Patents by Inventor Taichi Hayamizu

Taichi Hayamizu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device with a fuse formed by a damascene technique and a method of manufacturing the same
    Patent number: 8686538
    Abstract: In order to improve the reliability of a semiconductor device having a fuse formed by a Damascene technique, a barrier insulating film and an inter-layer insulating film are deposited over a fourth-layer wiring and a fuse. The barrier insulating film is an insulating film for preventing the diffusion of Cu and composed of a SiCN film deposited by plasma CVD like the underlying barrier insulating film. The thickness of the barrier insulating film covering the fuse is larger than the thickness of the underlying barrier insulating film so as to improve the moisture resistance of the fuse.
    Type: Grant
    Filed: August 28, 2012
    Date of Patent: April 1, 2014
    Assignee: Renesas Electronics Corporation
    Inventors: Katsuhiko Hotta, Kyoko Sasahara, Taichi Hayamizu, Yuichi Kawano
  • SEMICONDUCTOR DEVICE WITH A FUSE FORMED BY A DAMASCENE TECHNIQUE AND A METHOD OF MANUFACTURING THE SAME
    Publication number: 20120319235
    Abstract: In order to improve the reliability of a semiconductor device having a fuse formed by a Damascene technique, a barrier insulating film and an inter-layer insulating film are deposited over a fourth-layer wiring and a fuse. The barrier insulating film is an insulating film for preventing the diffusion of Cu and composed of a SiCN film deposited by plasma CVD like the underlying barrier insulating film. The thickness of the barrier insulating film covering the fuse is larger than the thickness of the underlying barrier insulating film so as to improve the moisture resistance of the fuse.
    Type: Application
    Filed: August 28, 2012
    Publication date: December 20, 2012
    Inventors: Katsuhiko Hotta, Kyoko Sasahara, Taichi Hayamizu, Yuichi Kawano
  • Semiconductor device with a fuse formed by a damascene technique and a method of manufacturing the same
    Patent number: 8269309
    Abstract: In order to improve the reliability of a semiconductor device having a fuse formed by a Damascene technique, a barrier insulating film and an inter-layer insulating film are deposited over a fourth-layer wiring and a fuse. The barrier insulating film is an insulating film for preventing the diffusion of Cu and composed of a SiCN film deposited by plasma CVD like the underlying barrier insulating film. The thickness of the barrier insulating film covering the fuse is larger than the thickness of the underlying barrier insulating film so as to improve the moisture resistance of the fuse.
    Type: Grant
    Filed: March 25, 2011
    Date of Patent: September 18, 2012
    Assignee: Renesas Electronics Corporation
    Inventors: Katsuhiko Hotta, Kyoko Sasahara, Taichi Hayamizu, Yuichi Kawano
  • SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME
    Publication number: 20110169128
    Abstract: In order to improve the reliability of a semiconductor device having a fuse formed by a Damascene technique, a barrier insulating film and an inter-layer insulating film are deposited over a fourth-layer wiring and a fuse. The barrier insulating film is an insulating film for preventing the diffusion of Cu and composed of a SiCN film deposited by plasma CVD like the underlying barrier insulating film. The thickness of the barrier insulating film covering the fuse is larger than the thickness of the underlying barrier insulating film so as to improve the moisture resistance of the fuse.
    Type: Application
    Filed: March 25, 2011
    Publication date: July 14, 2011
    Inventors: KATSUHIKO HOTTA, Kyoko Sasahara, Taichi Hayamizu, Yuichi Kawano
  • Semiconductor device with fuse and a method of manufacturing the same
    Patent number: 7968966
    Abstract: In order to improve the reliability of a semiconductor device having a fuse formed by a Damascene technique, a barrier insulating film and an inter-layer insulating film are deposited over a fourth-layer wiring and a fuse. The barrier insulating film is an insulating film for preventing the diffusion of Cu and composed of a SiCN film deposited by plasma CVD like the underlying barrier insulating film. The thickness of the barrier insulating film covering the fuse is larger than the thickness of the underlying barrier insulating film so as to improve the moisture resistance of the fuse.
    Type: Grant
    Filed: September 21, 2009
    Date of Patent: June 28, 2011
    Assignee: Renesas Electronics Corporation
    Inventors: Katsuhiko Hotta, Kyoko Sasahara, Taichi Hayamizu, Yuichi Kawano
  • SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME
    Publication number: 20100013046
    Abstract: In order to improve the reliability of a semiconductor device having a fuse formed by a Damascene technique, a barrier insulating film and an inter-layer insulating film are deposited over a fourth-layer wiring and a fuse. The barrier insulating film is an insulating film for preventing the diffusion of Cu and composed of a SiCN film deposited by plasma CVD like the underlying barrier insulating film. The thickness of the barrier insulating film covering the fuse is larger than the thickness of the underlying barrier insulating film so as to improve the moisture resistance of the fuse.
