Patents by Inventor Tae-Jun Kim

Tae-Jun Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20120149144
    Abstract: A method for manufacturing a solar cell is presented. The method includes: forming an amorphous silicon layer on a first surface of a light absorbing layer; doping the amorphous silicon layer with a dopant; forming a dopant layer by diffusing the dopant into the amorphous silicon layer with a laser; forming a semiconductor layer by removing the dopant that remains outside the dopant layer; etching the surface of the semiconductor layer by using an etchant; forming a first electrode on the semiconductor layer; and forming a second electrode on a second surface of the light absorbing layer.
    Type: Application
    Filed: October 18, 2011
    Publication date: June 14, 2012
    Inventors: Myung-Su KIM, Min-Chul Song, Soon-Young Park, Dong-Seop Kim, Sung Chan Park, Yoon-Mook Kang, Tae-Jun Kim, Min-Ki Shin, Sang-Won Lee, Heung-Kyoon Lim
  • Patent number: 8193709
    Abstract: A plasma display panel includes a pair of substrates facing each other, barrier ribs defining discharge cells between the pair of substrates, sustain electrodes between the pair of substrates, the sustain electrodes including second bus electrodes along a first direction, the second bus electrodes being on the barrier ribs, scan electrodes between the pair of substrates, the scan electrodes including first bus electrodes along the first direction, the first bus electrodes being positioned between adjacent second bus electrodes, address electrodes between the pair of substrates, the address, scan, and sustain electrodes being configured to generate discharge in the discharge cells, and phosphors in the discharge cells, the phosphors being configured to emit light by the discharge.
    Type: Grant
    Filed: May 18, 2009
    Date of Patent: June 5, 2012
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Woo-Joon Chung, Tae-Jun Kim
  • Patent number: 8124997
    Abstract: There are provided a method of manufacturing a nitride semiconductor light emitting device and the nitride semiconductor light emitting device manufactured by the method, the method including: forming a light emitting structure by sequentially growing a first conductivity nitride layer, an active layer and a second conductivity type nitride layer on a preliminary substrate for nitride single crystal growth; separating the light emitting structure in accordance with a size of final light emitting device; forming a conductive substrate on the light emitting structure; polishing a bottom surface of the preliminary substrate to reduce a thickness of the preliminary substrate; forming uneven surface structures by machining the preliminary substrate; selectively removing the preliminary substrate to expose portions of the first conductivity type nitride layer; and forming electrodes on the portions of the first conductivity type nitride layer exposed by selectively removing the preliminary substrate.
    Type: Grant
    Filed: April 8, 2010
    Date of Patent: February 28, 2012
    Assignee: Samsung Led Co., Ltd.
    Inventors: Tae Jun Kim, Su Yeol Lee, Dong Woo Kim, Hyun Ju Park, Hyoun Soo Shin, In Joon Pyeon
  • Publication number: 20110128270
    Abstract: A driving method of a plasma display device with reduced black luminance is provided. During at least one TV field without a main reset period, the at least one TV field including a first subfield and a second subfield having a reset waveform in a reset period of the first subfield and the second subfield, respectively, the method includes: applying a first scan low voltage or a first scan high voltage to a scan electrode during an address period of the first subfield; and applying a second scan low voltage or a second scan high voltage to the scan electrode during an address period of the second subfield, wherein the first and the second scan low voltages are maintained at a constant level for a period of time in the first and second subfields, respectively, and the first scan low voltage is different from the second scan low voltage.
    Type: Application
    Filed: August 12, 2010
    Publication date: June 2, 2011
    Inventors: Woo-Joon Chung, Tae-Jun Kim, Ji-Sun Kim
  • Patent number: 7906785
    Abstract: A vertical nitride semiconductor light emitting device and a manufacturing method thereof are provided. In the device, an ohmic contact layer, a p-type nitride semiconductor layer, an active layer, an n-type nitride semiconductor layer and an n-electrode are sequentially formed on a conductive substrate. At least one of a surface of the p-type nitride semiconductor layer contacting the ohmic contact layer and a surface of the n-type nitride layer contacting the n-electrode has a high resistance area of damaged nitride single crystal in a substantially central portion thereof. The high resistance area has a Schottky junction with at least one of the ohmic contact layer and the n-electrode.
