Tadayuki Hanamoto, Tadashi Hata
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Publication number: 20070068448Abstract: A single crystal semiconductor manufacturing apparatus in which the concentration of oxygen in a single crystal semiconductor is controlled while pulling up a single crystal semiconductor such as single crystal silicon by the CZ method, a single crystal semiconductor manufacturing method, and a single crystal ingot manufactured by the method are disclosed. The natural convection (20) in the melt (5) in a quartz crucible (3) is controlled by regulating the temperatures at a plurality of parts of the melt (5). A single crystal semiconductor (6) can have a desired diameter by regulating the amount of heat produced by heating means (9a) on the upper side. Further the ratio between the amount of heat produced by the upper-side heating means (9a) and that by the lower-side heating means (9b) is adjusted to vary the process condition. In the adjustment, the amount of heat produced by the lower-side heating means (9b) is controlled to a relatively large proportion.Type: ApplicationFiled: November 29, 2006Publication date: March 29, 2007Applicant: Komatsu Denshi Kinzoku Kabushiki KaishaInventors: Yutaka Shiraishi, Jyunsuke Tomioka, Takuji Okumura, Tadayuki Hanamoto, Takehiro Komatsu, Shigeo Morimoto
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Patent number: 7160386Abstract: A single crystal semiconductor manufacturing apparatus in which the concentration of oxygen in a single crystal semiconductor is controlled while pulling up a single crystal semiconductor such as single crystal silicon by the CZ method, a single crystal semiconductor manufacturing method, and a single crystal ingot manufactured by the method are disclosed. The natural convection (20) in the melt (5) in a quartz crucible (3) is controlled by regulating the temperatures at a plurality of parts of the melt (5). A single crystal semiconductor (6) can have a desired diameter by regulating the amount of heat produced by heating means (9a) on the upper side. Further the ratio between the amount of heat produced by the upper-side heating means (9a) and that by the lower-side heating means (9b) is adjusted to vary the process condition. In the adjustment, the amount of heat produced by the lower-side heating means (9b) is controlled to a relatively large proportion.Type: GrantFiled: September 27, 2002Date of Patent: January 9, 2007Assignee: Komatsu Denshi Kinzoku Kabushiki KaishaInventors: Yutaka Shiraishi, Jyunsuke Tomioka, Takuji Okumura, Tadayuki Hanamoto, Takehiro Komatsu, Shigeo Morimoto
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Patent number: 6994748Abstract: A melt level or the gap between a melt surface and a heat shield is measured accurately irrespective of how the melt surface is. A laser beam from a range-finding unit is reflected by a scanning mirror and projected on a melt surface through an entrance window and a quartz prism in a chamber of a puller. After specular reflection, the beam forms a measurement spot in the bottom of a heat shield and scatters. Part of the scatter, after specular reflection at the melt surface (secondary reflection), passes through the prism, the entrance window and the scanning mirror to the range-finding unit. The range-finding unit carries out triangulation using the distance between a laser source and a photodetector therein, and the angle of incidence and the angle of the received laser beam.Type: GrantFiled: May 1, 2001Date of Patent: February 7, 2006Assignee: Komatsu Denshi Kinzoku Kabushiki KaishaInventors: Masato Moriya, Tadayuki Hanamoto, Hiroshi Monden, Toshio Hayashida, Toshirou Kotooka
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Patent number: 6977010Abstract: In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.Type: GrantFiled: January 7, 2003Date of Patent: December 20, 2005Assignee: Komatsu Denshi Kinzoku Kabushiki KaishaInventors: Hiroshi Inagaki, Shigeki Kawashima, Makoto Kamogawa, Toshirou Kotooka, Toshiaki Saishoji, Daisuke Ebi, Kentaro Nakamura, Kengo Hayashi, Yoshinobu Hiraishi, Shigeo Morimoto, Hiroshi Monden, Tadayuki Hanamoto, Tadashi Hata