    Type: Application
    Filed: September 21, 2009
    Publication date: January 21, 2010
    Inventors: Katsuhiko Hotta, Kyoko Sasahara, Taichi Hayamizu, Yuichi Kawano
  • Semiconductor device and a method of manufacturing the same
    Patent number: 7602040
    Abstract: In order to improve the reliability of a semiconductor device having a fuse formed by a Damascene technique, a barrier insulating film and an inter-layer insulating film are deposited over a fourth-layer wiring and a fuse. The barrier insulating film is an insulating film for preventing the diffusion of Cu and composed of a SiCN film deposited by plasma CVD like the underlying barrier insulating film. The thickness of the barrier insulating film covering the fuse is larger than the thickness of the underlying barrier insulating film so as to improve the moisture resistance of the fuse.
    Type: Grant
    Filed: April 14, 2008
    Date of Patent: October 13, 2009
    Assignee: Renesas Technology Corp.
    Inventors: Katsuhiko Hotta, Kyoko Sasahara, Taichi Hayamizu, Yuichi Kawano
  • SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME
    Publication number: 20080211103
    Abstract: In order to improve the reliability of a semiconductor device having a fuse formed by a Damascene technique, a barrier insulating film and an inter-layer insulating film are deposited over a fourth-layer wiring and a fuse. The barrier insulating film is an insulating film for preventing the diffusion of Cu and composed of a SiCN film deposited by plasma CVD like the underlying barrier insulating film. The thickness of the barrier insulating film covering the fuse is larger than the thickness of the underlying barrier insulating film so as to improve the moisture resistance of the fuse.
    Type: Application
    Filed: April 14, 2008
    Publication date: September 4, 2008
    Inventors: Katsuhiko HOTTA, Kyoko Sasahara, Taichi Hayamizu, Yuichi Kawano
  • Semiconductor device and a method of manufacturing the same
    Patent number: 7419901
    Abstract: In order to improve the reliability of a semiconductor device having a fuse formed by a Damascene technique, a barrier insulating film and an inter-layer insulating film are deposited over a fourth-layer wiring and a fuse. The barrier insulating film is an insulating film for preventing the diffusion of Cu and composed of a SiCN film deposited by plasma CVD like the underlying barrier insulating film. The thickness of the barrier insulating film covering the fuse is larger than the thickness of the underlying barrier insulating film so as to improve the moisture resistance of the fuse.
    Type: Grant
    Filed: June 16, 2006
    Date of Patent: September 2, 2008
    Assignee: Renesas Technology Corp.
    Inventors: Katsuhiko Hotta, Kyoko Sasahara, Taichi Hayamizu, Yuichi Kawano
  • Semiconductor device and a method of manufacturing the same
    Publication number: 20070026664
    Abstract: In order to improve the reliability of a semiconductor device having a fuse formed by a Damascene technique, a barrier insulating film and an inter-layer insulating film are deposited over a fourth-layer wiring and a fuse. The barrier insulating film is an insulating film for preventing the diffusion of Cu and composed of a SiCN film deposited by plasma CVD like the underlying barrier insulating film. The thickness of the barrier insulating film covering the fuse is larger than the thickness of the underlying barrier insulating film so as to improve the moisture resistance of the fuse.
    Type: Application
    Filed: June 16, 2006
    Publication date: February 1, 2007
    Inventors: Katsuhiko Hotta, Kyoko Sasahara, Taichi Hayamizu, Yuichi Kawano
  • Method of manufacturing a semiconductor device
    Patent number: 6583036
    Abstract: On a substrate, a gate insulating film, a polysilicon film on the gate insulating film, and a resist pattern on the polysilicon film are formed. Subsequently an exposed portion of the polysilicon film which is not covered with the resist pattern is removed. The surface of the polysilicon film left after the step of removing the exposed portion of the polysilicon film is thermally oxidized to form a gate electrode and an insulating film simultaneously on the surface of the gate electrode.
    Type: Grant
    Filed: May 10, 2002
    Date of Patent: June 24, 2003
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventor: Taichi Hayamizu
  • METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
    Publication number: 20030113987
    Abstract: On a substrate, a gate insulating film, a polysilicon film on the gate insulating film, and a resist pattern on the polysilicon film are formed. Subsequently an exposed portion of the polysilicon film which is not covered with the resist pattern is removed. The surface of the polysilicon film left after the step of removing the exposed portion of the polysilicon film is thermally oxidized to form a gate electrode and an insulating film simultaneously on the surface of the gate electrode.
    Type: Application
    Filed: May 10, 2002
    Publication date: June 19, 2003
    Inventor: Taichi Hayamizu