Abstract: An indoor unit included in an air conditioner that includes an outdoor unit includes a power receiving circuit (PR2), a low-frequency transmission and reception circuit as a first reception circuit, a high-frequency transmission and reception circuit as a transmission and reception circuit, and an inner-controller. The low-frequency transmission and reception circuit receives a current signal transmitted from an outdoor unit by using a current loop formed by a power line included in power supply wiring. For a first communication state in which physical connection between with the outdoor unit is recognized and a second communication state in which communication for operation of the air conditioner is performed between with the outdoor unit, the inner-controller selects use of the low-frequency transmission and reception circuit and the high-frequency transmission and reception circuit in the first communication state and the second communication state.

Abstract: A method for forming a SiC film on a target substrate by ALD, comprises: activating a surface of the target substrate by activation gas plasma which is plasmatized an activation gas; and forming a SiC film by supplying a source gas containing a precursor represented by a chemical formula RSiX13 or RSiHClX2 onto the target substrate whose the surface is activated by activating the surface of the target substrate, where, R is an organic group having an unsaturated bond, X1 is selected from a group consisting of H, F, Cl, Br and I, and X2 is one selected from a group consisting of Cl, Br and I.

Abstract: A method for forming a SiC film on a target substrate by ALD, comprises: activating a surface of the target substrate by activation gas plasma which is plasmatized an activation gas; and forming a SiC film by supplying a source gas containing a precursor represented by a chemical formula RSiX13 or RSiHClX2 onto the target substrate whose the surface is activated by activating the surface of the target substrate, where, R is an organic group having an unsaturated bond, X1 is selected from a group consisting of H, F, Cl, Br and I, and X2 is one selected from a group consisting of Cl, Br and I.

Abstract: There is provided a method of forming a sealing film to seal a device formed on a substrate, including: supplying a mixture gas including a silicon-containing gas and a halogen element-containing gas or a mixture gas including a silicon-containing gas and a gas containing a functional group having an electronegative property stronger than that of nitrogen, as a first mixture gas, into a processing container; generating plasma of the first mixture gas within the processing container; and forming a first sealing film to cover the device using the first mixture gas activated by the plasma.

Abstract: There is a method of selectively etching a silicon oxide film among a silicon nitride film and the silicon oxide film formed on a surface of a substrate to be processed, the method including: under a vacuum atmosphere, intermittently supplying at least one of a first processing gas composed of a hydrogen fluoride gas and an ammonia gas and a second processing gas composed of a compound of nitrogen, hydrogen and fluorine, to the substrate to be processed multiple times.

Abstract: There is provided a method of forming a sealing film to seal a device formed on a substrate, including: supplying a mixture gas including a silicon-containing gas and a halogen element-containing gas or a mixture gas including a silicon-containing gas and a gas containing a functional group having an electronegative property stronger than that of nitrogen, as a first mixture gas, into a processing container; generating plasma of the first mixture gas within the processing container; and forming a first sealing film to cover the device using the first mixture gas activated by the plasma.

Abstract: There is a method of selectively etching a silicon oxide film among a silicon nitride film and the silicon oxide film formed on a surface of a substrate to be processed, the method including: under a vacuum atmosphere, intermittently supplying at least one of a first processing gas composed of a hydrogen fluoride gas and an ammonia gas and a second processing gas composed of a compound of nitrogen, hydrogen and fluorine, to the substrate to be processed multiple times.