Abstract: The vertical Hall element includes: a second conductivity type semiconductor layer formed on a first conductivity type semiconductor substrate; a plurality of high-concentration second conductivity type electrodes formed in a straight line on a surface of the semiconductor layer having substantially the same shape, and spaced at a first interval; a plurality of electrode isolation layers each formed between two electrodes out of the plurality of electrodes to isolate the plurality of electrodes from one another having substantially the same shape, and spaced at a second interval; and a first added layer and a second added layer each formed along the straight line outside of the outermost electrodes, and each having substantially the same structure as that of each electrode isolation layer.

Abstract: The vertical Hall element includes: a second conductivity type semiconductor layer; electrodes aligned along a straight line in a surface of the semiconductor layer, and each include a second conductivity type impurity region that is higher in concentration than semiconductor layer; and first conductivity type electrode isolation diffusion layers isolating the electrodes from one another, each of the electrode isolation diffusion layers being provided between each pair of the electrodes in the surface of the semiconductor layer, the electrodes including an electrode that functions as a drive current supply electrode and an electrode that functions as a Hall voltage output electrode, the drive current supply electrode and the Hall voltage output electrode being arranged alternately, the Hall voltage output electrode having a first depth, the drive current supply electrode having a second depth that is larger than the first depth and a depth of the electrode isolation diffusion layers.

Abstract: Provided is a semiconductor device including a Hall element, in which a depletion layer is prevented from spreading to a magnetism sensing portion more reliably, and thus variations in characteristic are reduced. The semiconductor device, including: a semiconductor substrate of a first conductivity type; and a Hall element formed on the semiconductor substrate, the Hall element having: a magnetism sensing portion of a second conductivity type formed on the semiconductor substrate so as to be separated from the semiconductor substrate; and a semiconductor layer of the second conductivity type formed so as to surround side surfaces and a bottom surface of the magnetism sensing portion on the semiconductor substrate and has a lower concentration than a concentration of the magnetism sensing portion and a uniform concentration distribution.

Abstract: The vertical Hall element includes: a second conductivity type semiconductor layer; electrodes aligned along a straight line in a surface of the semiconductor layer, and each include a second conductivity type impurity region that is higher in concentration than semiconductor layer; and first conductivity type electrode isolation diffusion layers isolating the electrodes from one another, each of the electrode isolation diffusion layers being provided between each pair of the electrodes in the surface of the semiconductor layer, the electrodes including an electrode that functions as a drive current supply electrode and an electrode that functions as a Hall voltage output electrode, the drive current supply electrode and the Hall voltage output electrode being arranged alternately, the Hall voltage output electrode having a first depth, the drive current supply electrode having a second depth that is larger than the first depth and a depth of the electrode isolation diffusion layers.

Abstract: The vertical Hall element includes: a semiconductor layer of a second conductivity type formed on a semiconductor substrate of a first conductivity type; a first electrode set formed in a surface of the semiconductor layer and including a first drive current supply electrode, a Hall voltage output electrode, and a second drive current supply electrode aligned along a straight line extending in a first direction in this order; and second to fifth electrode sets each having the same configuration as the configuration of the first electrode set and aligned with the first electrode set along a straight line extending in a second direction perpendicular to the first direction. The Hall voltage output electrode has a first depth, the first and second drive current supply electrodes have a second depth that is larger than the first depth.

Abstract: The magnetic sensor includes a semiconductor substrate having Hall elements on a front surface of the semiconductor substrate, a conductive layer formed on a back surface of the semiconductor substrate, and a magnetic flux converging plate formed on the conductive layer. The magnetic flux converging plate is formed on the back surface of the semiconductor substrate through formation of the base conductive layer on the back surface of the semiconductor substrate, formation of a resist on the base conductive layer having an opening for forming the magnetic flux converging plate, formation of the magnetic flux converging plate in the opening of the resist by electroplating, removal of the resist, and removal of a part of the base conductive layer by etching with the magnetic flux converging plate as a mask.

