Patents by Inventor Tae-Ho Hahm

Tae-Ho Hahm has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9732424
    Abstract: Provided are a gas injection device and substrate processing apparatus using the same. The gas injection device includes a plurality of gas injection units disposed above a substrate support part rotatably disposed within a chamber to support a plurality of substrates, the plurality of gas injection units being disposed along a circumference direction with respect to a center point of the substrate support part to inject a process gas onto the substrates. Wherein each of the plurality of gas injection units includes a top plate in which an inlet configured to introduce the process gas is provided and an injection plate disposed under the top plate to define a gas diffusion space between the injection plate and the top plate along a radius direction of the substrate support part, the injection plate having a plurality of gas injection holes under the gas diffusion space to inject the process gas introduced through the inlet and diffused in the gas diffusion space onto the substrate.
    Type: Grant
    Filed: August 24, 2010
    Date of Patent: August 15, 2017
    Assignee: WONIK IPS CO., LTD.
    Inventors: Jung-Hwan Lee, Woo-Young Park, Tae-Ho Hahm
  • Publication number: 20120152171
    Abstract: Provided are a gas injection device and substrate processing apparatus using the same. The gas injection device includes a plurality of gas injection units disposed above a substrate support part rotatably disposed within a chamber to support a plurality of substrates, the plurality of gas injection units being disposed along a circumference direction with respect to a center point of the substrate support part to inject a process gas onto the substrates. Wherein each of the plurality of gas injection units includes a top plate in which an inlet configured to introduce the process gas is provided and an injection plate disposed under the top plate to define a gas diffusion space between the injection plate and the top plate along a radius direction of the substrate support part, the injection plate having a plurality of gas injection holes under the gas diffusion space to inject the process gas introduced through the inlet and diffused in the gas diffusion space onto the substrate.
    Type: Application
    Filed: August 24, 2010
    Publication date: June 21, 2012
    Applicant: WONIK IPS CO., LTD.
    Inventors: Jung-Hwan Lee, Woo-Young Park, Tae-Ho Hahm