Abstract: An image sensing device includes a photoelectric conversion element configured to generate photocharges in response to incident light, a floating diffusion configured to temporarily store the photocharges generated by the photoelectric conversion element, and a transfer gate configured to transmit the photocharges generated by the photoelectric conversion element to the floating diffusion region. The transfer gate includes a main transfer gate disposed to overlap a center section of the photoelectric conversion element and configured to operate in response to a first transmission signal, and a sub transfer gate disposed to overlap a boundary region of the photoelectric conversion element and configured to operate in response to a second potential level different from the first potential level.

Abstract: A light emitting diode having a plurality of light emitting cells is provided. A light emitting diode according to an embodiment includes a reflection metal layer covering a region between light emitting cells, in which the reflection metal layer is disposed between connectors electrically connecting adjacent light emitting cells, and electrically insulated from a bump pad.

Abstract: In one example, a semiconductor structure comprises a redistribution structure comprising a conductive structure, a cavity substrate on a top side of the redistribution structure and having a cavity and a pillar contacting the redistribution structure, an electronic component on the top surface of the redistribution structure and in the cavity, wherein the electronic component is electrically coupled with the conductive structure, and an encapsulant in the cavity and on the top side of the redistribution structure, contacting a lateral side of the electronic component, a lateral side of the cavity, and a lateral side of the pillar. Other examples and related methods are also disclosed herein.

Abstract: This light emitting device comprises: a substrate; a light emitting laminate disposed on the substrate; first and second electrodes provided on the light emitting laminate; first and second bumps provided on the first and second electrodes, respectively; a passivation film which is provided on the substrate, exposes portions of the upper surfaces of the first and second bumps, and covers the laminate; and a light conversion layer covering the rear surface of the substrate, a side surface of the substrate, and a side surface of the passivation film.

Abstract: A light emitting diode is provided to include a substrate; a light emitting structure disposed on the substrate, and including first and second semiconductor layers; a transparent electrode in ohmic contact with the second semiconductor layer; a contact electrode disposed on the first semiconductor layer; a current spreader disposed on the transparent electrode; a first insulation reflection layer covering the substrate, the light emitting structure, the transparent electrode, the contact electrode, and the current spreader, having openings exposing portions of the contact electrode and the current spreader, and including a distributed Bragg reflector; first and second pad electrodes disposed on the first insulation reflection layer and connected to the contact electrode and the current spreader through the openings; and a second insulation reflection layer disposed under the substrate and including a distributed Bragg reflector.

Abstract: Discussed is a method of manufacturing an organic light emitting display panel for simplifying a manufacturing process and enhancing display quality. The organic light emitting display panel can include a first electrode disposed in each of subpixel areas of a substrate, bank layers disposed on the substrate at a boundary portion between adjacent subpixel areas, a lateral surface of the bank layers being hydrophilic, a first organic material layer disposed on the bank layers and the first electrode, a surface of the first organic material layer on the bank layers being hydrophobic, a second organic material layer disposed on the first organic material layer between adjacent bank layers, a third organic material layer disposed on the second organic material layer and the first organic material layer, and a second electrode disposed on the third organic material layer.

Abstract: A method of manufacturing a full-color holographic optical element in a full-color holographic optical element manufacturing apparatus including a lens and a holographic recording medium located farther away than a focal length of the lens, the method including: allowing a signal beam including a mixture of laser beams having wavelengths of R (Red), G (Green), and B (Blue) to be incident on the lens; and recording a hologram in such a manner that a reference beam including a mixture of laser beams having wavelengths of R, G, and B is allowed to be incident on the holographic recording medium, wherein the holographic recording medium is configured with a single medium.

Abstract: In one example, an electronic device, comprises a first substrate comprising a first conductive structure, a second substrate comprising a second conductive structure, wherein the first substrate is over the second substrate, a first electronic component between the first substrate and the second substrate, a vertical interconnect between the first substrate and the second substrate, wherein the vertical interconnect is coupled with the first conductive structure and the second conductive structure, and an encapsulant between the first substrate and the second substrate and covering the vertical interconnect. A vertical port on the first electronic component is exposed by an aperture of the first substrate. Other examples and related methods are also disclosed herein.

Abstract: Provided is a low frequency vibrating actuator device. The low frequency vibrating actuator device includes a substrate including a pair of connection electrodes, an actuator provided on the pair of connection electrodes to generate vibration, a support provided on the actuator, a vibration membrane provided on the support to vibrate according to the actuator, and a vibrating mass provided on the vibration membrane to vibrate according to the vibration membrane. The actuator includes a plurality of laminated insulating layers and internal electrodes that are alternately laminated between the insulating layers adjacent to each other, and a top surface of the support, which contacts the vibration membrane, has an area that is equal to or less than that of a bottom surface of the support, which contacts the actuator.

Abstract: A reel-to-reel circuit board manufacturing apparatus according to an embodiment of the present disclosure includes: a material which is moved while being wound and unwound by an uncoiler and a recoiler, and a clamp that is arranged so that a width direction of the material matches a lengthwise direction thereof, and is configured to fix the material, wherein the clamp includes a first clamp and a second clamp formed on opposite ends thereof, and a first-and-second clamp linkage formed between the first and second clamps.

