Abstract: A method for fabricating a metal oxide semiconductor (MOS) transistor, which can reduce the junction capacitance without degradation of transistor characteristics including forming a buffer oxide layer on a semiconductor substrate; successively conducting ion implantations for well formation and field stop formation in the substrate through the buffer oxide layer; removing the buffer oxide layer; forming and patterning a sacrificial layer to form a trench successively conducting ion implantations for threshold voltage adjustment and punch stop formation on the semiconductor substrate area exposed by the trench; forming a gate oxide layer on the exposed surface of the substrate; forming a polysilicon layer so as to completely fill the trench; polishing the polysilicon layer to form a gate electrode; removing the sacrificial layer; forming an LDD region in the substrate; forming spacers on side walls of the gate electrode; and forming source/drain regions.

Abstract: In a method for fabricating a metal oxide semiconductor (MOS) transistor, which can reduce the junction capacitance without a degradation of characteristics in a transistor even in gate line narrowing, the method comprising the steps of: forming a buffer oxide layer on a semiconductor substrate having an isolation layer; successively conducting ion implantations for well formation and field stop formation in an active region of the substrate through the buffer oxide layer; removing the buffer oxide layer; forming a sacrificial layer of the semiconductor substrate; patterning the sacrificial layer to form a trench defining a gate electrode forming region; successively conducting ion implantations for threshold voltage adjustment and punch stop formation on the semiconductor substrate area exposed by the trench; forming a gate oxide layer on the surface of the substrate under the bottom face of the trench; forming a polysilicon layer on the sacrificial layer so as to completely bury the trench; polishing the po

Abstract: The present invention includes a braiding machine having three or more vessels, each vessel having an outer housing and an internal telescoping mandrel, the vessels being removably mounted on a portion of two wheel drums, the drums rotating and the direction of each vessel around the drum being altered by a toggling detent. To use the device, hair is wrapped onto an extended telescoped mandrel, the mandrel is collapsed, and a housing is placed on the mandrel to provide a vessel; three or more vessels are then mounted onto the drums and, when the device is powered, the hair on the mandrels emerges from the device as a braid.

Abstract: The present invention includes a braiding machine having three or more vessels, each vessel having an outer housing and an internal telescoping mandrel, the vessels being removably mounted on a portion of two wheel drums, the drums rotating and the direction of each vessel around the drum being altered by a toggling detent. To use the device, hair is wrapped onto an extended telescoped mandrel, the mandrel is collapsed, and a housing is placed on the mandrel to provide a vessel; three or more vessels are then mounted onto the drums and, when the device is powered, the hair on the mandrels emerges from the device as a braid.