Abstract: The application pertains to pharmaceutical combinations of orally administered paclitaxel and a P-gp inhibitor. The pharmaceutical combinations are suitable for the treatment of cancer in a subject and for reducing or preventing toxicity, hypersensitivity-type infusion reactions, and other negative outcomes resulting from or associated with intravenously administered paclitaxel (e.g., Taxol® or paclitaxel formulated with Cremophor®) therapy in a subject suffering from cancer.

Abstract: The application pertains to pharmaceutical combinations of orally administered paclitaxel and a P-gp inhibitor. The pharmaceutical combinations are suitable for the treatment of cancer in a subject and for reducing or preventing toxicity, hypersensitivity-type infusion reactions, and other negative outcomes resulting from or associated with intravenously administered paclitaxel (e.g., Taxol® or paclitaxel formulated with Cremophor®) therapy in a subject suffering from cancer.

Abstract: A method of forming a low resistance contact structure in a semiconductor device includes forming a doped semiconductor region in a semiconductor substrate; forming a deep level impurity region at an upper portion of the doped semiconductor region; activating dopants in both the doped semiconductor region and the deep level impurity region by annealing; and forming a metal contact over the deep level impurity region so as to create a metal-semiconductor interface therebetween.

Abstract: A method of forming a low resistance contact structure in a semiconductor device includes forming a doped semiconductor region in a semiconductor substrate; forming a deep level impurity region at an upper portion of the doped semiconductor region; activating dopants in both the doped semiconductor region and the deep level impurity region by annealing; and forming a metal contact over the deep level impurity region so as to create a metal-semiconductor interface therebetween.

Abstract: Human hPRP4 genes are identified as modulators of the p53 pathway, and thus are therapeutic targets for disorders associated with defective p53 function. Methods for identifying modulators of p53, comprising screening for agents that modulate the activity of hPRP4 are provided.

Abstract: A CMOS device includes a silicon substrate and an electrical insulator formed over the silicon substrate. The device also includes an access pFET formed over the electrical insulator and a first gate stack and a storage pFET formed over the electrical insulator, the storage pFET including a second source region that is co-formed with the first drain region, a second channel region, and a second drain region. The device also includes a second gate stack including a second dielectric layer formed above the second channel region and a floating gate electrode formed above the second gate dielectric layer.

Abstract: An SOI FET device with improved floating body is proposed. Control of the body potential is accomplished by having a body doping concentration next to the source electrode higher than the body doping concentration next to the drain electrode. The high source-side dopant concentration leads to elevated forward leakage current between the source electrode and the body, which leakage current effectively locks the body potential to the source electrode potential. Furthermore, having the source-to-body junction capacitance larger than the drain-to-body junction capacitance has additional advantages in device operation. The device has no structure fabricated for the purpose of electrically connecting the body potential to other elements of the device.

Abstract: An SOI FET device with improved floating body is proposed. Control of the body potential is accomplished by having a body doping concentration next to the source electrode higher than the body doping concentration next to the drain electrode. The high source-side dopant concentration leads to elevated forward leakage current between the source electrode and the body, which leakage current effectively locks the body potential to the source electrode potential. Furthermore, having the source-to-body junction capacitance larger than the drain-to-body junction capacitance has additional advantages in device operation. The device has no structure fabricated for the purpose of electrically connecting the body potential to other elements of the device.

Abstract: An SOI FET device with improved floating body is proposed. Control of the body potential is accomplished by having a body doping concentration next to the source electrode higher than the body doping concentration next to the drain electrode. The high source-side dopant concentration leads to elevated forward leakage current between the source electrode and the body, which leakage current effectively locks the body potential to the source electrode potential. Furthermore, having the source-to-body junction capacitance larger than the drain-to-body junction capacitance has additional advantages in device operation. The device has no structure fabricated for the purpose of electrically connecting the body potential to other elements of the device.

