Abstract: Provided are a low-viscosity ultraviolet curable silicone composition capable of being used even in a surface exposure method and a lift-up method etc.; and a cured product superior in tensile strength and elongation at break.

Abstract: Provided is an oxygen-curable silicone composition that cures at room temperature, the reaction being triggered by oxygen in the atmosphere, without requiring heat or UV irradiation at the time of use, and exhibits good mechanical strength after curing. A composition including (A) an organopolysiloxane (1) (R1 represents an alkyl group or the like but has at least one acryloyloxy group or the like in the molecule, R2 represents an oxygen atom or the like, and m and n represent numbers that satisfy 1?m+n 1,000.), (B) a silicone resin including (a) a unit of formula (2), (b) an R13SiO1/2 unit, and (c) an SiO4/2 unit, the molar ratio of [(a)+(b)]/(c) being 0.4-1.2, and the silicone resin having 0.005 mol/100 g or more Si-OH groups (R1 and R2 are the same as above. R3 represents an acryloyloxyalkyl group or the like, p represents 0-10, and 1 represents a number that satisfies 1-3.), and (C) an organoborane complex (3) (R4-R6 represent hydrocarbon groups.).

Abstract: A method for fabricating light emitting diode (LED) dice includes the steps of: providing a substrate, and forming a plurality of die sized semiconductor structures on the substrate. The method also includes the steps of providing a receiving plate having an elastomeric polymer layer, placing the substrate and the receiving plate in physical contact with an adhesive force applied by the elastomeric polymer layer, and performing a laser lift-off (LLO) process by directing a uniform laser beam through the substrate to the semiconductor layer at an interface with the substrate to lift off the semiconductor structures onto the elastomeric polymer layer. During the laser lift-off (LLO) process the elastomeric polymer layer functions as a shock absorber to reduce momentum transfer, and as an adhesive surface to hold the semiconductor structures in place on the receiving plate.

Abstract: A device includes a processor, a first interface, and a second interface. The first interface is configured to receive a media stream corresponding to a live radio broadcast. The media stream includes a content item and an identifier of the content item. The processor is configured to provide data to a display in response to receiving a replay selection. The data corresponds to a list of identifiers of a plurality of received content items. The processor is also configured to receive an input indicating a particular identifier of the list of identifiers. The second interface is configured to send a request to a remotely located on-demand content source. The request includes the particular identifier. The second interface is configured to receive a particular content item from the on-demand content source. The particular content item corresponds to the particular identifier. Other aspects are also disclosed.

Abstract: In a method for forming a three-dimensional interconnection, a contact plug is formed within a through hole provided in a substrate and an upper wire formed on an upper side of the substrate and a lower wire formed on a lower side are electrically connected to one another by the contact plug. A coating film is formed on an upper surface of the substrate and inner surface of the through hole by applying a metal film-forming composition containing at least one salt of and a particle of a metal to the substrate provided with the through hole. A metal film is formed by heating the coating film, and plated by filling up the through hole by depositing a conductor on the metal film by a plating process using the metal film as a seed layer. An excess conductor deposited in the plating is removed by a chemical mechanical polishing process.

Abstract: In a method for forming a three-dimensional interconnection, a contact plug is formed within a through hole provided in a substrate and an upper wire formed on an upper side of the substrate and a lower wire formed on a lower side are electrically connected to one another by the contact plug. A coating film is formed on an upper surface of the substrate and inner surface of the through hole by applying a metal film-forming composition containing at least one salt of and a particle of a metal to the substrate provided with the through hole. A metal film is formed by heating the coating film, and plated by filling up the through hole by depositing a conductor on the metal film by a plating process using the metal film as a seed layer. An excess conductor deposited in the plating is removed by a chemical mechanical polishing process.

Abstract: A chemical mechanical polishing aqueous dispersion includes (A) colloidal silica having an average particle size calculated from the specific surface area determined by the BET method of 10 to 60 nm, (B) an organic acid having two or more carboxyl groups and one or more hydroxyl groups in one molecule, and (C) a quaternary ammonium compound shown by the following general formula (1), wherein R1 to R4 individually represent hydrocarbon groups, and M? represents an anion, the chemical mechanical polishing aqueous dispersion having a pH of 3 to 5.

Abstract: A method of forming a trench isolation, comprising the steps of: applying a silicone resin composition comprising a silicone resin which is represented by the following rational formula (1) and is solid at 120° C.: (H2SiO)n(HSiO1.5)m(SiO2)k??(1) (wherein n, m and k are each a number, with the proviso that when n+m+k=1, n is 0 to 0.8, m is 0 to 1.0, and k is 0 to 0.2) and an organic solvent to a substrate having trenches in such a manner that the trenches of the substrate are filled with the silicone resin composition so as to form a coating film; and carrying out the step of bringing the coating film into contact with at least one selected from the group consisting of water, an alcohol and hydrogen peroxide and the step of subjecting the coating film to at least one treatment selected from the group consisting of a heat treatment and an optical treatment.

Abstract: A method of forming a trench isolation, comprising the steps of: applying a silicone resin composition comprising a silicone resin which is represented by the following rational formula (1) and is solid at 120° C.: (H2SiO)n(HSiO1.5)m(SiO2)k??(1) (wherein n, m and k are each a number, with the proviso that when n+m+k=1, n is 0 to 0.8, m is 0 to 1.0, and k is 0 to 0.2) and an organic solvent to a substrate having trenches in such a manner that the trenches of the substrate are filled with the silicone resin composition so as to form a coating film; and carrying out the step of bringing the coating film into contact with at least one selected from the group consisting of water, an alcohol and hydrogen peroxide and the step of subjecting the coating film to at least one treatment selected from the group consisting of a heat treatment and an optical treatment.

Abstract: A chemical mechanical polishing aqueous dispersion includes (A) colloidal silica having an average particle size calculated from the specific surface area determined by the BET method of 10 to 60 nm, (B) an organic acid having two or more carboxyl groups and one or more hydroxyl groups in one molecule, and (C) a quaternary ammonium compound shown by the following general formula (1), wherein R1 to R4 individually represent hydrocarbon groups, and M? represents an anion, the chemical mechanical polishing aqueous dispersion having a pH of 3 to 5.

Abstract: The electroless plating solution of the present invention is an electroless plating solution used for selectively forming a protective film on a surface of an exposed wiring in the production of a semiconductor device having a wiring structure, wherein the electroless plating solution includes a cobalt ion, an ion of a second metal other than cobalt, a chelating agent, a reducing agent, a surface active agent and a specific tetraalkylammonium hydroxide, and the surface active agent is selected from the group consisting of a compound represented by the following formula (2a) or (2b), a sulfonic acid type anionic surface active agent, a polyoxyethylene alkyl ether phosphoric ester and a polyoxyalkylene monoalkyl ether, wherein R5 to R8 are each a hydrogen atom or a specific alkyl group, R9 and R10 are each an alkylene group of 2 to 5 carbon atoms, j and k are each independently an integer of not less than 1, and the sum of j and k is 2 to 50.