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Publication number: 20050268840Abstract: In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.Type: ApplicationFiled: June 7, 2005Publication date: December 8, 2005Applicant: Komatsu Denshi Kinzoku Kabushiki KaishaInventors: Hiroshi Inagaki, Shigeki Kawashima, Makoto Kamogawa, Toshirou Kotooka, Toshiaki Saishoji, Daisuke Ebi, Kentaro Nakamura, Kengo Hayashi, Yoshinobu Hiraishi, Shigeo Morimoto, Hiroshi Monden, Tadayuki Hanamoto, Tadashi Hata
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Publication number: 20040211359Abstract: A single crystal semiconductor manufacturing apparatus in which the concentration of oxygen in a single crystal semiconductor is controlled while pulling up a single crystal semiconductor such as single crystal silicon by the CZ method, a single crystal semiconductor manufacturing method, and a single crystal ingot manufactured by the method are disclosed. The natural convection (20) in the melt (5) in a quartz crucible (3) is controlled by regulating the temperatures at a plurality of parts of the melt (5). A single crystal semiconductor (6) can have a desired diameter by regulating the amount of heat produced by heating means (9a) on the upper side. Further the ratio between the amount of heat produced by the upper-side heating means (9a) and that by the lower-side heating means (9b) is adjusted to vary the process condition. In the adjustment, the amount of heat produced by the lower-side heating means (9b) is controlled to a relatively large proportion.Type: ApplicationFiled: February 20, 2004Publication date: October 28, 2004Inventors: Yutaka Shiraishi, Jyunsuke Tomioka, Takuji Okumura, Tadayuki Hanamoto, Takehiro Komatsu, Shigeo Morimoto
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Publication number: 20030154907Abstract: In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.Type: ApplicationFiled: January 7, 2003Publication date: August 21, 2003Applicant: Komatsu Denshi Kinzoku Kabushiki KaishaInventors: Hiroshi Inagaki, Shigeki Kawashima, Makoto Kamogawa, Toshirou Kotooka, Toshiaki Saishoji, Daisuke Ebi, Kentaro Nakamura, Kengo Hayashi, Yoshinobu Hiraishi, Shigeo Morimoto, Hiroshi Monden, Tadayuki Hanamoto, Tadashi Hata
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Patent number: 6572699Abstract: A melt level detector is provided for detecting the melt level of a CZ furnace by triangulation. The laser beam (2) from a laser source (1) is moved in radial directions of a crucible (14) in the CZ furnace to find a location where a photodetector system (5, 7) can receive the reflection (4) from the melt level (3), and the laser beam (2) is fixed at the location. Since the measurements thus take place within an extremely small angular range of the laser beam, the melt level (3) can be detected with little effect of noise on the melt level (3) while eliminating complexity of the device.Type: GrantFiled: September 14, 2001Date of Patent: June 3, 2003Assignee: Komatsu Denshi Kinzoku Kabushiki KaishaInventors: Masato Moriya, Tadayuki Hanamoto, Kazuhiro Mimura, Toshirou Kotooka
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Publication number: 20020144641Abstract: In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.Type: ApplicationFiled: February 1, 2001Publication date: October 10, 2002Inventors: Hiroshi Inagaki, Shigeki Kawashima, Makoto Kamogawa, Toshire Kotooka, Toshiaki Saishoji, Daisuke Ebi, Kentarou Nakamura, Kengo Hayashi, Yoshinobu Hiraishi, Shigeo Morimoto, Hiroshi Monden, Tadayuki Hanamoto, Tadashi Hata
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Patent number: 6458203Abstract: There are provided a CZ system for manufacturing a single-crystal ingot, which produces a perfect crystal with good reproducibility through growth of a single-crystal ingot, as well as a method of manufacturing the single-crystal ingot. A system of manufacturing a single-crystal ingot by pulling a single-crystal ingot from molten raw material by means of a Czochralski technique, the system including measurement means for measuring the distance between the level of molten raw material and the bottom of a heat-shielding member. On the basis of the thus-measured distance, the temperature gradient of area G1 of the single-crystal pulled silicon ingot is controlled so as to produce a perfect crystal with good reproducibility, by means of controlling any factor for pulling a single-crystal silicon ingot selected from the group comprising the amount of heat applied to silicon melt, the level of silicon melt, and the pull rate of a single-crystal silicon ingot.Type: GrantFiled: April 27, 2000Date of Patent: October 1, 2002Inventors: Tadayuki Hanamoto, Shigeo Morimoto, Masato Moriya, Toshirou Kotooka