Abstract: An SOI FET device with improved floating body is proposed. Control of the body potential is accomplished by having a body doping concentration next to the source electrode higher than the body doping concentration next to the drain electrode. The high source-side dopant concentration leads to elevated forward leakage current between the source electrode and the body, which leakage current effectively locks the body potential to the source electrode potential. Furthermore, having the source-to-body junction capacitance larger than the drain-to-body junction capacitance has additional advantages in device operation. The device has no structure fabricated for the purpose of electrically connecting the body potential to other elements of the device.

Abstract: Human SPHK genes are identified as modulators of the p53 pathway, and thus are therapeutic targets for disorders associated with defective p53 function. Methods for identifying modulators of p53, comprising screening for agents that modulate the activity of SPHK are provided.

Abstract: A low programming power, high speed EEPROM device is disclosed which is adapted for large scale integration. The device comprises a body, a source, a drain, and it has means for injecting a programming current into the body. The hot carriers from the body enter the floating gate with much higher efficiency than channel current carriers are capable of doing. The drain current of this device is controlled by the body bias. The device is built on an insulator, with a bottom common plate, and a top side body. These features make the device ideal for SOI and thin film technologies.

Abstract: Human hPRP4 genes are identified as modulators of the p53 pathway, and thus are therapeutic targets for disorders associated with defective p53 function. Methods for identifying modulators of p53, comprising screening for agents that modulate the activity of hPRP4 are provided.

Abstract: A bipolar transistor structure and process technology is described incorporating a emitter, a base, and a collector, with most of the intrinsic base adjacent the collector having a graded energy bandgap and a layer of the intrinsic base adjacent the emitter having a substantially constant energy bandgap. The invention has a smaller base transit time than a conventional graded-base-bandgap bipolar transistor.

Abstract: Human SPHK genes are identified as modulators of the p53 pathway, and thus are therapeutic targets for disorders associated with defective p53 function. Methods for identifying modulators of p53, comprising screening for agents that modulate the activity of SPHK are provided.

Abstract: Human RAB genes are identified as modulators of the p53 pathway, and thus are therapeutic targets for disorders associated with defective p53 function. Methods for identifying modulators of p53, comprising screening for agents that modulate the activity of RAB are provided.

Abstract: A bipolar transistor structure is described incorporating an emitter, base, and collector having a fully depleted region on an insulator of a Silicon-On-Insulator (SOI) substrate without the need for a highly doped subcollector to permit the fabrication of vertical bipolar transistors on semiconductor material having a thickness of 300 nm or less and to permit the fabrication of SOI BiCMOS. The invention overcomes the problem of requiring a thick semiconductor layer in SOI to fabricate vertical bipolar transistors with low collector resistance.

Abstract: A low programming power, high speed EEPROM device is disclosed which is adapted for large scale integration. The device comprises a body, a source, a drain, and it has means for injecting a programming current into the body. The hot carriers from the body enter the floating gate with much higher efficiency than channel current carriers are capable of doing. The drain current of this device is controlled by the body bias. The device is built on an insulator, with a bottom common plate, and a top side body. These features make the device ideal for SOI and thin film technologies.

Abstract: A bipolar transistor structure is described incorporating an emitter, base, and collector having a fully depleted region on an insulator of a Silicon-On-Insulator (SOI) substrate without the need for a highly doped subcollector to permit the fabrication of vertical bipolar transistors on semiconductor material having a thickness of 300 nm or less and to permit the fabrication of SOI BiCMOS. The invention overcomes the problem of requiring a thick semiconductor layer in SOI to fabricate vertical bipolar transistors with low collector resistance.

Abstract: A novel architecture for displaying images with multiple display devices uses only a single video display controller and single frame buffer regardless of how many display devices are included. The architecture can use a Time Division Multiplex Image Display (TDMID) algorithm for controlling the timing and data flow of the video display controller. The TDMID algorithm provides a simple way to send a divided image to different display devices by sharing line buffers, and thus eliminates the need for additional components as more display devices are added to a system. The novel architecture reduces overall system cost without sacrificing performance.