Abstract: An operating method of a delay locked loop (DLL) circuit for a semiconductor memory device is disclosed. The DLL circuit may include a plurality of sub-circuits. The method may include calculating an additive latency value based on predetermined parameters, and controlling a set of the plurality of sub-circuits of the DLL circuit to be maintained in a turn-off state based on the calculated additive latency value, during a period of time after the semiconductor device receives an operation command in a power saving mode.

Abstract: A delay-locked loop circuit includes a phase detector and a coarse-lock detector. The phase detector receives a feedback clock and a first clock to generate first and second phase detecting signals, respectively. The coarse-lock detector generates a coarse-lock signal based on changes of phase of the first and second phase detecting signals.

Abstract: A delay locked loop (DLL) circuit having improved noise characteristics. The DLL circuit includes a first divider for generating a first divided signal by dividing an external clock; a second divider for generating a second divided signal by dividing an internal clock; a phase detector for detecting a phase difference between the first divided signal and the second divided signal; and an adjusting unit for synchronizing the internal clock and the external clock, based on the phase difference.

Abstract: An operating method of a delay locked loop (DLL) circuit for a semiconductor memory device is disclosed. The DLL circuit may include a plurality of sub-circuits. The method may include calculating an additive latency value based on predetermined parameters, and controlling a set of the plurality of sub-circuits of the DLL circuit to be maintained in a turn-off state based on the calculated additive latency value, during a period of time after the semiconductor device receives an operation command in a power saving mode.

Abstract: A delay-locked loop circuit includes a phase detector and a coarse-lock detector. The phase detector receives a feedback clock and a first clock to generate first and second phase detecting signals, respectively. The coarse-lock detector generates a coarse-lock signal based on changes of phase of the first and second phase detecting signals.

Abstract: The duty correcting circuit includes a duty cycle corrector, a duty detector and a duty correction code generator. The duty cycle corrector corrects a duty cycle of an input clock signal to generate an output clock signal. The duty detector adjusts a delay time of the output clock signal to generate a sampling clock signal, samples the output clock signal in response to the sampling clock signal to generate sample data, and detects a duty of the output clock signal based on logic states of the sample data. Therefore, the duty correcting circuit precisely detects and corrects a duty of the output clock signal.

Abstract: A phase interpolator includes a delay difference detector and a phase interpolation driver. The delay difference detector receives a delay code to detect a delay difference. The phase interpolation driver includes two or more driver blocks complementarily operating, and the phase interpolation driver interpolate two input signals in response to the delay difference to provide an interpolated output signal. Each of two or more driver blocks includes a plurality of unit drivers, each input of the unit drivers is commonly connected, and each delay of the two or more driver blocks is varied according to the delay difference.

Abstract: A phase interpolator includes a delay difference detector and a phase interpolation driver. The delay difference detector receives a delay code to detect a delay difference. The phase interpolation driver includes two or more driver blocks complementarily operating, and the phase interpolation driver interpolate two input signals in response to the delay difference to provide an interpolated output signal. Each of two or more driver blocks includes a plurality of unit drivers, each input of the unit drivers is commonly connected, and each delay of the two or more driver blocks is varied according to the delay difference.

Abstract: The duty correcting circuit includes a duty cycle corrector, a duty detector and a duty correction code generator. The duty cycle corrector corrects a duty cycle of an input clock signal to generate an output clock signal. The duty detector adjusts a delay time of the output clock signal to generate a sampling clock signal, samples the output clock signal in response to the sampling clock signal to generate sample data, and detects a duty of the output clock signal based on logic states of the sample data. Therefore, the duty correcting circuit precisely detects and corrects a duty of the output clock signal.

Abstract: Provided are a duty cycle correction circuit and method for correcting a duty cycle, and a semiconductor device including the duty cycle correction circuit. The duty cycle correction circuit includes a code generator configured to generate a first and a second duty code for adjusting the duty cycle of a clock to a target duty cycle, and a duty cycle corrector including a plurality of inverter circuits connected in series and whose driving capabilities are adjusted in response to the first and second duty code, wherein the duty cycle corrector is configured to correct the duty cycle of the clock based on the driving capabilities of the inverter circuits and to output a corrected clock.