Patents by Inventor TAKAAKI KODAIRA
TAKAAKI KODAIRA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11876055Abstract: A semiconductor device, including: a semiconductor substrate formed of silicon carbide, components being formed at one surface of the semiconductor substrate; a periphery portion disposed at a pre-specified region of a periphery of the semiconductor substrate, the components not being formed at the periphery portion; and a plurality of trenches or portions of trenches formed at the periphery portion, an interior of each of the trenches being filled with a material with a different coefficient of thermal expansion from the silicon carbide.Type: GrantFiled: October 21, 2021Date of Patent: January 16, 2024Assignee: LAPIS SEMICONDUCTOR CO., LTD.Inventors: Kenichi Furuta, Masao Tsujimoto, Nobuhiro Terada, Masahiro Haraguchi, Tsuyoshi Inoue, Yuuichi Kaneko, Hiroki Kuroki, Takaaki Kodaira
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Publication number: 20220130772Abstract: A semiconductor device, including: a semiconductor substrate formed of silicon carbide, components being formed at one surface of the semiconductor substrate; a periphery portion disposed at a pre-specified region of a periphery of the semiconductor substrate, the components not being formed at the periphery portion; and a plurality of trenches or portions of trenches formed at the periphery portion, an interior of each of the trenches being filled with a material with a different coefficient of thermal expansion from the silicon carbide.Type: ApplicationFiled: October 21, 2021Publication date: April 28, 2022Applicant: LAPIS Semiconductor Co., Ltd.Inventors: Kenichi FURUTA, Masao TSUJIMOTO, Nobuhiro TERADA, Masahiro HARAGUCHI, Tsuyoshi INOUE, Yuuichi KANEKO, Hiroki KUROKI, Takaaki KODAIRA
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Patent number: 9627477Abstract: A semiconductor device includes a semiconductor substrate, an element isolating trench structure that includes an element isolating trench formed in one main surface of the semiconductor substrate, an insulating material that is formed within the element isolating trench, element formation regions that are surrounded by the element isolating trench, and semiconductor elements that are respectively formed in the element formation regions. The element isolating trench includes first element isolating trenches extending in a first direction, second element isolating trenches extending in a second direction that are at a right angle to the first direction, and third element isolating trenches extending in a third direction inclined at an angle ? (0°<?<90°) from the first direction.Type: GrantFiled: May 17, 2016Date of Patent: April 18, 2017Assignee: LAPIS SEMICONDUCTOR CO., LTD.Inventors: Takao Kaji, Katsuhito Sasaki, Takaaki Kodaira, Yuuki Doi, Minako Oritsu
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Publication number: 20160260800Abstract: A semiconductor device includes a semiconductor substrate, an element isolating trench structure that includes an element isolating trench formed in one main surface of the semiconductor substrate, an insulating material that is formed within the element isolating trench, element formation regions that are surrounded by the element isolating trench, and semiconductor elements that are respectively formed in the element formation regions. The element isolating trench includes first element isolating trenches extending in a first direction, second element isolating trenches extending in a second direction that are at a right angle to the first direction, and third element isolating trenches extending in a third direction inclined at an angle ? (0°<?<90°) from the first direction.Type: ApplicationFiled: May 17, 2016Publication date: September 8, 2016Inventors: TAKAO KAJI, KATSUHITO SASAKI, TAKAAKI KODAIRA, YUUKI DOI, MINAKO ORITSU
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Patent number: 9368571Abstract: A semiconductor device includes a semiconductor substrate, an element isolating trench structure that includes an element isolating trench formed in one main surface of the semiconductor substrate, an insulating material that is formed within the element isolating trench, element formation regions that are surrounded by the element isolating trench, and semiconductor elements that are respectively formed in the element formation regions. The element isolating trench includes first element isolating trenches extending in a first direction, second element isolating trenches extending in a second direction that are at a right angle to the first direction, and third element isolating trenches extending in a third direction inclined at an angle ? (0°<?<90°) from the first direction.Type: GrantFiled: April 10, 2015Date of Patent: June 14, 2016Assignee: LAPIS SEMICONDUCTOR CO., LTD.Inventors: Takao Kaji, Katsuhito Sasaki, Takaaki Kodaira, Yuuki Doi, Minako Oritsu
