Patents by Inventor Tae Hong YIM

Tae Hong YIM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming seed layer on high-aspect ratio via and semiconductor device having high-aspect ratio via formed thereby
    Patent number: 9953867
    Abstract: Disclosed are a method of forming a seed layer on a high-aspect ratio via and a semiconductor device having a high-aspect ratio via formed thereby. Thus, efficient Cu filling-plating is possible, and plating adhesion of the seed layer to filling-plated Cu can be simply and profitably enhanced, thus imparting high durability upon forming metal wiring for electronic components. Moreover, stress of the seed layer can be lowered, thereby enhancing plating adhesion.
    Type: Grant
    Filed: March 24, 2014
    Date of Patent: April 24, 2018
    Assignee: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY
    Inventors: Young Sik Song, Tae Hong Yim
  • METHOD FOR FORMING SEED LAYER ON HIGH-ASPECT RATIO VIA AND SEMICONDUCTOR DEVICE HAVING HIGH-ASPECT RATIO VIA FORMED THEREBY
    Publication number: 20160035620
    Abstract: Disclosed are a method of forming a seed layer on a high-aspect ratio via and a semiconductor device having a high-aspect ratio via formed thereby. Thus, efficient Cu filling-plating is possible, and plating adhesion of the seed layer to filling-plated Cu can be simply and profitably enhanced, thus imparting high durability upon forming metal wiring for electronic components. Moreover, stress of the seed layer can be lowered, thereby enhancing plating adhesion.
    Type: Application
    Filed: March 24, 2014
    Publication date: February 4, 2016
    Inventors: Young Sik Song, Tae Hong YIM