Abstract: In one example, a semiconductor device can comprise a substrate, a device stack, first and second internal interconnects, and an encapsulant. The substrate can comprise a first and second substrate sides opposite each other, a substrate outer sidewall between the first substrate side and the second substrate side, and a substrate inner sidewall defining a cavity between the first substrate side and the second substrate side. The device stack can be in the cavity and can comprise a first electronic device, and a second electronic device stacked on the first electronic device. The first internal interconnect can be coupled to the substrate and the device stack. The encapsulant can cover the substrate inner sidewall and the device stack and can fill the cavity. Other examples and related methods are disclosed herein.

Abstract: Disclosed is a vibration stimulation device. The vibration stimulation device includes a box having a cavity, vibrators disposed in the cavity; light emitting elements disposed between the vibrators or disposed on the vibrators, an upper vibration layer configured to connect the vibrators and the light emitting elements to edges of the box on the cavity, and bumps disposed on the vibrators.

Abstract: The present disclosure relates to a 2-dimensional polymer nanosheet, a device including the nanosheet and a method of morphologically tunable preparing the nanosheet. Two-dimensional (2D) polymer nanosheets have been attracting immense attention owing to their potential applications in optical devices, membranes, and catalysis. A new crystalline polyacetylene is described that contains fluorenes and triisopropylsilyl side chains, which could self-assemble into sharp-edged 5-nm-thick square nanosheets with a narrow length dispersity of 1.01, by simple heating and aging in dichloromethane (DCM). The addition of tetrahydrofuran (THF) or chloroform to the heated polymer solution in DCM changed the morphology from square to rectangle. The aspect ratios increased linearly, from 1.0 to 10.6, according to the amount of THF or chloroform added, while maintaining narrow length dispersities less than 1.06.

Abstract: Disclosed herein is a washing machine. The washing machine includes a main body having a laundry inlet on the front portion, a tub provided inside the main body to store water, a drum rotatably installed inside the tub, a pulsator provided inside the drum and configured to be rotatable with respect to the drum, a first driving motor to provide power to the pulsator, and a second driving motor to provide power to the drum.

Abstract: A method of manufacturing a semiconductor device having a semiconductor die within an extended substrate and a bottom substrate may include bonding a bottom surface of a semiconductor die to a top surface of a bottom substrate, forming an adhering member to a top surface of the semiconductor die, bonding an extended substrate to the semiconductor die and to the top surface of the bottom substrate utilizing the adhering member and a conductive bump on a bottom surface of the extended substrate and a conductive bump on the bottom substrate. The semiconductor die and the conductive bumps may be encapsulated utilizing a mold member. The conductive bump on the bottom surface of the extended substrate may be electrically connected to a terminal on the top surface of the extended substrate. The adhering member may include a laminate film, a non-conductive film adhesive, or a thermal hardening liquid adhesive.

Abstract: In one example, a semiconductor device can comprise a substrate, a device stack, first and second internal interconnects, and an encapsulant. The substrate can comprise a first and second substrate sides opposite each other, a substrate outer sidewall between the first substrate side and the second substrate side, and a substrate inner sidewall defining a cavity between the first substrate side and the second substrate side. The device stack can be in the cavity and can comprise a first electronic device, and a second electronic device stacked on the first electronic device. The first internal interconnect can be coupled to the substrate and the device stack. The encapsulant can cover the substrate inner sidewall and the device stack and can fill the cavity. Other examples and related methods are disclosed herein.

Abstract: In one example, a semiconductor structure comprises a frontside substrate comprising a conductive structure, a backside substrate comprising a base substrate and a cavity substrate contacting the base substrate, wherein the backside substrate is over a top side of the frontside substrate and has a cavity and an internal interconnect contacting the frontside substrate, and a first electronic component over the top side of the frontside substrate and in the cavity. The first electronic component is coupled with the conductive structure, and an encapsulant is in the cavity and on the top side of the frontside substrate, contacting a lateral side of the first electronic component, a lateral side of the cavity, and a lateral side of the internal interconnect. Other examples and related methods are also disclosed herein.

Abstract: In one example, an electronic device, comprises a first substrate comprising a first conductive structure, a second substrate comprising a second conductive structure, wherein the first substrate is over the second substrate, a first electronic component between the first substrate and the second substrate, a vertical interconnect between the first substrate and the second substrate, wherein the vertical interconnect is coupled with the first conductive structure and the second conductive structure, and an encapsulant between the first substrate and the second substrate and covering the vertical interconnect. A vertical port on the first electronic component is exposed by an aperture of the first substrate. Other examples and related methods are also disclosed herein.

Abstract: A method of manufacturing a semiconductor device having a semiconductor die within an extended substrate and a bottom substrate may include bonding a bottom surface of a semiconductor die to a top surface of a bottom substrate, forming an adhering member to a top surface of the semiconductor die, bonding an extended substrate to the semiconductor die and to the top surface of the bottom substrate utilizing the adhering member and a conductive bump on a bottom surface of the extended substrate and a conductive bump on the bottom substrate. The semiconductor die and the conductive bumps may be encapsulated utilizing a mold member. The conductive bump on the bottom surface of the extended substrate may be electrically connected to a terminal on the top surface of the extended substrate. The adhering member may include a laminate film, a non-conductive film adhesive, or a thermal hardening liquid adhesive.

Abstract: A pharmaceutical composition comprising udenafil is disclosed.