Abstract: Provided is a composite heating film. The composite heating film includes conductive sheets stacked in a layered structure. Metal/metal oxide composite particles intercalated between neighboring conductive sheets among the conductive sheets are positioned. The composite heating film can generate heat with high efficiency even at a low operating voltage and can be used as a portable heating unit due to having a light weight.

Abstract: The present disclosure relates to a plurality of host materials comprising a first host material having a compound represented by formula 1, and a second host material having a compound represented by formula 2, and an organic electroluminescent device comprising the same. By comprising a specific combination of compounds of the present disclosure as host materials, it is possible to provide an organic electroluminescent device having higher luminous efficiency and/or longer lifespan properties as compared with a conventional organic electroluminescent device.

Abstract: Disclosed is a USB adapter for a vehicle that can effectively dissipate heat generated during power supply and data transmission. The USB adapter includes a casing installed at a center fascia or a console box of the vehicle, wherein one surface of the casing is open; a printed circuit board received inside the casing, wherein a USB port is mounted at one end of the printed circuit board and a receptacle is mounted at the other end of the printed circuit board; and a heat dissipation member configured to transfer heat generated during power supply and data transmission to the casing, such that the casing dissipates the heat out of the USB adapter.

Abstract: In one example, an electronic device comprises a substrate comprising a conductive structure and a dielectric structure, the dielectric structure comprising an upper dielectric layer, an electronic component over a top side of the substrate and coupled with the conductive structure, an encapsulant over the top side of the substrate and adjacent a lateral side of the electronic component, and a shield over the top side of the electronic component and contacting a lateral side of the encapsulant and a first lateral side of the substrate. The conductive structure comprises a first tab structure at the first lateral side of the substrate, and wherein the first tab structure contacts the shield and extends above the upper dielectric layer. Other examples and related methods are also disclosed herein.

Abstract: The present disclosure relates to a plurality of host materials and organic electroluminescent devices comprising the same. The present disclosure may provide a plurality of host materials having a composition favorable to thermal denaturation due to a low deposition temperature, while improving hole properties and electronic properties of HOMO and LUMO, by comprising separate compounds represented by formulas 1 and 2 into a light-emitting layer. By comprising the plurality of host materials of the present disclosure, it is possible to provide an organic electroluminescent device having a lower driving voltage, higher luminous efficiency and/or longer lifetime.

Abstract: The present disclosure relates to an organic electroluminescent compound, a plurality of host materials, and an organic electroluminescent device comprising the same. By comprising the compound according to the present disclosure or by comprising a specific combination of compounds according to the present disclosure as a plurality of host materials, it is possible to produce an organic electroluminescent device having improved driving voltage, luminous efficiency, and/or lifetime properties compared to the conventional organic electroluminescent devices.

Abstract: A sidestream smoke removal device and a control method thereof are provided. The sidestream smoke removal device according to some embodiments of the present disclosure may include a housing in which a smoking space is formed, an article insertion portion which is disposed at one end of the housing and forms an opening for insertion of a smoking article into the smoking space, an ignition portion which is configured to ignite the smoking article inserted into the smoking space, a sidestream smoke processing portion which is configured to process sidestream smoke generated from the smoking article inserted into the smoking space, and a heating portion disposed inside the housing to heat the smoking space. The heating portion may heat the smoking space to remove a smell generated due to by-products of smoking, and accordingly, the cleanliness of the sidestream smoke removal device can be improved.

Abstract: A coated cutting tool having excellent wear resistance and controlled brittleness is provided. An embodiment of the present disclosure provides a coated cutting tool including: a substrate; and a cutting layer disposed on the substrate, wherein: the cutting layer includes a brittleness suppressing layer and a wear-resistant layer disposed on the brittleness suppressing layer; the substrate includes a hard alloy body such as cemented carbide, cermet, ceramic, cubic boron nitride-based materials, or high-speed steel; the brittleness suppressing layer includes a first layer and a second layer disposed on the first layer; the first layer and the second layer each independently includes any one of (AlbTi1-b)X (where 0.6<b<0.8, and X is at least one selected from N, C, CN, NO, CO, and CNO) and (TicAl1-c)X (where 0.4<c?0.5, and X is at least one selected from N, C, CN, NO, CO, and CNO); and the first layer and the second layer include materials different from each other.

