Abstract: The present invention relates to a seasoning from malted rice used as a raw material containing 0.3 ppm or more of maltol and/or 0.25 ppm or more of methional, and 10% (w/v) or more of glucose.

Abstract: A photomask is used for transferring a mask pattern onto a semiconductor substrate. The mask pattern includes a junction at which two line patterns are connected to each other with one line pattern being orthogonal to the other line pattern so as to form a T-shape, or a proximity portion at which two line patterns are located close to each other with one line pattern being substantially orthogonal to the other line pattern so as to form a T-shape. A small pattern is formed on a side edge of the line pattern in the vicinity of the junction or the proximity portion so as to form a wide portion of the line pattern. The small pattern is provided within the range between 0.79 and 1.8 ?/(NA·K) of a distance from the neighboring side edge of the other line pattern, where ? is the wavelength of exposure illumination light, NA is the numerical aperture of a lens used, and K is a transfer reduction ratio.

Abstract: A photomask is used for transferring a mask pattern onto a semiconductor substrate. The mask pattern includes a junction at which two line patterns are connected to each other with one line pattern being orthogonal to the other line pattern so as to form a T-shape, or a proximity portion at which two line patterns are located close to each other with one line pattern being substantially orthogonal to the other line pattern so as to form a T-shape. A small pattern is formed on a side edge of the line pattern in the vicinity of the junction or the proximity portion so as to form a wide portion of the line pattern. The small pattern is provided within the range between 0.79 and 1.8 &lgr;/(NA·K) of a distance from the neighboring side edge of the other line pattern, where &lgr; is the wavelength of exposure illumination light, NA is the numerical aperture of a lens used, and K is a transfer reduction ratio.

Abstract: A first correlation is obtained which is a correlation between latent image height produced after exposure on a resist layer, and resist pattern linewidth for a given length of develop time. Additionally, a second correlation is obtained which is a correlation between develop time for each exposure energy dose and resist pattern linewidth. The height of a latent image produced on an actually exposed resist layer is determined. From the first correlation, an estimated resist pattern linewidth, which is a resist pattern linewidth corresponding to a latent image height and to a given length of develop time, is found. From the second correlation, an estimated exposure energy dose, which is an exposure energy dose corresponding to a given length of develop time and to an estimated resist patten linewidth, is found.

Abstract: A first correlation is obtained which is a correlation between latent image height produced after exposure on a resist layer, and resist pattern linewidth for a given length of develop time. Additionally, a second correlation is obtained which is a correlation between develop time for each exposure energy dose and resist pattern linewidth. The height of a latent image produced on an actually exposed resist layer is determined. From the first correlation, an estimated resist pattern linewidth, which is a resist pattern linewidth corresponding to a latent image height and to a given length of develop time, is found. From the second correlation, an estimated exposure energy dose, which is an exposure energy dose corresponding to a given length of develop time and to an estimated resist pattern linewidth, is found.

Abstract: A first correlation is obtained which is a correlation between latent image height produced after exposure on a resist layer, and resist pattern linewidth for a given length of develop time. Additionally, a second correlation is obtained which is a correlation between develop time for each exposure energy dose and resist pattern linewidth. The height of a latent image produced on an actually exposed resist layer is determined. From the first correlation, an estimated resist pattern linewidth, which is a resist pattern linewidth corresponding to a latent image height and to a given length of develop time, is found. From the second correlation, an estimated exposure energy dose, which is an exposure energy dose corresponding to a given length of develop time and to an estimated resist patten linewidth, is found.

Abstract: Herein is provided a fine pattern forming method which is prevented from the charging-up phenomenon at the time of electric charged beam writing owing to the use of a polyalkylthiophene type conductive polymeric substance or a quaternary ammonium ion type polymeric substance in a monolayer or multilayer resist.

Abstract: In a pattern forming process using a chemical amplification type resist, a good pattern with high contrast between exposed portions and non-exposed portions due to photobleach of a dye and a large process latitude can be obtained by adding a dye such as Sudan Orange, or a dye having a reducing absorption by exposure to light such as naphthoquinonediazide sulfonic acid ester to a chemical amplification type resist for ultraviolet rays, particularly i-line of 365 nm or ultraviolet rays of 365 nm or less.

Abstract: The present invention provides a method of forming a fine pattern comprising the steps of forming on a semiconductor substrate an organic polymer film and heat treating it, forming on the organic polymer film an inorganic film and heat treating it, forming on the inorganic film an electron beam resist film and heat treating it, drawing a pattern on the resist film, developing it to form a resist pattern, and etching the inorganic film and the organic polymer film using the resist pattern as a mask, wherein the improvement comprises using one substance selected from the group consisting of a polyphenylene sulfide, a derivative thereof, and a polymer represented by the formula (I): ##STR1## where n is a positive integer, for forming at least one of the organic polymer film and the electron beam resist film.

Abstract: A scanning electron microscope is disclosed in which an objective lens includes a first pole piece and a second pole piece. The first pole piece is provided with a hole through which an electron beam passes, and is disposed between an electron gun for emitting the electron beam and the second pole piece. The second pole piece has a planar portion on which a specimen is placed, and the second pole piece being mounted on a supporting block movable in a plane substantially perpendicular to the projecting direction of the electron beam.

Abstract: Provided is a method for forming fine pattern free from shear of pattern caused by charging and high in dry etch resistance by using a high molecular organic film containing an organometallic complex or a metallic salt in single-layer or multi-layer resist process and treating the surface of this film with a reducing agent to form a metallic layer on the surface.

Abstract: A fine pattern forming method capable of forming an accurate fine pattern without charge-up at the time of electron beam or focus ion beam exposure, by treating the bottom layer or intermediate layer or silicon containing resist of a multi-layer resist with ion shower irradiation or reducing solvent.

Abstract: A fine pattern forming method capable of forming an accurate fine pattern without charge-up at the time of electron beam or focus ion beam exposure is provided by treating the bottom layer or intermediate layer or silicon containing resist of a multi-layer resist with ion shower irradiation or reducing solvent.