Abstract: Copper(II) acetate, zinc(II) acetate, and tin(IV) acetate are weighed so that the total amount of metal ions is 2.0×10?4 mol and the molar ratio of ions is Cu:Zn:Sn=2:1:1, and 2.0 cm3 of oleylamine is added to prepare a mixed solution. Apart from this, 1.0 cm3 of oleylamine is added to 2.0×10?4 mol of sulfur powder to prepare a mixed solution. These mixed solutions are separately heated at 60° C. and mixed at room temperature. The pressure in a test tube is reduced, followed by nitrogen filling. The test tube is heated at 240° C. for 30 minutes and then allowed to stand until room temperature. The resultant product is separated into a supernatant and precipitates by centrifugal separation. The separated supernatant is filtered, methanol is added to produce precipitates. The precipitates are dissolved by adding chloroform to prepare a semiconductor nanoparticle solution.

Abstract: Copper(II) acetate, zinc(II) acetate, and tin(IV) acetate are weighed so that the total amount of metal ions is 2.0×10?4 mol and the molar ratio of ions is Cu:Zn:Sn=2:1:1, and 2.0 cm3 of oleylamine is added to prepare a mixed solution. Apart from this, 1.0 cm3 of oleylamine is added to 2.0×10?4 mol of sulfur powder to prepare a mixed solution. These mixed solutions are separately heated at 60° C. and mixed at room temperature. The pressure in a test tube is reduced, followed by nitrogen filling. The test tube is heated at 240° C. for 30 minutes and then allowed to stand until room temperature. The resultant product is separated into a supernatant and precipitates by centrifugal separation. The separated supernatant is filtered, methanol is added to produce precipitates. The precipitates are dissolved by adding chloroform to prepare a semiconductor nanoparticle solution.

Abstract: A waveguide film carrier includes an insulating flexible substrate, RF, bias supply and ground electrodes formed on the insulating flexible substrate, and conductive leads connected to the electrodes. An opening portion corresponding to a bare-chip semiconductor element to be mounted is formed in a portion of the insulating flexible substrate. The leads are formed to project in the opening portion at positions corresponding to electrode pads of the bare-chip semiconductor element to be mounted. The leads are formed on an outer peripheral portion of the insulating substrate to project at positions corresponding to the internal connection terminals of the package. The waveguide film carrier further includes at least one waveguide. The waveguide is constituted by the RF electrodes for contributing to RF signal propagation, the ground electrodes and the insulating flexible substrate.

Abstract: A stack layer structure is formed wherein solderable metal layers are provided at least at two ends thereof, and at least a metal layer for preventing the diffusion of solder is inserted between the two metal layers. In an interboard connection terminal and a method of manufacturing the same, a pair of solder bumps are fixed to be in contact with the two surfaces of the resultant stack layer structure.

Abstract: A current supply circuit for a telephone exchange is disclosed in which a current-supplying current amplifier series-connected between a power supply and a load amplifys an output current of an input current supply circuit, and a driving current amplifier for driving the current-supplying current amplifier is controlled by an output of an output voltage detector parallel-connected with the load in a negative-feedback fashion to set the differential mode output impedance of the current supply circuit at a large or small value in accordance with frequency and to set the common mode output impedance at a small value; and in which a part of the output voltage detector for connecting the load to the driving current amplifier includes a diode for preventing a direct current from flowing in a opposite direction to that of a direct current from the power supply in order to suppress, independently of the state of the load, a current which flows from the load side into the driving current amplifier, whereby an increase