    Type: Grant
    Filed: October 24, 2006
    Date of Patent: March 15, 2011
    Assignee: Samsung LED Co., Ltd.
    Inventors: Doo Go Baik, Bang Won Oh, Tae Jun Kim
  • Publication number: 20100331051
    Abstract: A mobile terminal and controlling method thereof are disclosed. According to the present invention, when audio information including recorded voice of a correspondent party is displayed on a screen of a mobile terminal, contact information matching the audio information of the correspondent party stored in the mobile terminal is searched and displayed on the screen. Therefore, a user is able to directly contact the correspondent party having recorded the audio information within the screen.
    Type: Application
    Filed: June 15, 2010
    Publication date: December 30, 2010
    Inventors: Tae Jun KIM, Jong Keun YOUN
  • Patent number: 7791100
    Abstract: A vertical GaN-based LED includes an n-type bonding pad; an n-electrode formed under the n-type bonding pad; a light-emitting structure formed by sequentially laminating an n-type GaN layer, an active layer, and a p-type GaN layer under the n-electrode; a p-electrode formed under the light-emitting structure; and a support layer formed under the p-electrode. The light-emitting structure has or or more trenches which are spaced at a predetermined distance with the n-electrode from the outermost side of the light-emitting structure and in which the active layer of the light-emitting structure is removed.
    Type: Grant
    Filed: November 21, 2006
    Date of Patent: September 7, 2010
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Su Yeol Lee, Dong Woo Kim, Seok Beom Choi, Tae Jun Kim
  • Publication number: 20100207932
    Abstract: A plasma display device and a method of driving the same according to the black load of a displayed image. The plasma display device includes a plurality of first electrodes and a plurality of second electrodes extending in parallel, a plurality of pixels each having a plurality of discharge cells defined by the first and the second electrodes, a driver adapted to apply a first reset waveform to the first electrodes and a second reset waveform to the second electrodes during a reset period, and a controller adapted to adjust at least one of a voltage of the first reset waveform or a voltage of the second reset waveform in accordance with a black load of an image signal corresponding to the plurality of pixels.
    Type: Application
    Filed: December 29, 2009
    Publication date: August 19, 2010
    Inventors: Seung-Won Choi, Tae-Jun Kim, Woo-Joon Chung, Jin-Hee Jung
  • Publication number: 20100193823
    Abstract: There are provided a method of manufacturing a nitride semiconductor light emitting device and the nitride semiconductor light emitting device manufactured by the method, the method including: forming a light emitting structure by sequentially growing a first conductivity nitride layer, an active layer and a second conductivity type nitride layer on a preliminary substrate for nitride single crystal growth; separating the light emitting structure in accordance with a size of final light emitting device; forming a conductive substrate on the light emitting structure; polishing a bottom surface of the preliminary substrate to reduce a thickness of the preliminary substrate; forming uneven surface structures by machining the preliminary substrate; selectively removing the preliminary substrate to expose portions of the first conductivity type nitride layer; and forming electrodes on the portions of the first conductivity type nitride layer exposed by selectively removing the preliminary substrate.
    Type: Application
    Filed: April 8, 2010
    Publication date: August 5, 2010
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Tae Jun KIM, Su Yeol Lee, Dong Woo Kim, Hyun Ju Park, Hyoun Soo Shin, In Joon Pyeon
  • Publication number: 20100171736
    Abstract: A plasma display panel includes electrodes repeatedly disposed on a first substrate in an order of a sustain electrode, a scan electrode, a scan electrode and a sustain electrode, first barrier ribs disposed to overlap the sustain electrodes, and second barrier ribs disposed to overlap the scan electrodes and having a lower height than the first barrier ribs, wherein a space between the first barrier ribs and the second barrier ribs forms a main discharge space, a space between adjacent first barrier ribs forms an auxiliary discharge space, and the scan electrodes are formed to protrude to the auxiliary discharge space.
