Abstract: A substrate polishing method, a semiconductor device and a fabrication method for a semiconductor device are disclosed by which high planarization polishing can be achieved. In the substrate polishing method, two or more different slurries formed from ceria abrasive grains having different BET values from each other are used to carry out two or more stages of chemical-mechanical polishing processing of a polishing object oxide film on a substrate to flatten the polishing object film.

Abstract: A substrate polishing method, a semiconductor device and a fabrication method for a semiconductor device are disclosed by which high planarization polishing can be achieved. In the substrate polishing method, two or more different slurries formed from ceria abrasive grains having different BET values from each other are used to carry out two or more stages of chemical-mechanical polishing processing of a polishing object oxide film on a substrate to flatten the polishing object film.

Abstract: A polishing wheel is pushed up and down in the Z-axis direction owing to a wafer surface shape. And the polishing amount depends on the height of protrusions on a wafer surface. Where a spindle is a rigid body in the Z-axis direction, the pressing force of the polishing wheel caused by vertical movement of a tool varies depending on the position on a wafer and hence polishing is not performed uniformly To solve this problem, the spindle is provided with a Z-axis parallel leaf spring mechanism. Push-up and push-down actions of the polishing wheel are absorbed by displacement of the parallel leaf spring mechanism. This enables uniform polishing. Since the tool can be hardened, the flatness can also be improved.

Abstract: A polishing wheel is pushed up and down in the Z-axis direction owing to a wafer surface shape. And the polishing amount depends on the height of protrusions on a wafer surface. Where a spindle is a rigid body in the Z-axis direction, the pressing force of the polishing wheel caused by vertical movement of a tool varies depending on the position on a wafer and hence polishing is not performed uniformly To solve this problem, the spindle is provided with a Z-axis parallel leaf spring mechanism. Push-up and push-down actions of the polishing wheel are absorbed by displacement of the parallel leaf spring mechanism. This enables uniform polishing. Since the tool can be hardened, the flatness can also be improved.

Abstract: A polishing wheel is pushed up and down in the Z-axis direction owing to a wafer surface shape. And the polishing amount depends on the height of protrusions on a wafer surface. Where a spindle is a rigid body in the Z-axis direction, the pressing force of the polishing wheel caused by vertical movement of a tool varies depending on the position on a wafer and hence polishing is not performed uniformly. To solve this problem, the spindle is provided with a Z-axis parallel leaf spring mechanism. Push-up and push-down actions of the polishing wheel are absorbed by displacement of the parallel leaf spring mechanism. This enables uniform polishing. Since the tool can be hardened, the flatness can also be improved.