Abstract: Provided is a production method for indan and hydrindane, including a reaction step of introducing a raw material composition including tetrahydroindene into a continuous reactor including a solid catalyst containing platinum, and bringing the raw material composition into contact with the solid catalyst under the conditions of 150° C. to 350° C. to obtain a reaction product including indan and hydrindane, in which the amount (mol/min) of hydrogen molecules is 5 times or less the amount (mol/min) of tetrahydroindene, and the amount (mol/min) of oxygen molecules is 0.1 times or less the amount (mol/min) of tetrahydroindene.

Abstract: Provided is a process for fluid catalytic cracking of a heavy oil by contacting the oil with a catalyst at an elevated temperature for a short period of time to produce light olefins such as propylene and butene. The process comprises contacting the heavy oil with a catalyst containing 12 to 24 percent by mass of a shape selective zeolite under conditions of a reaction zone outlet temperature of 580 to 630° C., a catalyst/oil ratio of 15 to 40 weight/weight and a hydrocarbon residence time in the reaction zone of 0.1 to 1.0 second to produce a cracked product having a secondary cracking activity (C2 olefin concentration/C4 olefin concentration) value in the range of 0.30 to 0.55.

Abstract: Provided is a process for fluid catalytic cracking of a heavy oil by contacting the oil with a catalyst at an elevated temperature for a short period of time to produce light olefins such as propylene and butene. The process includes contacting the heavy oil with a catalyst containing as a constituent thereof a fluid catalytic cracking catalyst with a weight ratio (Wmat/Wusy) of an active matrix weight (Wmat) to an ultrastable Y type zeolite weight (Wusy) of 0 to 0.3, under conditions where the reaction zone outlet temperature is from 580 to 630° C., the catalyst/oil ratio is from 15 to 40 weight/weight and the residence time of hydrocarbon in the reaction zone is from 0.1 to 1.0 second.

Abstract: A photoelectric conversion element comprising: a photoelectric conversion layer; and a plurality of metal nanoparticles arranged in the form of a two-dimensional array on the photoelectric conversion layer on its principal face side that is opposite to its light receiving face, wherein the plurality of metal nanoparticles are arranged with a particle density that is equal to or greater than 5.0×108/cm2 and is equal to or smaller than 3.0×109/cm2.

Abstract: An exhaust gas treatment system treats a mixed gas containing at least hydrogen and monosilane discharged from a semiconductor fabrication equipment. The exhaust gas treatment system includes a pump unit which emits the mixed gas discharged from the semiconductor fabrication equipment, a compressor which compresses the mixed gas emitted by the pump unit and sends the mixed gas to a rear stage, a gas accommodation unit which collects and accommodates the compressed mixed gas, a flow rate control unit which controls a flow rate of the mixed gas supplied from the gas accommodation unit, and a membrane separation unit which causes the hydrogen to selectively permeate therethrough and separates the monosilane and the hydrogen from the mixed gas. Accordingly, the exhaust gas treatment system may be stably operated in a state where a change in pressure of the mixed gas discharged from the semiconductor fabrication equipment is alleviated.

Abstract: An exhaust gas treatment system treats a mixed gas containing at least hydrogen and monosilane discharged from a semiconductor fabrication equipment. The exhaust gas treatment system includes a pump unit which emits the mixed gas discharged from the semiconductor fabrication equipment, a compressor which compresses the mixed gas emitted by the pump unit and sends the mixed gas to a rear stage, a gas accommodation unit which collects and accommodates the compressed mixed gas, a flow rate control unit which controls a flow rate of the mixed gas supplied from the gas accommodation unit, and a membrane separation unit which causes the hydrogen to selectively permeate therethrough and separates the monosilane and the hydrogen from the mixed gas. Accordingly, the exhaust gas treatment system may be stably operated in a state where a change in pressure of the mixed gas discharged from the semiconductor fabrication equipment is alleviated.

Abstract: An exhaust gas processing apparatus for processing a mixed gas discharged from a semiconductor manufacturing apparatus is provided with: an adsorption separation unit for separating a monosilane gas that requires abatement and a hydrogen gas that does not require abatement by allowing the mixed gas to pass through and then by mainly adsorbing the monosilane gas among a plurality of types of gases contained in the mixed gas; a heating unit for desorbing the monosilane adsorbed onto the adsorption separation unit; a silane gas abatement unit for abating a monosilane gas desorbed from the adsorption separation unit; and a hydrogen gas discharge unit for discharging a hydrogen gas separated from the mixed gas by the adsorption separation unit.