    Type: Application
    Filed: December 10, 2009
    Publication date: July 8, 2010
    Inventors: Ju-Gon Seok, Woo-Joon Chung, Tae-Jun Kim
  • Patent number: 7727787
    Abstract: There are provided a method of manufacturing a nitride semiconductor light emitting device and the nitride semiconductor light emitting device manufactured by the method, the method including: forming a light emitting structure by sequentially growing a first conductivity nitride layer, an active layer and a second conductivity type nitride layer on a preliminary substrate for nitride single crystal growth; separating the light emitting structure in accordance with a size of final light emitting device; forming a conductive substrate on the light emitting structure; polishing a bottom surface of the preliminary substrate to reduce a thickness of the preliminary substrate; forming uneven surface structures by machining the preliminary substrate; selectively removing the preliminary substrate to expose portions of the first conductivity type nitride layer; and forming electrodes on the portions of the first conductivity type nitride layer exposed by selectively removing the preliminary substrate.
    Type: Grant
    Filed: October 29, 2007
    Date of Patent: June 1, 2010
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Tae Jun Kim, Su Yeol Lee, Dong Woo Kim, Hyun Ju Park, Hyoun Soo Shin, In Joon Pyeon
  • Publication number: 20100127302
    Abstract: A light emitting diode package according to an aspect of the invention may include: a body receiving a light emitting diode; a lead electrically connected to the light emitting diode; and an adapter receiving a modified electrode electrically connected to the lead so that the polarity of the modified electrode is changed into the polarity of the lead, the adapter in which the body is received and fixed.
    Type: Application
    Filed: September 30, 2009
    Publication date: May 27, 2010
    Inventors: Tae Jun KIM, Young Suk Han, Won Ho Jung
  • Publication number: 20100090599
    Abstract: A plasma display panel that reduces power consumption, improves visual discharge characteristics, and improves dark room contrast includes: sustain electrodes and scan electrodes that comprise transparent electrodes that are disposed having a discharge gap therebetween and bus electrodes formed on the transparent electrodes such that the discharge gap is formed to be nearer one side of a discharge cell and the bus electrode of the scan electrode is disposed near the discharge gap.
    Type: Application
    Filed: October 8, 2009
    Publication date: April 15, 2010
    Applicant: Samsung SDI Co., Ltd.
    Inventors: Seung-Won CHOI, Tae-Jun Kim, Woo-Joon Chung, Goon-Ho Kim
  • Publication number: 20100052529
    Abstract: A plasma display panel with improved power efficiency and visual characteristics and contrast. The plasma display panel includes a first substrate and a second substrate facing the first substrate. A plurality of barrier ribs are on a side of the first substrate facing the second substrate and define a plurality of discharge cells. Sustain electrodes and scan electrodes extend on a side of the second substrate facing the first substrate, and each of the sustain electrodes and the scan electrodes has a bus electrode. One of the scan electrodes forms a discharge gap with a corresponding one of the sustain electrodes, wherein one of the sustain electrodes corresponds to two adjacent rows of discharge cells among the plurality of discharge cells, and the bus electrode of the one of the scan electrodes is adjacent to the discharge gap.
    Type: Application
    Filed: March 12, 2009
    Publication date: March 4, 2010
    Inventors: Tae-Jun Kim, Woo-Joon Chung
  • Publication number: 20100009114
    Abstract: A beam formed of a plank and a method for manufacturing the same are disclosed. The beam includes a body formed by bending a work object of a plank; a connection part formed at both ends of the body to engage with other members, and a bent part formed along the body. The beam facilitates formation of a shape imparting improved rigidity to the beam.
    Type: Application
    Filed: July 8, 2009
    Publication date: January 14, 2010
    Applicant: HWASHIN CO., LTD.
