Abstract: A quantum dot-polymer composite pattern including at least one repeating section configured to emit light of a predetermined wavelength, and a production method and a display device including the quantum dot-polymer composite are disclosed. The quantum dot-polymer composite includes a polymer matrix including linear polymer including a carboxylic acid group-containing repeating unit and a plurality of cadmium-free quantum dots dispersed in the polymer matrix, has an absorption rate of greater than or equal to about 85% for light at wavelength of about 450 nm, and has an area ratio of a hydroxy group peak relative to an acrylate peak of greater than or equal to about 2.6 in Fourier transform infrared spectroscopy.

Abstract: A display panel and an electronic device including the display panel are provided, where the display panel includes a quantum dot composite including a matrix and a plurality of quantum dots and titanium dioxide (TiO2) particles dispersed in the matrix, the plurality of quantum dots include silver and gallium, exhibit an emission peak wavelength of from about 500 nm to about 550 nm, and a full width at half maximum of the emission peak is greater than or equal to about 10 nm and less than or equal to about 50 nm, and where the quantum dot composite has a mole ratio of silver to titanium of greater than or equal to about 0.4:1 and less than or equal to about 15:1, and a mole ratio of gallium to titanium of greater than or equal to about 0.4:1 and less than or equal to about 20:1.

Abstract: A semiconductor nanoparticle, including silver, a Group 13 metal, and a chalcogen element, wherein the semiconductor nanoparticle emits a first light, the Group 13 metal includes gallium, and optionally further includes indium, aluminum, or a combination thereof, the chalcogen element includes sulfur, and optionally further includes selenium, the first light has a full width at half maximum of greater than or equal to about 5 nanometers (nm) to less than or equal to about 70 nm, the first light has a maximum emission wavelength of greater than or equal to about 500 nm to less than or equal to about 600 nm, the semiconductor nanoparticle has a quantum yield of greater than or equal to about 50%, a mole ratio of gallium to sulfur is greater than or equal to about 0.1:1 to less than or equal to about 1:1, and a charge balance value defined by Equation 1 herein.

Abstract: A semiconductor nanoparticle, and a method for producing the semiconductor nanoparticle, and a composite, a color conversion panel, and a display panel including the semiconductor nanoparticle. The semiconductor nanoparticle includes silver, a Group 13 metal including indium and gallium, and a chalcogen element including sulfur and optionally selenium, the semiconductor nanoparticle is configured to emit a green light with an emission peak wavelength of 500 nanometers to 580 nanometers, and a full width at half maximum of about 5 nm to about 70 nm. The semiconductor nanoparticle exhibits a quantum yield of greater than or equal to about 50%, and includes a mole ratio (In+Ga):Ag of about 1:1 to about 3.5:1.

Abstract: A color conversion panel, comprising a color conversion layer comprising a color conversion region and optionally a partition wall defining each region of the color conversion layer, wherein the color conversion region comprises a first region corresponding to a first pixel, the first region comprises a first composite, the first composite comprises a matrix and a semiconductor nanoparticle, wherein the semiconductor nanoparticle is dispersed in the matrix, the semiconductor nanoparticle comprises silver, a Group 13 metal, zinc, and a chalcogen element, the semiconductor nanoparticle emits a first light, the Group 13 metal is indium, gallium, aluminum, or a combination thereof, the chalcogen element is sulfur, selenium, or a combination thereof, and in the semiconductor nanoparticle, a mole ratio of zinc to a total sum of silver, Group 13 metal, and zinc is greater than or equal to about 0.01:1.

Abstract: Disclosed are a quantum dot and a quantum dot-polymer composite and a device including the same, wherein the quantum dot includes a semiconductor nanocrystal core including indium (In) and phosphorous (P), a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc and sulfur, wherein the quantum dot does not include cadmium, wherein in the quantum dot, a mole ratio of sulfur with respect to selenium is less than or equal to about 2.5:1.

Abstract: A quantum dot-polymer composite including a polymer matrix; and core-shell quantum dots dispersed in the polymer matrix, wherein the core-shell quantum dots include a semiconductor nanocrystal core including indium, zinc, and phosphorus and a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the shell including zinc, selenium, and sulfur. The core-shell quantum dots do not include cadmium, the core-shell quantum dots are configured to emit green light, the core-shell quantum dots have a mole ratio of phosphorus to indium of greater than or equal to about 0.75, and the core-shell quantum dots have a mole ratio of zinc to indium of greater than or equal to about 35, and a method of producing the core-shell quantum dots, and a display device including a light emitting element that includes the quantum dot-polymer composite.

Abstract: A nanocrystal particle including at least one semiconductor material and at least one halogen element, the nanocrystal particle including: a core comprising a first semiconductor nanocrystal; and a shell surrounding the core and comprising a crystalline or amorphous material, wherein the halogen element is present as being doped therein or as a metal halide.

Abstract: A quantum dot including a core and a shell disposed on the core wherein one of the core and the shell includes a first semiconductor nanocrystal including zinc and sulfur and the other of the core and the shell includes a second semiconductor nanocrystal having a different composition from the first semiconductor nanocrystal, the first semiconductor nanocrystal further includes a metal and a halogen configured to act as a Lewis acid in a halide form, an amount of the metal is greater than or equal to about 10 mole percent (mol %) based on a total number of moles of sulfur, and an amount of the halogen is greater than or equal to about 10 mol % based on a total number of moles of sulfur, a method of producing the same, and a composite and an electronic device including the same.