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Publication number: 20150214298Abstract: A semiconductor device includes a semiconductor substrate, an element isolating trench structure that includes an element isolating trench formed in one main surface of the semiconductor substrate, an insulating material that is formed within the element isolating trench, element formation regions that are surrounded by the element isolating trench, and semiconductor elements that are respectively formed in the element formation regions. The element isolating trench includes first element isolating trenches extending in a first direction, second element isolating trenches extending in a second direction that are at a right angle to the first direction, and third element isolating trenches extending in a third direction inclined at an angle ? (0°<?<90°) from the first direction.Type: ApplicationFiled: April 10, 2015Publication date: July 30, 2015Inventors: TAKAO KAJI, KATSUHITO SASAKI, TAKAAKI KODAIRA, YUUKI DOI, MINAKO ORITSU
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Patent number: 9029980Abstract: A semiconductor device includes a semiconductor substrate, an element isolating trench structure that includes an element isolating trench formed in one main surface of the semiconductor substrate, an insulating material that is formed within the element isolating trench, element formation regions that are surrounded by the element isolating trench, and semiconductor elements that are respectively formed in the element formation regions. The element isolating trench includes first element isolating trenches extending in a first direction, second element isolating trenches extending in a second direction that are at a right angle to the first direction, and third element isolating trenches extending in a third direction inclined at an angle ? (0°<?<90°) from the first direction.Type: GrantFiled: June 5, 2013Date of Patent: May 12, 2015Assignee: Lapis Semiconductor Co., Ltd.Inventors: Takao Kaji, Katsuhito Sasaki, Takaaki Kodaira, Yuuki Doi, Minako Oritsu
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Patent number: 8742537Abstract: Disclosed is a semiconductor device including: a semiconductor substrate; first and second element isolating trenches that are formed in one main surface of the semiconductor substrate separately from each other; a first insulating material that is formed within the first element isolating trench; a plurality of first element formation regions that are surrounded by the first element isolating trench; first semiconductor elements that are respectively formed in the first element formation regions; a second insulating material that is formed within the second element isolating trench; a second element formation region that is surrounded by the second element isolating trench; a second semiconductor element that is formed in the second element formation region; and a stress relaxation structure that is formed between the first element isolating trench and the second element isolating trench.Type: GrantFiled: June 5, 2013Date of Patent: June 3, 2014Assignee: Lapis Semiconductor Co., Ltd.Inventors: Takao Kaji, Katsuhito Sasaki, Takaaki Kodaira, Yuuki Doi, Minako Oritsu
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Publication number: 20130334655Abstract: Disclosed is a semiconductor device including: a semiconductor substrate; first and second element isolating trenches that are formed in one main surface of the semiconductor substrate separately from each other; a first insulating material that is formed within the first element isolating trench; a plurality of first element formation regions that are surrounded by the first element isolating trench; first semiconductor elements that are respectively formed in the first element formation regions; a second insulating material that is formed within the second element isolating trench; a second element formation region that is surrounded by the second element isolating trench; a second semiconductor element that is formed in the second element formation region; and a stress relaxation structure that is formed between the first element isolating trench and the second element isolating trench.Type: ApplicationFiled: June 5, 2013Publication date: December 19, 2013Inventors: TAKAO KAJI, KATSUHITO SASAKI, TAKAAKI KODAIRA, YUUKI DOI, MINAKO ORITSU
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Publication number: 20130334654Abstract: Disclosed is a semiconductor device including: a semiconductor substrate, an element isolating trench structure that includes an element isolating trench formed in one main surface of the semiconductor substrate, an insulating material that is formed within the element isolating trench, element formation regions that are surrounded by the element isolating trench, and semiconductor elements that are respectively formed in the element formation regions. The element isolating trench includes first element isolating trenches extending in a first direction, second element isolating trenches extending in a second direction that are at a right angle to the first direction, and third element isolating trenches extending in a third direction inclined at an angle ? (0°<?<90°) from the first direction.Type: ApplicationFiled: June 5, 2013Publication date: December 19, 2013Inventors: TAKAO KAJI, KATSUHITO SASAKI, TAKAAKI KODAIRA, YUUKI DOI, MINAKO ORITSU