Abstract: Provided is a semiconductor device including a vertical Hall element with improved sensitivity. The vertical Hall element includes: a semiconductor layer of a second conductivity type formed on the semiconductor substrate; a plurality of electrodes aligned along a straight line on a surface of the semiconductor layer and being impurity regions of the second conductivity type being higher in concentration than the semiconductor layer; a plurality of electrode isolation diffusion layers of the first conductivity type respectively arranged between adjacent electrodes of the plurality of electrodes on the surface of the semiconductor layer to isolate the plurality of electrodes from one another; and embedded layers being an impurity region of the second conductivity type which is higher in concentration than the semiconductor layer and being respectively provided substantially right below one of the plurality of electrode isolation diffusion layers between the semiconductor substrate and the semiconductor layer.

Abstract: Provided is a semiconductor device including a vertical Hall element with improved sensitivity. The vertical Hall element includes: a semiconductor layer of a second conductivity type formed on the semiconductor substrate; a plurality of electrodes aligned along a straight line on a surface of the semiconductor layer and being impurity regions of the second conductivity type being higher in concentration than the semiconductor layer; a plurality of electrode isolation diffusion layers of the first conductivity type respectively arranged between adjacent electrodes of the plurality of electrodes on the surface of the semiconductor layer to isolate the plurality of electrodes from one another; and embedded layers being an impurity region of the second conductivity type which is higher in concentration than the semiconductor layer and being respectively provided substantially right below one of the plurality of electrode isolation diffusion layers between the semiconductor substrate and the semiconductor layer.

Abstract: The vertical Hall element includes: a second conductivity type semiconductor layer formed on a first conductivity type semiconductor substrate; a plurality of high-concentration second conductivity type electrodes formed in a straight line on a surface of the semiconductor layer having substantially the same shape, and spaced at a first interval; a plurality of electrode isolation layers each formed between two electrodes out of the plurality of electrodes to isolate the plurality of electrodes from one another having substantially the same shape, and spaced at a second interval; and a first added layer and a second added layer each formed along the straight line outside of the outermost electrodes, and each having substantially the same structure as that of each electrode isolation layer.

Abstract: A vertical Hall element having an improved sensitivity and reduced offset voltage includes: a second conductivity type semiconductor layer formed on a semiconductor substrate and having an impurity concentration that is distributed uniformly; a second conductivity type impurity diffusion layer formed on the semiconductor layer and having a concentration higher than in the semiconductor layer; a plurality of electrodes formed in a straight line on a surface of the impurity diffusion layer, and each formed from a second conductivity type impurity region that is higher in concentration than the impurity diffusion layer; and a plurality of first conductivity type electrode isolation diffusion layers each formed between two electrodes out of the plurality of electrodes on the surface of the impurity diffusion layer, to isolate the plurality of electrodes from one another.

Abstract: In a Hall sensor in which a Hall element and elements serving as heat sources out of components of a circuit for driving the Hall element are arranged close to each other on a silicon substrate, two directions of control currents by spinning current for the Hall element are selected in a vector manner based on signals from temperature sensors arranged close to a periphery of the Hall element, thereby enabling the elimination of a magnetic offset caused by heat generation of the heat sources.

Abstract: A Hall element is integrated on a single substrate and is capable of cancelling offset voltage with a spinning switch configured to switch spinning current and capable of simultaneously detecting a horizontal direction magnetic field and a vertical direction magnetic field. The Hall element has a four-fold rotational axis and includes a P-type semiconductor substrate layer formed of P-type silicon, a vertical magnetic field detection N-type doped region formed on the P-type semiconductor substrate layer, and eight horizontal magnetic field detection N-type doped regions formed so as to surround the vertical magnetic field detection N-type doped region.