    Inventor: Tae Jun KIM
  • Publication number: 20090289543
    Abstract: A plasma display panel includes a pair of substrates facing each other, barrier ribs defining discharge cells between the pair of substrates, sustain electrodes between the pair of substrates, the sustain electrodes including second bus electrodes along a first direction, the second bus electrodes being on the barrier ribs, scan electrodes between the pair of substrates, the scan electrodes including first bus electrodes along the first direction, the first bus electrodes being positioned between adjacent second bus electrodes, address electrodes between the pair of substrates, the address, scan, and sustain electrodes being configured to generate discharge in the discharge cells, and phosphors in the discharge cells, the phosphors being configured to emit light by the discharge.
    Type: Application
    Filed: May 18, 2009
    Publication date: November 26, 2009
    Inventors: Woo-Joon Chung, Tae-Jun Kim
  • Publication number: 20090253463
    Abstract: A mobile terminal including an input unit configured to receive an input to activate a voice recognition function on the mobile terminal and a memory configured to store multiple domains related to menus and operations of the mobile terminal. It further includes a controller configured to access a specific domain among the multiple domains included in the memory based on the received input to activate the voice recognition function, to recognize user speech based on a language model and an acoustic model of the accessed domain, and to determine at least one menu and operation of the mobile terminal based on the accessed specific domain and the recognized user speech.
    Type: Application
    Filed: June 16, 2008
    Publication date: October 8, 2009
    Inventors: Jong-Ho SHIN, Jong-Keun YOUN, Dae-Sung JUNG, Jae-Hoon YU, Tae-Jun KIM, Jae-Min JOH, Jae-Do KWAK
  • Patent number: 7393710
    Abstract: The present invention relates to a two-wavelength semiconductor laser device, more particularly, to a fabrication method of a multi-wavelength semiconductor laser device. In this method, a substrate having an upper surface separated into at least first and second areas is provided. Then, a first dielectric mask on the substrate is formed to expose only the first area. Then, epitaxial layers for a first semiconductor laser are grown on the first area of the substrate. Then, a second dielectric mask on the substrate is formed to expose only the second area. Then, epitaxial layers for a second semiconductor laser are grown on the second area of the substrate.
    Type: Grant
    Filed: October 11, 2005
    Date of Patent: July 1, 2008
    Assignee: Samsung Electro-Mechanics Co., Ltd
    Inventors: Jin Chul Kim, Su Yeol Lee, Chang Zoo Kim, Sang Heon Han, Keun Man Song, Tae Jun Kim, Seok Beom Choi
  • Publication number: 20080105889
    Abstract: There are provided a method of manufacturing a nitride semiconductor light emitting device and the nitride semiconductor light emitting device manufactured by the method, the method including: forming a light emitting structure by sequentially growing a first conductivity nitride layer, an active layer and a second conductivity type nitride layer on a preliminary substrate for nitride single crystal growth; separating the light emitting structure in accordance with a size of final light emitting device; forming a conductive substrate on the light emitting structure; polishing a bottom surface of the preliminary substrate to reduce a thickness of the preliminary substrate; forming uneven surface structures by machining the preliminary substrate; selectively removing the preliminary substrate to expose portions of the first conductivity type nitride layer; and forming electrodes on the portions of the first conductivity type nitride layer exposed by selectively removing the preliminary substrate.
    Type: Application
    Filed: October 29, 2007
    Publication date: May 8, 2008
    Inventors: Tae Jun Kim, Su Yeol Lee, Dong Woo Kim, Hyun Ju Park, Hyoun Soo Shin, In Joon Pyeon
  • Publication number: 20070145391
    Abstract: A vertical nitride semiconductor light emitting device and a manufacturing method thereof are provided. In the device, an ohmic contact layer, a p-type nitride semiconductor layer, an active layer, an n-type nitride semiconductor layer and an n-electrode are sequentially formed on a conductive substrate. At least one of a surface of the p-type nitride semiconductor layer contacting the ohmic contact layer and a surface of the n-type nitride layer contacting the n-electrode has a high resistance area of damaged nitride single crystal in a substantially central portion thereof. The high resistance area has a Schottky junction with at least one of the ohmic contact layer and the n-electrode.
    Type: Application
    Filed: October 24, 2006
    Publication date: June 28, 2007
    Inventors: Doo Go Baik, Bang Won Oh, Tae Jun Kim