Abstract: A cadmium-free, core shell quantum dot, a quantum dot polymer composite, and electronic devices including the quantum dot polymer composite. The core shell quantum dot has an extinction coefficient per gram of greater than or equal to 0.3, an ultraviolet-visible absorption spectrum curve that has a positive differential coefficient value at 450 nm, wherein the core shell quantum dot includes a semiconductor nanocrystal core including indium and phosphorus, and optionally zinc, and a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the shell including zinc, selenium, and sulfur, wherein the core shell quantum dot has a quantum efficiency of greater than or equal to about 80%, and is configured to emit green light upon excitation.

Abstract: The present invention relates to a silicon-carbon composite negative electrode active material, a negative electrode including the same, and a secondary battery, wherein the silicon-carbon composite negative electrode active material includes a core containing SiOx (0?X<2), a carbon layer covering at least a portion of the surface of the core, a carbon nanotube structure positioned on the carbon layer, and a polyvinylidene fluoride coating at least a portion of the carbon nanotube structure, wherein the carbon nanotube structure has a structure formed by arranging and bonding 2 to 5,000 single-walled carbon nanotube units side by side, and a portion of the carbon nanotube structure is bonded to the carbon layer.

Abstract: A method and an apparatus for real-time analysis of the district heating network is disclosed. According to an embodiment of the present disclosure, a method for analyzing a district heating network including pipes and fluids inside the pipes includes receiving, by a processor, pipe data representing a structure of the pipes; receiving, by the processor, input data on at least one of the physical state of the district heating network and the flow of fluids; calculating, by the processor, data for at least one of the physical state of the district heating network or the flow of fluids using the pipe data and the input data.

Abstract: A display device includes an organic emission layer in which a first pixel area, a second pixel area and a third pixel area are defined, a color filter layer disposed on the organic emission layer and including first to third color filters overlapping the first to third pixel areas, respectively, where the first to third color filters emit first light to third light, respectively, a first optical filter layer disposed on the color filter layer and which transmits at least one of the first light and the second light and reflects or absorbs the third light, and a light-focusing layer disposed between the color filter layer and the organic emission layer and including first to third light-focusing parts overlapping the first to third pixel areas, respectively, where at least one of the first to third color filters includes quantum dots.

Abstract: A conductive material, and a method for preparing the same are provided. The conductive material has a structure where a plurality of graphene sheets are interconnected, wherein an oxygen content is 1 wt % or higher based on the total weight of the conductive material, and a D/G peak ratio is 2.0 or less when the Raman spectrum is measured.

Abstract: A quantum dot, a production method thereof, and a quantum dot composite and a device including the same are disclosed, wherein the quantum dot includes an alloy semiconductor nanocrystal including indium (In), gallium, zinc (Zn), phosphorus (P), and sulfur (S), and in the quantum dot, a mole ratio of gallium with respect to indium (Ga:In) is greater than or equal to about 0.2:1, a mole ratio of phosphorus with respect to indium (P:In) is greater than or equal to about 0.95:1, the quantum dot does not include cadmium, and in an UV-Vis absorption spectrum of the quantum dot(s), a first absorption peak is present in a range of less than or equal to about 520 nm.

Abstract: A display device includes a first electrode, a pixel define layer disposed on the first electrode, the pixel define layer including an opening, an organic emission layer disposed on the pixel define layer, the organic emission layer in electrical communication with the first electrode through the opening, a second electrode disposed on the organic emission layer, a light recycle layer disposed on the second electrode, and a color filter layer disposed on the light recycle layer, the color filter layer including a quantum dot, wherein a width of the organic emission layer is longer than a width of the color filter layer.

Abstract: According to an embodiment of the present invention, disclosed is a camera device comprising: a housing; a lens assembly including at least one lens; a driving unit for moving the lens assembly; a main substrate on which an image sensor is provided; and a first substrate and a second substrate electrically connected to the driving unit and arranged on facing side surfaces of the housing to be spaced apart from each other, wherein the main substrate includes a first connection member connected to the first substrate and a second connection member connected to the second substrate.

Abstract: A pellicle cleaning apparatus includes a stage to support a pellicle, a particle remover above the stage, the particle remover being configured to remove a particle from a first surface of a pellicle, and the particle remover including a cantilever, and an adhesive material on a bottom surface of the cantilever, and a pressure controller adjacent to the stage, the pressure controller being configured to control a pressure of a fluid on a second surface of the pellicle.

Abstract: An electronic device and a production method thereof, wherein the electronic device includes: a semiconductor layer comprising a plurality of quantum dots; and a first electrode and a second electrode spaced apart from each other; wherein the plurality of quantum dots do not comprise cadmium, lead, or mercury; wherein the plurality of quantum dots comprise indium and optionally gallium; a Group VA element, wherein the Group VA element comprises antimony, arsenic, or a combination thereof, and a molar ratio of the Group VA element with respect to the Group IIIA metal (e.g., indium) is less than or equal to about 1.2:1, and wherein the semiconductor layer may be disposed between the first electrode and the second electrode.

Abstract: A quantum dot including a core including a semiconductor nanocrystal including a Group III-V compound; and a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc, selenium, and optionally sulfur, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc, sulfur, and optionally selenium, wherein the quantum dot does not include cadmium, an emission peak wavelength of the quantum dot is in a range of about 500 nanometers (nm) to about 550 nm, and an ultraviolet-visible absorption spectrum of the quantum dot includes a first exciton absorption peak and a second exciton absorption peak, a composition including the same, a composite, and an electronic device.