Abstract: A display device includes: a first substrate including a display area and a non-display area which is arranged outside the display area; a first dam which is disposed in the non-display area of the first substrate and which includes a first stopper having a recessed groove at a surface thereof; and a first alignment layer which covers the display area of the first substrate, the first alignment layer defining a first portion thereof which extends to the non-display area and terminates at the surface of the first stopper.

Abstract: Provided is a display device capable of preventing a liquid crystal from being left outside a microcavity. The display device includes: a substrate; a pixel electrode formed on the substrate; a roof layer formed on the pixel electrode so as to be spaced apart from the pixel electrode with a plurality of microcavities therebetween; a light blocking member positioned between two microcavities of the plurality of microcavities, overlapping with a first edge of one microcavity of the two microcavities, and not overlapping with a second edge of the other microcavity; an injection hole exposing a part of the microcavity; a liquid crystal layer filling the microcavity; and an encapsulation layer formed on the roof layer so as to cover the injection hole to seal the microcavity.

Abstract: A light emitting diode includes a light emitting structure including first and second conductive type semiconductor layers, an active layer, a first electrode electrically connected to the first conductive type semiconductor layer, a current blocking layer disposed on a lower surface of the light emitting structure, and a second electrode electrically connected to the second conductive type semiconductor layer. The second electrode includes a first reflective metal layer adjoining the second conductive type semiconductor layer, and a second reflective metal layer covering a lower surface of the current blocking layer and a lower surface of the first reflective metal layer, and adjoining the second conductive type semiconductor layer. A contact resistance between the second reflective metal layer and the second conductive type semiconductor layer is higher than a contact resistance between the first reflective metal layer and the second conductive type semiconductor layer.

Abstract: Disclosed herein are a light emitting diode including a plurality of protrusions including zinc oxide and a method for manufacturing the same. According to an exemplary embodiment of the present disclosure, the light emitting diode includes: a substrate; a nitride light emitting structure disposed on the substrate; and a transparent electrode layer disposed on the nitride light emitting structure, wherein the transparent electrode layer includes a plurality of protrusions, the plurality of protrusions each have a lower portion and an upper portion, and a side of the lower portion and a side of the upper portion have different gradients.

Abstract: Provided is a semiconductor device including a plurality of pillar columns, each of the plurality of pillar columns including a plurality of pillars arranged in one direction to be offset from each other, wherein an mth pillar and an (m+1)th pillar, among the plurality of pillars included in each pillar column, are aligned with each other (m is an integer of 0 or more).

Abstract: A liquid crystal display according to an exemplary embodiment includes: a substrate; a liquid crystal layer positioned on the substrate and formed with a plurality of microcavities including liquid crystal molecules; a roof layer positioned on the liquid crystal layer; a capping layer positioned on the roof layer; and a light source positioned on the capping layer and positioned between the plurality of microcavities.

Abstract: A display device is provided. The display device includes a substrate including a plurality of pixel areas; a thin film transistor disposed on the substrate; a first insulating layer disposed on the thin film transistor; a pixel electrode connected to the thin film transistor and disposed on the first insulating layer; a common electrode separated from the pixel electrode with a microcavity interposed therebetween; a second insulating layer disposed on the common electrode; a roof layer disposed on the second insulating layer; a hydrophobic layer disposed on the roof layer and including a plurality of protrusions; an injection hole disposed in the common electrode, the second insulating layer, and the roof layer, the injection hole exposing a portion of the microcavity; a liquid crystal layer for filling the microcavity; and an overcoat formed on the roof layer and covering the injection hole, so as to seal the microcavity.

Abstract: Disclosed herein are a light emitting diode including a plurality of protrusions including zinc oxide and a method for manufacturing the same. According to an exemplary embodiment of the present disclosure, the light emitting diode includes: a substrate; a nitride light emitting structure disposed on the substrate; and a transparent electrode layer disposed on the nitride light emitting structure, wherein the transparent electrode layer includes a plurality of protrusions, the plurality of protrusions each have a lower portion and an upper portion, and a side of the lower portion and a side of the upper portion have different gradients.

Abstract: The present invention relates to a converter for electric power having multiple sub-modules connected in series, the sub-modules having an energy storage unit and multiple power semiconductor circuits connected in parallel to the energy storage unit, and which causes an electric current to bypass a sub-module in case the breakdown of the sub-module occurs. To this end, the converter for electric power according to the present invention has multiple sub-modules connected to each other in series, the sub-modules having an energy storage unit and at least one power semiconductor circuit that is connected in parallel to the energy storage unit and comprises multiple power semiconductor switches and freewheeling diodes, wherein each of the sub-modules comprises a bypass switching unit, which is connected in parallel to any one of said at least one power semiconductor circuit, and bypasses an electric current via the bypass switching unit.