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Patent number: 6347521Abstract: The invention provides a temperature control device with excellent temperature uniformity and thermal response, which can be manufactured easily, and a manufacturing method for the same. A thermoelectric device 21 is arranged between a substrate mounting plate 1 and a cooling plate 3. Copper foil electrodes 5, 5, . . . on the upper side of the thermoelectric device 21 are adhered to a lower surface of the substrate mounting plate 1 with an adhesive sheet 17 covering substantially the entire lower surface of the substrate mounting plate 1, and copper foil electrodes 7, 7, . . . on the lower side of the thermoelectric device 21 are adhered to an upper surface of the cooling plate 3 with an adhesive sheet 19 covering substantially the entire upper surface of the substrate mounting plate 1.Type: GrantFiled: October 11, 2000Date of Patent: February 19, 2002Assignee: Komatsu LTDInventors: Kanichi Kadotani, Makio Tsubota, Hironori Akiba, Tadayuki Hanamoto
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Patent number: 5478170Abstract: An object of this invention is to improve precision in the operation, operating efficiency, and reliability of an excavator. A soil condition at a place where an excavator (1) is advanced is inputted, and a reference number of revolutions of a cutter (9) and a reference advancing speed of the excavator (1) are set in correspondence with the inputted soil condition. Meanwhile, a load on each actuator (17, 18) is detected. The actuator (18) for rotating the cutter is controlled so as to allow the set reference number of revolutions to be obtained for the cutter (9). In a case where the load on each of the actuators (17, 18) is within a predetermined range, the actuator (17) for advancing is controlled so as to allow the set reference advancing speed to be obtained for the excavator (1).Type: GrantFiled: February 10, 1994Date of Patent: December 26, 1995Assignee: Kabushiki Kaisha Komatsu SeisakushoInventors: Tadayuki Hanamoto, Yutaka Kato, Norio Takahashi
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Patent number: 5356259Abstract: A technique relating to automatic excavation by a power shovel is shown. An ideal reference locus of movement of a front edge of a bucket is approximated by a plurality of points, positions of the plurality of points and postures of the bucket at these points are previously set. If the start of automatic excavation is assigned by an operation pedal or the like, the position of the front edge of the bucket at the assigned moment is made a position to start excavation.Type: GrantFiled: October 2, 1992Date of Patent: October 18, 1994Assignee: Kabushiki Kaisha Komatsu SeisakushoInventors: Tadayuki Hanamoto, Shinji Takasugi
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Patent number: 5312163Abstract: A system for supporting the drive of an excavating type underground advancing machine is provided to lighten the operator's burden so that an unskilled operator can perform operation comparable to that of the skilled operator. In this system for supporting the drive, output signals from a group of first sensors (12a) for measuring magnitude of operation of a rocking actuator (10) for orientation control and an output signal from a second sensor (12b) for measuring cutter torque pressure are input into an automatic measurement portion (14). These signals are adjusted in an automatic adjustment portion (15) and input to a fuzzy control portion. The rocking magnitude of an excavating cutter is calculated in a rocking magnitude control aiding system portion (16a) in response to the adjusted signal from the group of the first sensors.Type: GrantFiled: January 13, 1993Date of Patent: May 17, 1994Assignee: Kabushiki Kaisha Komatsu SeisakushoInventors: Tadayuki Hanamoto, Norio Takahashi