Abstract: A semiconductor fabrication apparatus comprising a light source configured to emit light, a substrate stage arranged to receive a substrate exposed to the emitted light, a reticle arranged between the substrate stage and the light source, and a reticle stage arranged to receive the reticle. The reticle stage including a lower plate, an upper plate arranged above the lower plate, an actuator connected to the lower plate configured to move in a direction parallel to the upper plate, a first cable slab arranged between the upper plate and the lower plate and connected to one side of the actuator, and a first cable cover that surrounds an outer periphery of the first cable slab and contacts the lower plate when the first cable slab becomes bent.

Abstract: A mobile certificate issue server, system, and method are provided. The mobile certificate issue server includes a certificate generation part for generating a certificate using a public key included in certificate issue request information received from a user terminal, an e-mail sending part for sending the certificate to an e-mail address accessible to the mobile terminal of a user, and a server-side certificate conversion part for converting the certificate into information having a recognition format capable of being recognized by the mobile terminal Here, the e-mail sending part sends the certificate through e-mail in an attachment form. The e-mail sending part stores the information having the recognition format in a file form, inserts the file into the e-mail as an attachment file, and sends the e-mail to the e-mail address accessible to the mobile terminal of the user.

Abstract: Provided are a nonvolatile memory device and a method of manufacturing the same. The device includes a semiconductor substrate; a source region and a drain region disposed in the semiconductor substrate and a channel region interposed between the source and drain regions; a first tunnel oxide layer disposed on the channel region near the source region; a second tunnel oxide layer disposed on the channel region near the drain region; a first charge trapping layer disposed on the first tunnel oxide layer; a second charge trapping layer disposed on the second tunnel oxide layer; a blocking oxide layer covering the first and second charge trapping layers; a charge isolation layer interposed between the first and second charge trapping layers; and a gate electrode disposed on the blocking oxide layer.

Abstract: Provided are a nonvolatile memory device and a method of manufacturing the same. The device includes a semiconductor substrate; a source region and a drain region disposed in the semiconductor substrate and a channel region interposed between the source and drain regions; a first tunnel oxide layer disposed on the channel region near the source region; a second tunnel oxide layer disposed on the channel region near the drain region; a first charge trapping layer disposed on the first tunnel oxide layer; a second charge trapping layer disposed on the second tunnel oxide layer; a blocking oxide layer covering the first and second charge trapping layers; a charge isolation layer interposed between the first and second charge trapping layers; and a gate electrode disposed on the blocking oxide layer.

Abstract: Provided are a nonvolatile memory device and a method of manufacturing the same. The device includes a semiconductor substrate; a source region and a drain region disposed in the semiconductor substrate and a channel region interposed between the source and drain regions; a first tunnel oxide layer disposed on the channel region near the source region; a second tunnel oxide layer disposed on the channel region near the drain region; a first charge trapping layer disposed on the first tunnel oxide layer; a second charge trapping layer disposed on the second tunnel oxide layer; a blocking oxide layer covering the first and second charge trapping layers; a charge isolation layer interposed between the first and second charge trapping layers; and a gate electrode disposed on the blocking oxide layer.

Abstract: Provided are a nonvolatile memory device and a method of manufacturing the same. The device includes a semiconductor substrate; a source region and a drain region disposed in the semiconductor substrate and a channel region interposed between the source and drain regions; a first tunnel oxide layer disposed on the channel region near the source region; a second tunnel oxide layer disposed on the channel region near the drain region; a first charge trapping layer disposed on the first tunnel oxide layer; a second charge trapping layer disposed on the second tunnel oxide layer; a blocking oxide layer covering the first and second charge trapping layers; a charge isolation layer interposed between the first and second charge trapping layers; and a gate electrode disposed on the blocking oxide layer.