Abstract: A refrigerator including left and right doors of rotating opening/closing type and a sliding door between the left and right doors. The left and right rotating opening/closing doors have an improved slim edge structure such that a door thickness is hidden. The sliding door includes door guards to accommodate food.

Abstract: The present invention includes methods for effecting phenotype conversion in a cell by transfecting the cell with phenotype-converting nucleic acid. Expression of the nucleic acids results in a phenotype conversion in the transfected cell. Preferably the phenotype-converting nucleic acid is a transcriptome, and more preferably an mRNA transcriptome.

Abstract: A refrigerator including left and right doors of rotating opening/closing type and a sliding door between the left and right doors. The left and right rotating opening/closing doors have an improved slim edge structure such that a door thickness is hidden. The sliding door includes door guards to accommodate food.

Abstract: In a method of forming a phase-change memory device, a variable resistance member may be formed on a s semiconductor substrate having a contact region, and a first electrode may be formed to contact a first portion of the variable resistance member and to be electrically connected to the contact region. A second electrode may be formed so as to contact a second portion of the variable resistance member.

Abstract: A filament member configured to discharge thermions may be employed in an ion source of an ion implantation apparatus. A filament member may include an anode disposed around a central portion of the filament member, a cathode disposed around a periphery of the filament and/or enclosing the anode, and at least one conductive path disposed between the anode and the cathode to discharge the thermions.

Abstract: In a method of forming a phase-change memory device, a variable resistance member may be formed on a s semiconductor substrate having a contact region, and a first electrode may be formed to contact a first portion of the variable resistance member and to be electrically connected to the contact region. A second electrode may be formed so as to contact a second portion of the variable resistance member.

Abstract: In a method of forming a phase-change memory device, a variable resistance member may be formed on a s semiconductor substrate having a contact region, and a first electrode may be formed to contact a first portion of the variable resistance member and to be electrically connected to the contact region. A second electrode may be formed so as to contact a second portion of the variable resistance member.

Abstract: A filament member configured to discharge thermions may be employed in an ion source of an ion implantation apparatus. A filament member may include an anode disposed around a central portion of the filament member, a cathode disposed around a periphery of the filament and/or enclosing the anode, and at least one conductive path disposed between the anode and the cathode to discharge the thermions.

Abstract: Disclosed is a simulation method for determining wafer warpage. This method includes dividing layers and evaluating a composition ratio of materials composing the layers. The method mathematically transforms a semiconductor device, which is constructed as a complicated structure with various materials, into a simplified, mathematically equivalent stacked structure comprising a plurality of unit layer, and utilizes values of mechanical characteristics, which are obtained from the transformed layer structure, for estimating wafer warpage. As a result, it is possible to complete an operation of wafer warpage simulation using information about pattern density of the semiconductor device.

Abstract: The present invention can provide ion implanter devices including an arc chamber including at least a first inner region and a second inner region, an electron emitting device disposed in the arc chamber adjacent the first inner region and adapted to emit electrons, an electron returning device disposed in the arc chamber adjacent the second inner region and adapted to return at least some of the electrons emitted from the electron emitting device into the second inner region; and an electric field and magnetic field generating device adapted to provide a magnetic field to the arc chamber, wherein at least one inner wall of the arc chamber has a convex surface.

Abstract: A deposition apparatus may include a deposition-preventing member for preventing deposition of process gas on a portion of substrate removeably arranged inside a processing chamber. The deposition-preventing member may include a fixing member for fixing the deposition preventing member to a fixed body of the processing chamber, a blocking member for blocking the to-be-blocked portion of the substrate to be processed, and a guiding member for guiding fluid and particles out from the processing chamber, the guiding member may include a guiding surface that prevents a vortex from forming on the deposition-preventing member when fluid and particles are flowing out of the processing chamber.

Abstract: A phase-change memory device may include first and second spaced apart conductive electrodes, and a phase-change memory element coupled between the first and second conductive electrodes. More particularly, a first portion of the phase-change memory element may have a first cross-sectional area along a current path between the first and second conductive electrodes, and a second portion of the phase-change memory element may have a second cross-sectional area along the current path between the first and second conductive electrodes. Moreover, the first and second cross-sectional areas may be different.

Abstract: The present invention can provide ion implanter devices including an arc chamber including at least a first inner region and a second inner region, an electron emitting device disposed in the arc chamber adjacent the first inner region and adapted to emit electrons, an electron returning device disposed in the arc chamber adjacent the second inner region and adapted to return at least some of the electrons emitted from the electron emitting device into the second inner region; and an electric field and magnetic field generating device adapted to provide a magnetic field to the arc chamber, wherein at least one inner wall of the arc chamber has a convex surface.

Abstract: In a method of forming a phase-change memory device, a variable resistance member may be formed on a s semiconductor substrate having a contact region, and a first electrode may be formed to contact a first portion of the variable resistance member and to be electrically connected to the contact region. A second electrode may be formed so as to contact a second portion of the variable resistance member.

Abstract: A phase-change memory device may include first and second spaced apart conductive electrodes, and a phase-change memory element coupled between the first and second conductive electrodes. More particularly, a first portion of the phase-change memory element may have a first cross-sectional area along a current path between the first and second conductive electrodes, and a second portion of the phase-change memory element may have a second cross-sectional area along the current path between the first and second conductive electrodes. Moreover, the first and second cross-sectional areas may be different.

Abstract: Characteristics of a plasma contained in a reaction chamber of a plasma reactor are determined by first computing plasma characteristics for each of a plurality of cross-sections of the reaction chamber, and then generating a generalized model of the plasma from the computed plasma characteristics for the plurality of cross-sections, for example, by averaging the computed plasma characteristics for the cross-sections. The plasma reactor may comprise a plurality of magnets that move with respect to the reaction chamber, such as in a dipole ring magnet (DRM) plasma reactor, and each of the plurality of cross-sections may include an axis of rotation about which the magnets rotate. Plasma characteristics for each the cross-sections of the reaction chamber may be computed by computing electron density and temperature using a Monte Carlo computational procedure and computing ion and neutral species transmission phenomena from a plasma dynamics simulation, e.g.