Abstract: A torsion coil spring biasing and rotating a drive gear of a valve device in one direction and defining a rotation position of a valve body when an electric motor is not operating is included, one end of the torsion coil spring is locked at any one of two locking portions provided at the drive gear, the other end is locked at a casing rotatably supporting the valve shaft, the drive gear is a plate-shaped members including two locking portions and formed linearly symmetrically, the locking portions are formed into hook shapes including extending portions extending in a direction away from an inner surface of the drive gear and distal end portions projecting along the inner surface from distal ends of the extending portions. The drive gear includes openings at positions at which the openings overlap the distal end portions in a view in a direction of the axial line.

Abstract: A server includes: a generating target location setting unit setting, as a target location for generating a virtual marking line, a region where a lane center line exists and part of a marking line does not exist; an origin point setting unit setting an origin point on the lane center line; a start point setting unit setting a start point on a marking line parallel to the lane center line, with the start point positioned forward or rearward relative to the origin point; an end point setting unit setting an end point on the marking line, with the end point being set in the other one of the forward position and rearward position relative to the origin point; a virtual marking line generating unit generating a virtual marking line by connecting the start end points; and a marking line connecting unit connecting the marking line and the virtual marking line.

Abstract: Disclosed is a biaxially stretched film containing two or more kinds of polyesters, in which at least one of the polyesters is a polybutylene naphthalate resin (A), and a dielectric tangent at 28 GHz is 0.0040 or less. There can be provided a biaxially stretched film having excellent low-dielectric properties.

Abstract: Provided is a semiconductor device and a method of manufacturing a semiconductor device in which deterioration of energy loss is suppressed. The semiconductor device includes: a drift layer of a first conductivity type provided between a first main surface and a second main surface of a semiconductor substrate; and a field stop layer of the first conductivity type having an impurity concentration higher than that of the drift layer and provided between the drift layer and the second main surface. A net carrier concentration profile at room temperature of the field stop layer have at least one peak from the second main surface toward the first main surface. A hydrogen atom concentration profile of the field stop layer have at least two peaks from the second main surface toward the first main surface. The hydrogen atom concentration profile has more peaks than the net carrier concentration profile.