Abstract: Provided are a magnetic sensor and a method of manufacturing the same. In the magnetic sensor and the method of manufacturing the same, a magnetic converging plate holder with a recessed pattern having the same shape and size as those of a magnetic converging plate is formed in a die pad of a package on which a semiconductor substrate having Hall elements, a circuit, and the like is to be arranged, the magnetic converging plate manufactured through processes different from those of the semiconductor substrate on which the Hall elements and the circuit are formed is inserted into the magnetic converging plate holder, and the semiconductor substrate having the Hall elements, the circuit, and the like is arranged on the resultant so that a back surface thereof faces the die pad and the magnetic converging plate.

Abstract: The magnetic sensor includes a semiconductor substrate having Hall elements on a front surface of the semiconductor substrate, a conductive layer formed on a back surface of the semiconductor substrate, and a magnetic flux converging plate formed on the conductive layer. The magnetic flux converging plate is formed on the back surface of the semiconductor substrate through formation of the base conductive layer on the back surface of the semiconductor substrate, formation of a resist on the base conductive layer having an opening for forming the magnetic flux converging plate, formation of the magnetic flux converging plate in the opening of the resist by electroplating, removal of the resist, and removal of a part of the base conductive layer by etching with the magnetic flux converging plate as a mask.

Abstract: The magnetic sensor includes a semiconductor substrate having Hall elements on a front surface of the semiconductor substrate, an adhesive layer formed on a back surface of the semiconductor substrate, and a magnetic flux converging plate formed on the adhesive layer. The magnetic flux converging plate is formed on the back surface of the semiconductor substrate through formation of the magnetic flux converging plate by electroplating on a base conductive layer formed on a plating substrate prepared separately from the semiconductor substrate, application of an adhesive for forming the adhesive layer onto a surface of the magnetic flux converging plate so that the magnetic flux converging plate adheres to the back surface of the semiconductor substrate, and peeling off of the plating substrate afterward from the base conductive layer formed on the magnetic flux converging plate.

Abstract: A semiconductor device and a method of manufacturing the semiconductor device are provided. The semiconductor device includes a semiconductor substrate having a plurality of Hall elements formed therein, and a magnetic body formed on the semiconductor substrate and having a magnetic flux converging function. The contour in vertical-cross section of the magnetic body on the semiconductor substrate has an outer circumferential portion. At least a part of the outer circumferential portion has a curve-shaped portion and a portion substantially parallel to the semiconductor substrate. The magnetic body has at least a part of a structure made of non-magnetic substance embedded therein.

Abstract: A semiconductor device includes a semiconductor substrate having a plurality of Hall elements formed therein, and a magnetic body formed on the semiconductor substrate and having a magnetic flux converging function. The contour in vertical cross-section of the magnetic body on the semiconductor substrate has an outer circumferential portion. At least a part of the outer circumferential portion has a portion having an approximate quadrant shape, and a portion contiguous to the approximate quadrant portion and substantially parallel to the semiconductor substrate.

Abstract: A magnetic sensor has a pair of Hall elements formed in spaced-apart relationship on a front surface of a semiconductor substrate. A die pad is bonded to a back surface of the semiconductor substrate and overlaps the Hall elements. The die pad has formed therein a magnetic converging plate holder having a recessed portion, and a magnetic converging plate having the same shape and size as the recessed portion is fitted in the recessed portion of the magnetic converging plate holder.

Abstract: A Hall sensor includes a Hall element and a heat source element in a circuit configured to drive the semiconductor Hall element, and capable of eliminating an offset voltage without increasing a chip size. In the Hall sensor, a Hall element control current flowing between one pair of terminals out of two pairs and a Hall element control current flowing between another pair of terminals cross each other as vectors, the Hall element has a shape that is line-symmetrical to the straight line along a vector sum of the Hall element control current and the Hall element control current, and the heat source element is arranged so that the center of the heat source is positioned on the straight line along the vector sum of the Hall element control current and the Hall element control current.

Abstract: Provided is a highly sensitive vertical Hall element without increasing a chip area. In the vertical Hall element, trenches each filled with an insulating film are formed between a first current supply end and voltage output ends, respectively, which enables the restriction of current flow into the voltage output ends to increase the ratio of a current component perpendicular to a substrate surface, resulting in enhanced sensitivity.