Abstract: According to the invention, in a method of drawing patterns by use of an energy beam, the amount of drawing data is reduced, the irregularity of an array of patterns is prevented, and the patterns are drawn with great accuracy. In a method of drawing a pattern including a plurality of patterns, the amount of drawing data is reduced and the pattern can be drawn enlarged or reduced at a given scale in X-axis direction and/or Y-axis direction. Furthermore, if the pattern includes patterns symmetrical with respect to a line, the amount of drawing data is reduced by use of the symmetry of the drawing data. In addition, in case where patterns are arrayed on a first curved line, the pattern can be drawn as being arrayed on a straight line by performing the shift of a table or deflection of the energy beam parallel to the curved on which patterns are arrayed or approximating it at a second curved line using partial approximate straight lines.

Abstract: An epitaxial growing apparatus comprises a base plate, a quartz bell jar mounted on the base plate, and a reaction chamber defined by the base plate and the quartz bell jar, in which an epitaxial thin film layer of a semiconductor substance is formed on the substrate mounted on a support member. A metal bell jar is disposed outside the quartz bell jar so as to surround the quartz bell jar and a plurality of engaging members are operatively connected to the metal bell jar for detachably engaging the metal bell jar with the quartz bell jar.

Abstract: A barrel-type epitaxial vapor phase growing apparatus in which a susceptor for mounting wafers to be treated on a plurality of plates is rotatably hung by a rod inside a bell jar. Purge gases are supplied to the casing housing the drive mechanism and a baffle directs the gases along the rod and into the susceptor. The purge gases carry dust which is thus kept away from the wafers on the outside of the susceptor as it passes through the susceptor to an exhaust at the lower end of the reaction chamber. The flowing purge gases also cool the susceptor more quickly after treatment.