Abstract: A liquid crystal display includes: a substrate; a thin film transistor comprising one or more terminals and disposed on the substrate; a pixel electrode connected to one of the terminals of the thin film transistor; and a roof layer disposed to face the pixel electrode, wherein a microcavity is formed between the pixel electrode and the roof layer, the microcavity including a liquid crystal material, wherein a plurality of microcavities are disposed along a first row and a second row adjacent to each other, a trench is formed between the first row and the second row, and at least one bridge connecting the first row and the second row is disposed at the trench.

Abstract: Provided is an imprinting apparatus including: a stamp disposed on an area of a film; a first roller and a second roller configured to rotatably support the film such that the stamp moves along a lengthwise direction of the film as the first roller and the second roller rotate; a substrate which has an area corresponding to an area of the stamp and including a resin-coated surface disposed on a surface of the substrate; and a transfer unit which transfers the substrate while maintaining the resin-coated surface of the substrate faces downward.

Abstract: A method for forming a pattern includes forming a photosensitive film by coating a photosensitive resin composition on a substrate, exposing the photosensitive film to light through a mask that includes a light transmission region and a non-light transmission region, coating a developing solution on the photosensitive film, and forming a photosensitive film pattern by baking the photosensitive film, wherein the photosensitive resin composition includes an alkali soluble base resin, a photoacid generator and a photoactive compound.

Abstract: A liquid crystal display according to exemplary embodiment of the present system and method includes: an insulating substrate; a thin film transistor positioned on the insulating substrate; a pixel electrode connected to the thin film transistor; a common electrode spaced apart from the pixel electrode while facing the pixel electrode; a liquid crystal layer injected into a microcavity between the pixel electrode and the common electrode; a roof layer formed on the common electrode; an injection hole positioned in the roof layer and the common electrode; an overcoat configured to cover the injection hole and partially overlap the roof layer; a film layer positioned on the overcoat and the roof layer; and a flattening layer positioned on the film layer.

Abstract: A wire grid polarizer and a method of fabricating a wire grid polarizer are provided. The wire grid polarizer comprises a substrate configured to have a plurality of recessed patterns disposed on a first surface thereof, a plurality of conductive wire patterns configured to be disposed in the recessed patterns, respectively, of the substrate, and an oxide layer configured to be disposed on the substrate and the conductive wire patterns.

Abstract: A display apparatus includes a substrate; a cavity layer; a display material layer; and a capping layer. The cavity layer includes a plurality of barriers arranged to be spaced apart from one another on the substrate and partitioning pixel regions, and a roof layer connecting upper parts of the plurality of barriers. The cavity layer forms a plurality of cavities including a cavity. The display material layer is formed in the cavity. The capping layer is formed on the cavity layer, the capping layer including a sealant and a plurality of fillers dispersed in the sealant.

Abstract: A liquid crystal display includes: a substrate; a thin film transistor disposed on the substrate; a pixel electrode disposed on the thin film transistor; a roof layer facing the pixel electrode; a plurality of microcavities formed between the pixel electrode and the roof layer, each microcavity including liquid crystal materials; a trench formed between the microcavities; and a buffer region formed at an end portion of the trench.

Abstract: A liquid crystal display includes a thin film transistor disposed on a substrate, a pixel electrode connected to the thin film transistor, a lower insulating layer disposed facing the pixel electrode, a roof layer disposed on the lower insulating layer, and a microcavity formed between the pixel electrode and the lower insulating layer. The microcavity includes a liquid crystal layer including a liquid crystal material. The liquid crystal display further includes a first groove formed between a first pixel area and a second pixel area, a second groove formed between the first pixel area and a third pixel area, wherein the first groove is covered by the roof layer, the second groove is exposed at a portion where the roof layer is removed, the first pixel area corresponds to the pixel electrode, and the first pixel area is disposed between the second pixel area and the third pixel area.

Abstract: A display device according to an exemplary embodiment of the present invention having each pixel that comprises first and second subpixel areas, and an outer partition may be formed along a row direction between a plurality of liquid crystal layers, and the outer partition may separate a first liquid crystal injection hole and a second liquid crystal injection hole of two liquid crystal layers that are adjacent to each other along a column direction, thus liquid crystals are separated rather than being mixed with each other and fill their corresponding microcavities of the first and second subpixels areas.

Abstract: Disclosed herein are a light emitting diode including a plurality of protrusions including zinc oxide and a method for manufacturing the same. According to an exemplary embodiment of the present disclosure, the light emitting diode includes: a substrate; a nitride light emitting structure disposed on the substrate; and a transparent electrode layer disposed on the nitride light emitting structure, wherein the transparent electrode layer includes a plurality of protrusions, the plurality of protrusions each have a lower portion and an upper portion, and a side of the lower portion and a side of the upper portion have different gradients.

Abstract: Provided is a semiconductor device including a plurality of pillar columns, each of the plurality of pillar columns including a plurality of pillars arranged in one direction to be offset from each other, wherein an mth pillar and an (m+1)th pillar, among the plurality of pillars included in each pillar column, are aligned with each other (m is an integer of 0 or more).